kw.\*:("Power diode")
Results 1 to 25 of 313
Selection :
OCVD carrier lifetime in P+NN+ diode structures with axial carrier lifetime gradientBENDA, V; CERNIK, M; PAPEZ, V et al.Microelectronics journal. 2006, Vol 37, Num 3, pp 217-222, issn 0959-8324, 6 p.Conference Paper
Ablation of electrode surfaces in high power diodesSINCERNY, P; GILMAN, C; STRINGFIELD, R et al.Journal of applied physics. 1983, Vol 54, Num 12, pp 7170-7175, issn 0021-8979Article
Modelling of diode forward recovery characteristics using a modified charge-control equationTSENG, K. J.International journal of electronics. 1998, Vol 84, Num 5, pp 437-444, issn 0020-7217Article
Fast recovery diodes - : Reverse recovery behaviour and dynamic avalancheLUTZ, Josef.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 11-16Conference Paper
Experimental and numerical study of the recovery softness and overvoltage dependence on p-i-n diode designCOVA, P; MENOZZI, R; PORTESINE, M et al.Microelectronics journal. 2006, Vol 37, Num 5, pp 409-416, issn 0959-8324, 8 p.Article
Recombinations centers in electron- and neutron-irradiated silicon diodesPALMETSHOFER, L; FROMHERZ, T.AEU. Archiv für Elektronik und Übertragungstechnik. 1990, Vol 44, Num 3, pp 194-199, issn 0001-1096Article
High-power pulsed beam-lead IMPATT diodes for millimetre wavesPIERZINA, R; FREYER, J.Electronics Letters. 1985, Vol 21, Num 20, pp 913-915, issn 0013-5194Article
Single drift impatt diodes on diamond heat sinks for W-band frequenciesLEISTNER, D.IEE proceedings. Part I. Solid-state and electron devices. 1984, Vol 131, Num 2, pp 56-58, issn 0143-7100Article
100 mW high-power depolarized-superluminescent diode at 1550 nm wavelengthPARK, Seoijin; JIAN WEI; YIMIN HU et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61340E.1-61340E.8, issn 0277-786X, isbn 0-8194-6176-8, 1VolConference Paper
Les diodes laser prennent de la puissance = Laser diodes get more powerFERRARI, T; FRENEAUX, O.Technologies internationales (Strasbourg). 1997, Num 38, pp 3-6, issn 1165-8568Article
Deep energy levels in power diodes introduced by iridium diffusionBENDA, V; CERNIK, M; STEPKOVA, D et al.International conference on microelectronic. 1997, pp 391-394, isbn 0-7803-3664-X, 2VolConference Paper
Compensation of microwave properties of silicon double-drift read diode for high bias current operationPATI, S. P.Semiconductor science and technology. 1992, Vol 7, Num 3, pp 352-356, issn 0268-1242Article
A high-power GaAlAs superluminescent diode with an antireflective window structureTATEOKA, K; NAITO, H; YURI, M et al.IEEE journal of quantum electronics. 1991, Vol 27, Num 6, pp 1568-1573, issn 0018-9197Article
Modélisation et simulation électrothermique en electronique de puissance = Power electronics : modelisation and electrothermal simulationGLAO, D. S; DURASTANTI, J. F; TORTEL, V et al.Colloque annuel - SFT. 2000, pp 771-776, issn 1258-164X, isbn 2-84299-200-8Conference Paper
Improved recovery of fast power diodes with self-adjusting p emitter efficiencySCHLANGENOTTO, H; SERAFIN, J; SAWITZKI, F et al.IEEE electron device letters. 1989, Vol 10, Num 7, pp 322-324, issn 0741-3106Article
Une nouvelle méthode de stimulation; application aux diodes de puissance = A new simulation method for power diodesMOREL, H; HAMEL, O; BESBES, K et al.Revue générale de l'électricité (Paris). 1989, Num 8, pp 30-34, issn 0035-3116, 5 p.Article
DIODES DE PUISSANCE A BASE D'HETEROJONCTIONS AVEC UN DOMAINE DE BASE MODULE PAR LE RAYONNEMENT DE RECOMBINAISONKOROL'KOV VI; ROMANOVA EP; YUFEREV VS et al.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 9; PP. 1689-1693; BIBL. 3 REF.Article
INDICES TECHNICO-ECONOMIQUES DES SYSTEMES DE REFROIDISSEMENT DES SEMICONDUCTEURS A STRUCTURE P-N DE GRAND DIAMETREKHAZEN MM; IVANOV VI; SEMENOV GM et al.1977; ELEKTROTEKHNIKA; S.S.S.R.; DA. 1977; NO 12; PP. 25-29; BIBL. 9 REF.Article
COMPARAISON DES PARAMETRES, DES THYRISTORS ET DES DIODES DE PUISSANCE, DOPES A L'OR ET AU PLATINEASINA SS; DUMANEVICH AN; RUKHAMKIN VM et al.1979; RADIOTEKH. E EHLEKTRON.; SUN; DA. 1979; VOL. 24; NO 5; PP. 1050-1054; BIBL. 5 REF.Article
Irradiation of bypass diodes up to 2.2E14 neutron/cm2 and 1.3 kGy for the FAIR projectFLOCH, E; MUSTAFIN, E; KANTSYREV, A et al.IEEE transactions on applied superconductivity. 2007, Vol 17, Num 2, pp 2462-2465, issn 1051-8223, 4 p., 2Conference Paper
High-power P-i-N diode with local lifetime control using palladium diffusion controlled by radiation defectsVOBECKY, Jan; HAZDRA, Pavel.IEEE electron device letters. 2005, Vol 26, Num 12, pp 873-875, issn 0741-3106, 3 p.Article
Characterization of recombination centers in Si epilayers after He implantation by direct measurement of local lifetime distribution with the AC lifetime profiling techniqueSPIRITO, Paolo; DALIENTO, Santolo; SANSEVERINO, Annunziata et al.IEEE electron device letters. 2004, Vol 25, Num 9, pp 602-604, issn 0741-3106, 3 p.Article
Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in p+-n--n+ DiodesBABURSKE, Roman; HEINZE, Birk; LUTZ, Josef et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 8, pp 2164-2172, issn 0018-9383, 9 p.Article
Effect of a buffer layer in the epi-substrate region to boost the avalanche capability of a 100V schottky diodeIRACE, A; BREGLIO, G; SPIRITO, P et al.Microelectronics and reliability. 2006, Vol 46, Num 9-11, pp 1784-1789, issn 0026-2714, 6 p.Conference Paper
High-power LEDs and the organization of lightPAOLINI, Steve; HARBERS, Gerard.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 613402.1-613402.13, issn 0277-786X, isbn 0-8194-6176-8, 1VolConference Paper