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160 GHz harmonic mode-locked AlGaInAs 1.55 μm strained quantum-well compound-cavity laserLIANPING HOU; HAJI, Mohsin; DYLEWICZ, Rafal et al.Optics letters. 2010, Vol 35, Num 23, pp 3991-3993, issn 0146-9592, 3 p.Article

Strained II-VI quantum well for a room-temperature blue-green laserDOYEOL AHN; TAE-KYUNG YOO; SHUN LIEN CHUANG et al.Japanese journal of applied physics. 1992, Vol 31, Num 5A, pp L556-L559, issn 0021-4922, 2Article

Intraband relaxation time in compressive-strained quantum-well lasersSEOUNG HWAN PARK; ASADA, M; KUDO, K et al.Japanese journal of applied physics. 1992, Vol 31, Num 10, pp 3385-3386, issn 0021-4922, 1Article

Envelope function calculations of linear and nonlinear optical gains in a strained-layer quantum-well laserDOYEOL AHN; TAE-KYUNG YOO.IEEE journal of quantum electronics. 1993, Vol 29, Num 12, pp 2864-2872, issn 0018-9197Article

Many-body treatment of the modulation response in a strained quantum well semiconductor laser mediumCHOW, W. W; PEREIRA, M. F; KOCH, S. W et al.Applied physics letters. 1992, Vol 61, Num 7, pp 758-760, issn 0003-6951Article

Germanium islands embedded in strained silicon quantum wells grown on patterned substratesBEYER, A; MÜLLER, E; SIGG, H et al.Microelectronics journal. 2002, Vol 33, Num 7, pp 525-529, issn 0959-8324Conference Paper

Two-dimensional metal-insulator transition and in-plane magnetoresistance in a high-mobility strained Si quantum wellLAI, K; PAN, W; TSUI, D. C et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 8, pp 081313.1-081313.4, issn 1098-0121Article

The influence of antimony on the optical quality of highly strained GaInNAs/GaAs QWs investigated by contacless electroreflectanceKUDRAWIEC, R; YUEN, H. B; BANK, S. R et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 2, pp 543-546, issn 1862-6300, 4 p.Conference Paper

Microscopic theory for the intersubband optical response of strained quantum well laser mediaPEREIRA, M. F; HEALY, S; O'REILLY, E. P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 240-246, issn 0277-786X, isbn 0-8194-5810-4, 1Vol, 7 p.Conference Paper

Effects of native oxides and optical confinement on microcavity VCSEL spontaneous emissionLOEHR, J. P; NOBLE, M. J; LOTT, J. A et al.SPIE proceedings series. 1998, pp 830-840, isbn 0-8194-2722-5, 2VolConference Paper

A single-pass single-amplifier polarization-insensitive semiconductor laser amplifier configurationTIEMEIJER, L. F.IEEE journal of quantum electronics. 1994, Vol 30, Num 1, pp 37-42, issn 0018-9197Article

Polarisation insensitive photodector characteristics of a tensile strained barrier laser diodeSUZUKI, Y; KUROSAKI, T; TOHMORI, Y et al.Electronics Letters. 1994, Vol 30, Num 3, pp 230-232, issn 0013-5194Article

Strain effect on K factor, differential gain and nonlinear gain coefficient for InGaAs/InGaAsP strained multiquantum well lasersSHIMIZU, J.-I; KIMURA, A; NANIWAE, K et al.Electronics Letters. 1993, Vol 29, Num 7, pp 579-581, issn 0013-5194Article

(InAS)₁/(GaAs)₄ superlattices quantum-well laserDUTTA, N. K; NARESH CHAND; LOPATA, J et al.Applied physics letters. 1992, Vol 60, Num 8, pp 924-925, issn 0003-6951Article

Reliable InGaAs quantum well lasers at 1.1 μmYELLEN, S. L; WATERS, R. G; YORK, P. K et al.Electronics Letters. 1991, Vol 27, Num 7, pp 552-554, issn 0013-5194, 3 p.Article

Index-guided operation in narrow stripe InGaAs-GaAs strained-layer quantum well heterostructure lasers by MeV oxygen implantationALWAN, J. J; HONIG, J; FAVARO, M. E et al.Applied physics letters. 1991, Vol 58, Num 19, pp 2058-2060, issn 0003-6951Article

Molecular beam epitaxyARTHUR, John R.Surface science. 2002, Vol 500, Num 1-3, pp 189-217, issn 0039-6028Article

High-injection behavior of InGaAs quantum wellELISEEV, P. G; AKIMOVA, I. V.SPIE proceedings series. 1999, pp 728-739, isbn 0-8194-3095-1Conference Paper

Optimising 1550 nm InGaAsP strain compensated MQW lasers close to the miscibility gapCRUMP, P. A; LAGE, H; RING, W. S et al.IEE proceedings. Optoelectronics. 1998, Vol 145, Num 1, pp 7-11, issn 1350-2433Article

Gain saturation properties of a semiconductor gain medium with tensile and compressive strain quantum wells : Strained-layer optoelectronics materials and devicesDUBOVITSKY, S; STEIER, W. H; MATHUR, A et al.IEEE journal of quantum electronics. 1994, Vol 30, Num 2, pp 380-391, issn 0018-9197Article

Pure effects of strain in strained-layer multiple-quantum-well lasersYASAKA, H; IGA, R; NOGUCHI, Y et al.IEEE journal of quantum electronics. 1993, Vol 29, Num 4, pp 1098-1103, issn 0018-9197Article

Simple evaluation of linewidth-enhancement factor in quantum well laser with strainWARTAK, M. S; MAKINO, T.Journal of applied physics. 1993, Vol 73, Num 9, pp 4715-4717, issn 0021-8979Article

Estimation of the reliability of 0.98 μm InGaAs/GaAs strained quantum well lasersOKAYASU, M; FUKUDA, M.Journal of applied physics. 1992, Vol 72, Num 6, pp 2119-2124, issn 0021-8979Article

Band-edge hole mass in strained-quantum-well structuresSUEMUNE, I.Physical review. B, Condensed matter. 1991, Vol 43, Num 17, pp 14099-14106, issn 0163-1829Article