Thermal performance and microstructure of lead versus lead-free solder die attach interface in power device packagesSTINSON-BAGBY, Kelly; HUFF, Dan; KATSIS, Dimos et al.Electronics recycling summitIEEE international symposium on electronics and the environment (ISEE). 2004, pp 27-32, isbn 0-7803-8250-1, 1Vol, 6 p.Conference Paper

An analysis of the dynamic behavior of field-limiting ring-passivation systemsJOHNSON, M. K; ANNIS, A. D; SANDOE, J. N et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 6, pp 1203-1211, issn 0018-9383, 9 p.Article

Study on methane HCCI combustion process of micro free-piston power deviceJIN BAI; QIAN WANG; ZHIXIA HE et al.Applied thermal engineering. 2014, Vol 73, Num 1, pp 1066-1075, issn 1359-4311, 10 p.Article

Dispositifs intégrés de puissance à couplage direct pour automatismesLINIJCHUK, I. A; STRASHNOV, A. A; ZELISKO, V. S et al.Èlektrotehnika (Moskva, 1963). 1984, Num 3, pp 28-30, issn 0013-5860Article

Charged for successJEHOULET, Christophe; GREEN, Anthony.Power engineering international. 2002, Vol 10, Num 6, pp 63-67, issn 1069-4994, 3 p.Article

Commutateur de puissance dans la gamme des microsecondes ― le dynistor à enclenchement réversibleGREKHOV, I. V; GORBATYUK, A. V; KOSTINA, L. S et al.Žurnal tehničeskoj fiziki. 1983, Vol 53, Num 9, pp 1822-1826, issn 0044-4642Article

Simulation of a neural node using SET technologyVAN DE HAAR, Rudie; HOEKSTRA, Jaap.Lecture notes in computer science. 2003, pp 377-386, issn 0302-9743, isbn 3-540-00730-X, 10 p.Conference Paper

5th International Seminar on Power SemiconductorsBENDA, Vitezslav; CHARITAT, Georges; STOJADINOVIC, Ninoslav et al.Microelectronics journal. 2001, Vol 32, Num 5-6, issn 0959-8324, 153 p.Serial Issue

Nouvelles méthodes de commutation rapide de puissances élevées par des dispositifs à semi-conducteursGREKHOV, I. V.Èlektrotehnika (Moskva, 1963). 1984, Num 3, pp 21-25, issn 0013-5860Article

Superpower switch of microsecond rangeGREKHOV, I. V; GORBATYUK, A. V; KOSTINA, L. S et al.Solid-state electronics. 1983, Vol 26, Num 11, issn 0038-1101, 1132Article

Simulation of wave power devicesJEFFERYS, E. R.Applied ocean research. 1984, Vol 6, Num 1, pp 31-39, issn 0141-1187Article

Analysis of screw pitch effects on the performance of bolt-clamped Langevin-type transducersADACHI, Kazunari; TAKAHASHI, Toru; HASEGAWA, Hiroshi et al.The Journal of the Acoustical Society of America. 2004, Vol 116, Num 3, pp 1544-1548, issn 0001-4966, 5 p.Article

Thermal investigation of high power optical devices by transient testingFARKAS, Gdbor; VAN VOORST VADER, Quint; POPPE, Andras et al.International workshop on thermal investigations of ICs and systems. 2003, pp 213-218, isbn 2-84813-020-2, 1Vol, 6 p.Conference Paper

Integration of power devices in advanced mixed signal analog BiCMOS technologyEFLAND, T. R.Microelectronics journal. 2001, Vol 32, Num 5-6, pp 409-418, issn 0959-8324Article

Transistors bipolaires et dispositifs intégrés à transistors de puissanceSHABOYAN, S. A; VARDANYAN, A. A; TATEVOSYAN, R. G et al.Èlektrotehnika (Moskva, 1963). 1988, Num 5, pp 30-33, issn 0013-5860Article

Power devices in gallium arsenideATKINSON, C. J.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 6, pp 264-271, issn 0143-7100Article

Characterization of Si-added aluminum oxide (AlSiO) films for power devicesKOMATSU, Naoyoshi; MASUMOTO, Keiko; AOKI, Hidemitsu et al.Applied surface science. 2010, Vol 256, Num 6, pp 1803-1806, issn 0169-4332, 4 p.Article

Un système de caractéristiques fondamentales pour l'électronique de puissance à semiconducteur. II. Les caractéristiques de performance techniqueBONDARENKO, N. N; BRATOLYUBOV, V. B.Elektromehanika. 1985, Num 8, pp 105-109, issn 0136-3360Article

Dispositifs de puissance à tension élevée. Etat de la technique et perspectivesBORONIN, K. D; EVSEEV, YU. A; LOKTAEV, YU. M et al.Èlektrotehnika (Moskva, 1963). 1984, Num 3, pp 19-21, issn 0013-5860Article

The TIL GTO thyristor―a power switch with unique turn-off featuresSILARD, A; RUSU, S.IEEE electron device letters. 1983, Vol 4, Num 10, pp 347-349, issn 0741-3106Article

Recent Advances in Power Semiconductor DevicesIEE proceedings. Circuits, devices and systems. 2001, Vol 148, Num 2, issn 1350-2409, 56 p.Conference Proceedings

Méthodes de calcul de la fiabilité des dispositifs à semiconducteur de puissanceGRIGOR'EV, A. M; SHPER, V. L.Èlektrotehnika (Moskva, 1963). 1984, Num 5, pp 42-49, issn 0013-5860Article

Trends in diffusion-length measurements in the original and dielectrically isolated-tub μ-silicon as a function of processingBURK, D. E; CHUNG, B. C.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 750-760, issn 0018-9383, 11 p.Article

Modeling of plasma devices for pulsed powerKUNC, J. A; GUNDERSEN, M. A.Applied physics letters. 1984, Vol 45, Num 1, pp 31-33, issn 0003-6951Article

L'automatisation du calcul de dispositifs à semiconducteurs de puissanceGRIGORENKO, V. P; KUZ'MIN, V. L; BAZANOV, O. V et al.Èlektrotehnika (Moskva, 1963). 1984, Num 7, pp 29-32, issn 0013-5860Article