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Results 1 to 25 of 551

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Batch sequencing for run-to-run control : Application to chemical mechanical polishingCHEN, Yih-Hang; SU, An-Jhih; SHIU, Sheng-Jyh et al.Industrial & engineering chemistry research. 2005, Vol 44, Num 13, pp 4676-4686, issn 0888-5885, 11 p.Article

Dynamic mechanisms of chemical mechanical polishing based on frictional characteristicsHOMMA, Yoshio.Japanese journal of tribology. 2006, Vol 51, Num 4, pp 411-419, issn 1045-7828, 9 p.Article

Characterization of slurries used for chemical-mechanical polishing (CMP) in the semiconductor industryKUNTZSCH, Timo; WITNIK, Ulrike; HOLLATZ, Mark et al.Chemical engineering & technology. 2003, Vol 26, Num 12, pp 1235-1239, issn 0930-7516, 5 p.Article

Abrasive-free polishing for copper damascene interconnectionKONDO, Seiichi; SAKUMA, Noriyuki; HOMMA, Yoshio et al.Journal of the Electrochemical Society. 2000, Vol 147, Num 10, pp 3907-3913, issn 0013-4651Article

Exploring CMP solutions to planarity challenges with tungsten plugsMENDONCA, J; MURELLA, K; KIM, I et al.Thin solid films. 1998, Vol 320, Num 1, pp 103-109, issn 0040-6090Conference Paper

Chemical polishing of crystals glass with concentrated acidsLAZAREV, Y. S; DROZHZHINOV, V. A.Glass and ceramics. 1990, Vol 47, Num 11-12, pp 433-434, issn 0361-7610, 2 p.Article

A new pad-scanning, local- CMP (PASCAL-CMP) technique for reliable Cu-damascene interconnect formationHAYASHI, Y; ONODERA, T; SASAKI, N et al.IEEE 1999 international interconnect technology conference. 1999, pp 100-102, isbn 0-7803-5174-6Conference Paper

Modeling of chemical-mechanical polishing : a review : Special section on TCAD : process modelingNANZ, G; CAMILLETTI, L. E.IEEE transactions on semiconductor manufacturing. 1995, Vol 8, Num 4, pp 382-389, issn 0894-6507Article

«Brilliant» acid-free holloware processingGlass (Redhill). 1991, Vol 68, Num 1, issn 0017-0984, p. 24Article

Microscale dishing effect in a chemical mechanical planarization process for trench isolationSMEKALIN, K; FERTIG, D.Journal of the Electrochemical Society. 1996, Vol 143, Num 12, pp L281-L283, issn 0013-4651Article

Acid polishing of crystal glassESCHENBACHER, M.Glass technology. 1987, Vol 28, Num 4, pp 168-170, issn 0017-1050Article

Characteristics in chemical-mechanical polishing of copper : comparison of polishing padsSTAVREVA, Z; ZEIDLER, D; PLÖTNER, M et al.Applied surface science. 1997, Vol 108, Num 1, pp 39-44, issn 0169-4332Article

Present and future role of chemical mechanical polishing in wafer bondingGUI, C; ELWENSPOEK, M; GARDENIERS, J. G. E et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 6, pp 2198-2204, issn 0013-4651Article

The inevitable shakeout in the CMP equipment marketO'MARA, W.Solid state technology. 1998, Vol 41, Num 5, pp 54-58, issn 0038-111X, 3 p.Article

Chemomechanical polishing of gallium arsenide and cadmium telluride to subnanometre surface FinishMCGHEE, L; MCMEEKIN, S. G; NICOL, I et al.Journal of material chemistry. 1994, Vol 4, Num 1, pp 29-34, issn 0959-9428Article

Friction Modeling in Linear Chemical-Mechanical PlanarizationJINGANG YI.IEEE control systems. 2008, Vol 28, Num 5, pp 59-78, issn 1066-033X, 20 p.Article

Oberflächenbehandlung : Kunststoff-Stossstangen mit Stickstoff kaltpolieren = Surface treatment: cold polishing plastic bumpers with nitrogenPlastverarbeiter. 1992, Vol 43, Num 10, pp 110-112, issn 0032-1338, 2 p.Article

Integration of chemical-mechanical polishing into CMOS integrated circuit manufacturingLANDIS, H; BURKE, P; COTE, W et al.Thin solid films. 1992, Vol 220, Num 1-2, pp 1-7, issn 0040-6090Conference Paper

Application of CMP process monitor to Cu polishingKOJIMA, T; MIYAJIMA, M; AKABOSHI, F et al.IEEE transactions on semiconductor manufacturing. 2000, Vol 13, Num 3, pp 293-299, issn 0894-6507Article

Ceramic applications in chemical mechanical planarizationLOUGHER, W.American Ceramic Society bulletin. 1999, Vol 78, Num 5, pp 97-100, issn 0002-7812Article

Novel dark-field patterned inspection system for 0.15-μm CMP processesSAIKI, K; NOGUCHI, M; KONDO, Y et al.IEEE international symposium on semiconductor manufacturing conference. 1999, pp 191-194, isbn 0-7803-5403-6Conference Paper

Endpoint detection for CMP : Special section on chemical-mechanical planarizationBIBBY, T; HOLLAND, K.Journal of electronic materials. 1998, Vol 27, Num 10, pp 1073-1081, issn 0361-5235Article

Slurries and pads face 2001 challengesBRAUN, A. E.Semiconductor international. 1998, Vol 21, Num 13, pp 65-74, issn 0163-3767, 6 p.Article

Tungsten chemical mechanical polishingELBEL, N; NEUREITHER, B; EBERSBERGER, B et al.Journal of the Electrochemical Society. 1998, Vol 145, Num 5, pp 1659-1664, issn 0013-4651Article

Polissage par tribofinition = Polishing by tribofinishingSurfaces (Paris). 1997, Num 274, pp 54-58, issn 0585-9840, 3 p.Conference Paper

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