Theoretical analysis of dynamic response of asymmetric dual quantum well lasersIKEDA, S; SHIMIZU, A.Applied physics letters. 1992, Vol 61, Num 9, pp 1016-1018, issn 0003-6951Article

Quantum wells in multiple junction photovoltaicsTIBBITS, Thomas N. D; LUMB, Matthew P; DOBBIN, Alison et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7933, issn 0277-786X, isbn 978-0-8194-8470-3, 793303.1-793303.11Conference Paper

A comparison of optoelectronic properties of lattice-matched and strained quantum-well and quantum-wire structuresVURGAFTMAN, I; HINCKLEY, J. M; SINGH, J et al.IEEE journal of quantum electronics. 1994, Vol 30, Num 1, pp 75-84, issn 0018-9197Article

Non-equilibrium analysis of the two-color operation in semiconductor quantum-well lasersBÄUMNER, Ada; KOCH, Stephan W; MOLONEY, Jerome V et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 4, pp 843-846, issn 0370-1972, 4 p.Article

Microscopic theory for the intersubband optical response of strained quantum well laser mediaPEREIRA, M. F; HEALY, S; O'REILLY, E. P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 240-246, issn 0277-786X, isbn 0-8194-5810-4, 1Vol, 7 p.Conference Paper

Envelope function calculations of linear and nonlinear optical gains in a strained-layer quantum-well laserDOYEOL AHN; TAE-KYUNG YOO.IEEE journal of quantum electronics. 1993, Vol 29, Num 12, pp 2864-2872, issn 0018-9197Article

Thermal-anneal wavelength modification of multiple-well p-n Al_xGa_1-xAs-GaAs quantum-well lasersMEEHAN, K; BROWN, J. M; GAVRILOVIC, P et al.Journal of applied physics. 1984, Vol 55, Num 7, pp 2672-2675, issn 0021-8979Article

Theory of asymmetric dual quantum well lasersSHIMIZU, A; IKEDA, S.Applied physics letters. 1991, Vol 59, Num 7, pp 765-767, issn 0003-6951Article

Wide-range wavelength tuning of an asymmetric dual quantum well laser with inhomogeneous current injectionIKEDA, S; SHIMIZU, A; SEKIGUCHI, Y et al.Applied physics letters. 1989, Vol 55, Num 20, pp 2057-2059, issn 0003-6951Article

Broad area semiconductor lasers with Gaussian-like current distributionQIAO, Zhongliang; ZHANG, Jing; LIU, Chunling et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, Vol 6824, pp 682415.1-682415.7, issn 0277-786X, isbn 978-0-8194-6999-1, 1VolConference Paper

Coulomb effects on quantum-well luminescence spectra and radiative recombination timesHOYER, Walter; KIRA, Mackillo; KOCH, Stephan W et al.Journal of the Optical Society of America. B, Optical physics (Print). 2007, Vol 24, Num 6, pp 1344-1353, issn 0740-3224, 10 p.Article

High device yield and performance of InGaAsP MQW DFB lasers with absorptive gratingPARK, S. S; PARK, S. W; YU, J. S et al.Electronics Letters. 2007, Vol 43, Num 20, pp 1095-1096, issn 0013-5194, 2 p.Article

Coherent ultrafast nonlinear optical processes in semiconductor quantum wellsCHEMLA, D. S.Solid state communications. 1994, Vol 92, Num 1-2, pp 37-43, issn 0038-1098Article

Transformations between symmetric sets of quantum statesDUNJKO, Vedran; ANDERSSON, Erika.Journal of physics. A, Mathematical and theoretical (Print). 2012, Vol 45, Num 36, issn 1751-8113, 365304.1-365304.21Article

Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structuresCHAISAKUL, Papichaya; MARRIS-MORINI, Delphine; ISELLA, Giovanni et al.Optics letters. 2010, Vol 35, Num 17, pp 2913-2915, issn 0146-9592, 3 p.Article

Orbital mismatch in semiconductor quantum wellsCADE, N. A.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 20, pp 3885-3893, issn 0022-3719Article

Role of cladding layer thicknesses on strained-layer InGaAs/GaAs single and multiple quantum well lasersLIU, D. C; LEE, C. P; TSAI, C. M et al.Journal of applied physics. 1993, Vol 73, Num 12, pp 8027-8034, issn 0021-8979Article

Low-threshold 1.5 μm compressive-strained multiple- and single-quantum-well lasersCHUNG-EN ZAH; RAJARAM BHAT; FAVIRE, F. J et al.IEEE journal of quantum electronics. 1991, Vol 27, Num 6, pp 1440-1450, issn 0018-9197Article

Polarization qubit phase gate between two far-infrared pulses in three-coupled quantum wellsXIANGYING HAO; SI, Liu-Gang; CHUNLING DING et al.Journal of the Optical Society of America. B, Optical physics (Print). 2010, Vol 27, Num 9, pp 1792-1798, issn 0740-3224, 7 p.Article

Analysis and application of theoretical gain curves to the design of multi-quantum-well lasersMCILROY, P. W. A; KUROBE, A; UEMATSU, Y et al.IEEE journal of quantum electronics. 1985, Vol 21, Num 12, pp 1958-1963, issn 0018-9197Article

Comment on polarization dependent momentum matrix elements in quantum well lasersYAMANISHI, M; SUEMUNE, I.Japanese journal of applied physics. 1984, Vol 23, Num 1, pp 35-36, issn 0021-4922Article

On the properties of hot electrons in semiconductor quantum wellsRIDLEY, B. K.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 30, pp 5357-5365, issn 0022-3719Article

Photon switch in a quantum well by quantum interference in interband transitionsYAN XUE; SU, Xue-Mei; GANG WANG et al.Optics communications. 2005, Vol 249, Num 1-3, pp 231-237, issn 0030-4018, 7 p.Article

Small turn-on delay time in 1.3 μm InAsP/InP strained double quantum-well lasers with very-low threshold currentFUKUSHIMA, T; KASUKAWA, A; IWASE, M et al.IEEE photonics technology letters. 1993, Vol 5, Num 2, pp 117-119, issn 1041-1135Article

Second quantized state oscillation and wavelength switching in strained-layer multiquantum-well lasersCHEN, T. R; YUHUA ZHUANG; XU, Y. J et al.Applied physics letters. 1992, Vol 60, Num 24, pp 2954-2956, issn 0003-6951Article