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Nature of noise in SIMS depth profiling dataMAKAROV, V. V.Surface and interface analysis. 1999, Vol 27, Num 9, pp 801-804, issn 0142-2421Article

Scattering by randomly rough dielectric surfaces and rough dielectric films : influence of the height distribution : Electromagnetic opticsCALVO-PEREZ, O; GREFFET, J. J; SENTENAC, A et al.Journal of optics. A, Pure and applied optics (Print). 1999, Vol 1, Num 4, pp 560-565, issn 1464-4258Conference Paper

Hadrons and other secondaries generated by cosmic-ray muons undergroundKHALCHUKOV, F. F; KOROLKOVA, E. V; KUDRYAVTSEV, V. A et al.Nuovo cimento della società italiana di fisica. C. 1995, Vol 18, Num 5, pp 517-529, issn 0390-5551Article

Investigation of pulsation characteristics of magnetic field at various depths within the relaxation zoneROMANOV, V. A; ROMANOV, D. V.Astronomičeskij žurnal. 1993, Vol 70, Num 4, pp 887-894, issn 0004-6299Article

Approaching the limits of high resolution depth profilingHOFMANN, S.Applied surface science. 1993, Vol 70-71, Num 1-4, pp 9-19, issn 0169-4332, AConference Paper

Advanced in Auger microanalysis for semiconductor technologyPAMLER, W.Surface and interface analysis. 1994, Vol 22, Num 1-12, pp 331-337, issn 0142-2421Conference Paper

Origin of differences between MCs⁺ and MCs⁺₂ SIMS depth profilesMIYAMOTO, Takashi; NUMAO, Shigenori; HASEGAWA, Takahiro et al.Surface and interface analysis. 2013, Vol 45, Num 1, pp 101-102, issn 0142-2421, 2 p.Conference Paper

Glow discharge spectroscopy for depth profile analysis : from micrometer to sub-nanometer layersPISONERO, Jorge.Analytical and bioanalytical chemistry. 2006, Vol 384, Num 1, pp 47-49, 3 p.Article

Comparison of urban and rural particulate air pollution characteristics obtained by SIMS and SSMSKONARSKI, P; HAŁUSZKA, J; CWIL, M et al.Applied surface science. 2006, Vol 252, Num 19, pp 7010-7013, issn 0169-4332, 4 p.Conference Paper

An investigation of the distribution of minor components in complex polymeric paint formulations using ToF-SIMS depth profilingHINDER, Steven J; WATTS, John F; SIMMONS, Garnett C et al.Surface and interface analysis. 2008, Vol 40, Num 3-4, pp 436-440, issn 0142-2421, 5 p.Conference Paper

Latest developments for the CAMECA ULE-SIMS instruments: IMS Wf and SC-UltraDE CHAMBOST, E; MERKULOV, A; PERES, P et al.Applied surface science. 2004, Vol 231-32, pp 949-953, issn 0169-4332, 5 p.Conference Paper

Availability of layered certified reference materials for industrial application of glow discharge spectrometric depth profilingWINCHESTER, M; BECK, U.Surface and interface analysis. 1999, Vol 27, Num 10, pp 930-935, issn 0142-2421Article

Cesium redeposition artifacts during low energy ToF-SIMS depth profilingVITCHEV, R. G; BRISON, J; HOUSSIAU, L et al.Applied surface science. 2009, Vol 255, Num 17, pp 7586-7589, issn 0169-4332, 4 p.Article

Combined AES and TOF-SIMS analysis of a thermally treated Ag/Ti/Al metallization systemSCHEITHAUER, U; TREICHLER, R.Surface and interface analysis. 2006, Vol 38, Num 4, pp 296-299, issn 0142-2421, 4 p.Conference Paper

Applications of SIMS to cultural heritage studiesADRIAENS, A; DOWSETT, M. G.Applied surface science. 2006, Vol 252, Num 19, pp 7096-7101, issn 0169-4332, 6 p.Conference Paper

Depth profiling of emerging materials for semiconductor devicesRONSHEIM, P. A.Applied surface science. 2006, Vol 252, Num 19, pp 7201-7204, issn 0169-4332, 4 p.Conference Paper

Analysis of electrically non-conducting sample structures with electron and mass spectroscopic methodsOECHSNER, H.Thin solid films. 1999, Vol 341, Num 1-2, pp 105-108, issn 0040-6090Conference Paper

Tunneling probes for metrological applications using a long-range profilometerLIU, X; SMITH, S. T; CHETWYND, D. G et al.Review of scientific instruments. 1993, Vol 64, Num 11, pp 3161-3168, issn 0034-6748Article

Recent results on the use of model resolution functions for the deconvolution of depth profiling dataKOTZ, Samuel; NADARAJAH, Saralees.Surface and interface analysis. 2007, Vol 39, Num 6, pp 554-555, issn 0142-2421, 2 p.Article

Model-independent determination of 2D strain distribution in ion-implanted silicon crystals from x-ray diffraction dataNIKULIN, A. YU; STEVENSON, A. W; HASHIZUME, H et al.Semiconductor science and technology. 1997, Vol 12, Num 3, pp 350-354, issn 0268-1242Article

Damage depth profiles determination by ellipsometry : a new numerical algorithmTONOVA, D; KONOVA, A.Surface science. 1993, Vol 293, Num 3, pp 195-201, issn 0039-6028Article

SIMS profile quantification by maximum entropy deconvolution : Quantive surface analysisALLEN, P. N; DOWSETT, M. G; COLLINS, R et al.Surface and interface analysis. 1993, Vol 20, Num 8, pp 696-702, issn 0142-2421Conference Paper

Nondestructive in-depth composition profile of oxy-hydroxide nanolayers on iron surfaces from ARXPS measurementOLLA, Maurizio; NAVARRA, Gabriele; ELSENER, Bernhard et al.Surface and interface analysis. 2006, Vol 38, Num 5, pp 964-974, issn 0142-2421, 11 p.Article

Some applications of SIMS in conservation science, archaeometry and cosmochemistryMCPHAIL, D. S.Applied surface science. 2006, Vol 252, Num 19, pp 7107-7112, issn 0169-4332, 6 p.Conference Paper