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The role of inorganic materials in dry-processed resist technologyTAYLOR, G. N; WOLF, T. M; STILLWAGON, L. E et al.Solid state technology. 1984, Vol 27, Num 2, pp 145-155, issn 0038-111XArticle

Progress toward developing high performance 193nm single layer positive resist based on functionalized poly(norbornenes)RAO VARANASI, P; JORDHAMO, G; ITO, H et al.SPIE proceedings series. 2000, pp 1157-1162, isbn 0-8194-3617-8Conference Paper

Kinetic study of NH₃-catalyzed image reversal in positive photoresistWOLK, G. L; ZIGER, D. H.Industrial & engineering chemistry research. 1991, Vol 30, Num 7, pp 1461-1468, issn 0888-5885, 8 p.Article

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Toward controlled resist line edge roughness : Material origin of line edge roughness in chemically amplified positive-tone resistsQINGHUANG LIN; SOORIYAKUMARAN, Ratnam; HUANG, Wu-Song et al.SPIE proceedings series. 2000, pp 230-239, isbn 0-8194-3617-8Conference Paper

On-line state and parameter identification of positive photoresist developmentCARROLL, T. A; RAMIREZ, W. F.AIChE journal. 1990, Vol 36, Num 7, pp 1046-1053, issn 0001-1541Article

Design of a positive resist for projection lithography in the mid-UVWILLSON, G; MILLER, R; MCKEAN, D et al.Polymer engineering and science. 1983, Vol 23, Num 18, pp 1004-1011, issn 0032-3888Article

Effect of acid labile ether protecting groups on the oxide-etch resistance and lithographic performance of 248nm resistsVARANASI, P. Rao; CORNETT, K; LAWSON, M. C et al.SPIE proceedings series. 2000, pp 322-327, isbn 0-8194-3617-8Conference Paper

Contrast enhancing additives for positive photoresistPAMPALONE, T. R; KUYAN, F. A.Journal of the Electrochemical Society. 1988, Vol 135, Num 2, pp 471-476, issn 0013-4651Article

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