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ti.\*:("Proceedings of the Eighth International Conference on Defects - Recognition, Imaging and Physics in Semiconductors, Narita, Japan, September 15-18, 1999")

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Proceedings of the Eighth International Conference on Defects - Recognition, Imaging and Physics in Semiconductors, Narita, Japan, September 15-18, 1999OGAWA, Tomoya; TAJIMA, Michio.Journal of crystal growth. 2000, Vol 210, Num 1-3, issn 0022-0248, 432 p.Conference Proceedings

Nano-scale defect analysis by BEEMVON KÄNEL, H; MEYER, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 401-407, issn 0022-0248Conference Paper

Comparison between standard and near-field cathodoluminescenceHEIDERHOFF, R; SERGEEV, O. V; LIU, Y. Y et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 303-306, issn 0022-0248Conference Paper

TEM assessment of GaN epitaxial growthBROWN, P. D.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 143-150, issn 0022-0248Conference Paper

Complex defects in electron-irradiated ZnSSHONO, Y; OKA, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 278-282, issn 0022-0248Conference Paper

Laser scattering experiments in VCz GaAsNAUMANN, M; DONECKER, J; NEUBERT, M et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 203-206, issn 0022-0248Conference Paper

Analysis of grown-in defects in Czochralski SiITSUMI, M.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 1-6, issn 0022-0248Conference Paper

Synchrotron-based impurity mappingMCHUGO, S. A; THOMPSON, A. C; FLINK, C et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 395-400, issn 0022-0248Conference Paper

Stoichiometry and Te related defect in n-Al0.3Ga0.7AsMURAI, A; OYAMA, Y; NISHIZAWA, J et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 251-254, issn 0022-0248Conference Paper

Can physical analysis aid in device characterization?CHAN, D. S. H; CHIM, W. K; PHANG, J. C. H et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 323-330, issn 0022-0248Conference Paper

Annealing behaviour of electrically active point defects in gamma-irradiated n-GaN filmsEMTSEV, V. V; DAVYDOV, V. Yu; SEMCHINOVA, O et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 273-277, issn 0022-0248Conference Paper

Investigation of deep levels and precipitates related to molybdenum in silicon by DLTS and scanning infrared microscopySANDHU, A; OGIKUBO, T; GOTO, H et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 116-121, issn 0022-0248Conference Paper

Electron-beam-induced-current study of artificial twist boundaries in bonded Si wafersIKEDA, K; SEKIGUCHI, T; ITO, S et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 90-93, issn 0022-0248Conference Paper

AFM and photoluminescence characterization of defects in the mirror-polished ZnSe bulk crystals and MBE-grown homoepitaxial layersKISHINO, M; TAGUCHI, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 230-233, issn 0022-0248Conference Paper

Effects of an inhomogeneous carrier concentration depth profile on deep-level transient spectroscopy measurementsITO, A; TOKUDA, Y.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 384-387, issn 0022-0248Conference Paper

Microscopic photoluminescence evaluation of bright spots in Fe-doped InP wafersWAKAHARA, M; UCHIDA, M; WARASHINA, M et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 226-229, issn 0022-0248Conference Paper

Characterization of defects in annealed Czochralski-grown silicon wafers by photoluminescence methodYAMAMOTO, T; NISHIHARA, K.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 69-73, issn 0022-0248Conference Paper

Detailed observation of the photoquenching effect of EL2 in semi-insulating GaAs by the piezoelectric photoacoustic measurementsFUKUYAMA, A; AKASHI, Y; SUEMITSU, M et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 255-259, issn 0022-0248Conference Paper

Sensitivity of contactless transient spectroscopy and actual measurement of localized states in oxidized Si waferYOSHIDA, H; NAKANISHI, R; KISHINO, S et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 379-383, issn 0022-0248Conference Paper

Simulation of point defect distributions in silicon crystals during melt-growthNAKAMURA, K; SAISHOJI, T; TOMIOKA, J et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 49-53, issn 0022-0248Conference Paper

Thermal behavior of He-irradiation-induced defects in siliconNAKANO, Y; ISHIKO, M; TADANO, H et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 80-84, issn 0022-0248Conference Paper

Effect of C/B sequential implantation on the B acceptors in 4H-SiCNAKANO, Y; KACHI, T; TADANO, H et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 283-287, issn 0022-0248Conference Paper

Characterization of grown-in stacking faults and dislocations in CZ-Si crystals by bright field IR laser interferometerNAKAI, K; HASEBE, M; OHTA, K et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 20-25, issn 0022-0248Conference Paper

Lattice images of dislocations with edge components in GaN epilayers grown on Al2O3 substratesJUNYONG KANG; OGAWA, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 157-161, issn 0022-0248Conference Paper

Molecular dynamics analysis on diffusion of point defectsKAKIMOTO, K; UMEHARA, T; OZOE, H et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 54-59, issn 0022-0248Conference Paper

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