A critique of semiempirical formulae for the sputtering yield near threshold energyZALM, P. C.Radiation effects. 1983, Vol 86, Num 1, pp 29-34, issn 0033-7579Article

Reactive ion beam deposition of aluminum nitride thin filmsBHAT, S; ASHOK, S; FONASH, S. J et al.Journal of electronic materials. 1985, Vol 14, Num 4, pp 405-418, issn 0361-5235Article

Surface morphology evolution of sputtered, moving substratesCARTER, G; NOBES, M. J; CRUZ, S. A et al.Journal of materials science letters. 1984, Vol 3, Num 6, pp 523-527, issn 0261-8028Article

MODEL CALCULATION OF ION COLLECTION IN THE PRESENCE OF SPUTTERING. I. ZERO ORDER APPROXIMATION.SCHULZ F; WITTMAACK K.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 29; NO 1; PP. 31-40; BIBL. 42 REF.Article

SELF-SPUTTERING OF GE SINGLE CRYSTALS.HOLMEN G.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 24; NO 1; PP. 7-11; BIBL. 29 REF.Article

Nickel catalysed sixfold ring clustering and graphitisation in C:Ni nanocomposites : A Raman analysisKRAUSE, M; ABRASONIS, G; KOLITSCH, A et al.Physica status solidi. B. Basic research. 2007, Vol 244, Num 11, pp 4236-4239, issn 0370-1972, 4 p.Conference Paper

Measurements of losses in high reflectance mirrors coated for λ=514.5 nmROBERTSON, N. A; STRAIN, K. A; HOUGH, J et al.Optics communications. 1989, Vol 69, Num 5-6, pp 345-348, issn 0030-4018Article

Angular-resolved ion-bean sputtering apparatus for large-area depositionMOTOHIRO, T; YAMADENA, H; TAGA, Y et al.Review of scientific instruments. 1989, Vol 60, Num 8, pp 2657-2665, issn 0034-6748Article

Anomalous coverage dependence of secondary-ion emission from overlayersYU, M. L.Physical review. B, Condensed matter. 1984, Vol 29, Num 4, pp 2311-2313, issn 0163-1829Article

Some useful yield estimates for ion beam sputtering and ion plating at low bombarding energiesZALM, P. C.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1984, Vol 2, Num 2, pp 151-152, issn 0734-211XArticle

Silicon nitride and oxynitride films prepared by ion beam reactive sputteringBURDOVITSIN, V. A.Thin solid films. 1983, Vol 105, Num 3, pp 197-202, issn 0040-6090Article

Simulation of ion beam sputtering with SDTrimSP, TRIDYN and SRIMHOFSÄSS, H; ZHANG, K; MUTZKE, A et al.Applied surface science. 2014, Vol 310, pp 134-141, issn 0169-4332, 8 p.Conference Paper

In situ ellipsometric study of optical properties of ultrathin filmsYAMAMOTO, M; NAMIOKA, T.Applied optics. 1992, Vol 31, Num 10, pp 1612-1621, issn 0003-6935Article

Sputter reduction of oxides by ion bombardment during auger depth profile analysisMITCHELL, D. F; SPROULE, G. I; GRAHAM, M. J et al.Surface and interface analysis. 1990, Vol 15, Num 8, pp 487-497, issn 0142-2421Article

A triangular waveform generator for improving the shape of sputter craters on an ion microprobe mass analyserWOODS, K. N; STRYDOM, H. J; WEGMAN, J. W et al.International journal of mass spectrometry and ion processes. 1984, Vol 62, Num 3, pp 335-340, issn 0168-1176Article

Cone formation on copper by ion-beam sputteringSEN, A. K; GHOSE, D.Journal of materials science letters. 1991, Vol 10, Num 22, pp 1304-1306, issn 0261-8028Article

Proposal for device transplantation using a focused ion beamOHNISHI, T; KAWANAMI, Y; ISHITANI, T et al.Japanese journal of applied physics. 1990, Vol 29, Num 1, pp L188-L190, issn 0021-4922, 2Article

Production of atomic-oxygen negative-ion beam by positive ion-induced sputtering of semiconductive BaTiO₃ ceramicOHYA, K; ISHIDA, K; MORI, I et al.Japanese journal of applied physics. 1984, Vol 23, Num 12, pp 1640-1646, issn 0021-4922Article

Detection of surface atoms by energy analysis of scattered primaries and recoiled secondaries from CsBr under Ar⁺ and Ar²⁺ bombardmentSCHULTZ, J. A; RANJIT KUMAR; RABALAIS, J. W et al.Chemical physics letters. 1983, Vol 100, Num 3, pp 214-218, issn 0009-2614Article

Energy spectra of atoms sputtered by keV light-ion bombardmentFALCONE, G; OLIVA, A.Applied physics. A, Solids and surfaces. 1983, Vol 32, Num 4, pp 201-203, issn 0721-7250Article

Ion sputtering and its application to biomaterialsKOWALSKI, Z. W.Journal of materials science. 1983, Vol 18, Num 9, pp 2531-2543, issn 0022-2461Article

Getting skin deep with ion beamsKEMPFER, L.Materials engineering. 1990, Vol 107, Num 4, pp 29-32, issn 0025-5319, 4 p.Article

Deposition of carbonaceous films using ECR plasma apparatus deposition of colorless, transparent and semiconducting film from methane plasmaFUJITA, T; MATSUMOTO, O.Journal of the Electrochemical Society. 1989, Vol 136, Num 9, pp 2624-2629, issn 0013-4651, 6 p.Article

A compact ion source using a hollow cathode discharge and its application to thin film formationTAKEUCHI, M; YANAGIDA, K; NAGASAKA, H et al.Thin solid films. 1986, Vol 144, Num 2, pp 281-288, issn 0040-6090Article

An XPS study of the angular dependence of preferential sputtering and ion-induced reduction in lead oxide-containing glassesCHRISTIE, A. B; SUTHERLAND, I; WALLS, M et al.Vacuum. 1984, Vol 34, Num 6, pp 659-662, issn 0042-207XArticle