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Bias dependence of 0.25μm pHEMT parasitic elements as determined with a direct extraction methodCAMPBELL, Charles F.Technical digest - IEEE Gallium Arsenide Integrated Circuit Symposium. 2002, pp 237-240, issn 1064-7775, isbn 0-7803-7447-9, 4 p.Conference Paper

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Inverted pseudomorphic high electron mobility heterostructures by atmospheric pressure metalorganic chemical vapor depositionPAN, N; CARTER, J; ZHENG, X. L et al.Applied physics letters. 1991, Vol 58, Num 1, pp 71-73, issn 0003-6951, 3 p.Article

Ku-band high efficiency high gain pseudomorphic HEMTSMITH, P. M; KOPP, W. F; HO, P et al.Electronics Letters. 1991, Vol 27, Num 3, pp 270-271, issn 0013-5194, 2 p.Article

Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditionsHISAKA, Takayuki; SASAKI, Hajime; NOGAMI, Yoichi et al.Microelectronics and reliability. 2009, Vol 49, Num 12, pp 1515-1519, issn 0026-2714, 5 p.Article

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Effects of pressure and capping layer thickness on sub-micron T-gate recess etching of GaAs p-HEMTs by SiCl₄/SiF₄/O₂ reactive ion etchLI, X; ELGAID, K; MCLELLAND, H et al.Microelectronic engineering. 2001, Vol 57-58, pp 633-640, issn 0167-9317Conference Paper

Etude de duplexeur : Intégration d'un circulateur actif et d'un système d'adaptation automatique d'impédance = Duplexer : Integration of a Circulator and an Automatic Impedance Matching SystemNunes De Lima, Robson; Huyart, Bernard.2001, 170 p.Thesis

Intrinsic reliability of a 12 V field plate pHEMTGAW, Craig; ARNOLD, Thomas; MOORE, Karen et al.Microelectronics and reliability. 2008, Vol 48, Num 7, pp 974-984, issn 0026-2714, 11 p.Conference Paper

Improved characteristics of formal-passivated pseudomorphic high electron mobility transistorLAI, P.-H; FU, S.-I; TSAI, Y.-Y et al.Electronics Letters. 2007, Vol 43, Num 1, pp 54-56, issn 0013-5194, 3 p.Article

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The Temperature Dependency of a GaAs pHEMT Wideband IQ Modulator ICIHARA, Kiyoyuki.IEEE Radio and Wireless Conference. 2004, pp 223-225, isbn 0-7803-8451-2, 1Vol, 3 p.Conference Paper

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Examination of hot carrier effects of the AlGaAs/InGaAs pHEMT through device simulationSTEIGHNER, Jason B; YUAN, Jiann S.Microelectronics and reliability. 2012, Vol 52, Num 12, pp 2932-2940, issn 0026-2714, 9 p.Article

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