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Magnetron sputtering on 3d components with less accessible areasBENIEN, H; MEYER, M; PSYK, W et al.Metall (Berlin, West). 1991, Vol 45, Num 3, pp 246-249, issn 0026-0746Article

Radio frequency reactive sputter etching: control of etch ratesHORWITZ, C. M.Journal of vacuum science and technology. B: microelectronics processing and phenomena. 1983, Vol 1, Num 3, pp 840-843Article

Propriétés lubrifiantes des films de disulfure de molybdène déposés par pulvérisation haute fréquence. 1. Comparaison des propriétés lubrifiantes pour les films obtenus par la méthode conventionnelle et par la méthode à deux ciblesNISHIMURA, M; NOSAKA, M; SUZUKI, M et al.Junkatsu. 1985, Vol 30, Num 9, pp 671-678, issn 0449-4156Article

Surface structural damage produced in InP (100) by R.F. plasma or sputter depositionDAUTREMONT-SMITH, W. C; FELDMAN, L. C.Thin solid films. 1983, Vol 105, Num 2, pp 187-196, issn 0040-6090Article

Structural and elastic properties of zirconium nitrite-aluminium nitride multilayersMENG, W. J; EESLEY, G. L; SVINARICH, K. A et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 7A, pp 4881-4884, issn 0163-1829Article

Large grain (112) oriented CuInSe2 thin films grown by R.F. sputteringROMEO, N; CANEVARI, V; SBERVEGLIERI, G et al.IEEE photovoltaic specialists conference. 18. 1985, pp 1388-1392Conference Paper

Characterization of radio frequency unbalanced magnetronsWINDOW, B; HARDING, G. L.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 5, pp 3300-3304, issn 0734-2101Article

Radio frequency sputtering process of a polytetrafluoroethylene target and characterization of fluorocarbon polymer filmsMARECHAL, N; PAULEAU, Y.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 3, pp 477-483, issn 0734-2101Article

Validity of self-bias voltage measurements on insulating electrodes in radio-frequency dry etching systemsDE VRIES, C. A. M; VAN DEN HOEK, W. G. M.Journal of applied physics. 1985, Vol 58, Num 5, pp 2074-2076, issn 0021-8979Article

Thin film coating techniques on wires and inner walls of small tubes via cylindrical magnetron sputteringHOSHI, Y; NAOE, M; YAMANAKA, S et al.Electrical engineering in Japan. 1983, Vol 103, Num 1, pp 16-22, issn 0424-7760Article

Radio frequency sputtering ― the significance of power inputHORWITZ, C. M.Journal of vacuum science and technology. A, vacuum, surfaces, and films. 1983, Vol 1, Num 4, pp 1795-1800Article

Intercalation of lithium in r.f.-sputtered niobium oxide film as electrode material for lithium-ion batteriesKUMAGAI, N; TATESHITA, Y; TAKATSUKA, Y et al.Journal of power sources. 1995, Vol 54, Num 2, pp 175-179, issn 0378-7753Conference Paper

Erosion profile of a radio frequency planar magnetron sputtering target with aperture shieldHOLDEMAN, L. B; MORELL, N.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1986, Vol 4, Num 1, pp 137-138, issn 0734-2101Article

Vortex trapping in Pb-alloy Josephson junctions induced by strong sputtering of the base electrodeWADA, M; NAKANO, J; YANAGAWA, F et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1985, Vol 3, Num 2, pp 383-386, issn 0734-2101Article

Buried ion-exchanged optical waveguides with refractive index profiles controlled by rediffusionBABA, K; SHIRAISHI, K; HANAIZUMI, O et al.Applied physics letters. 1984, Vol 45, Num 8, pp 815-817, issn 0003-6951Article

Control of silicon dioxide properties by RF sputteringLEE, M. K; CHANG, C. Y; TZENG, J. S et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 3, pp 658-659, issn 0013-4651Article

Movable target assembly for diode sputtering systemSTONE, C. A; ROZAJ-BRVAR, A; DAVIS, R. F et al.Review of scientific instruments. 1982, Vol 53, Num 11, pp 1754-1756, issn 0034-6748Article

ALIMENTATION ELECTRIQUE POUR LA PULVERISATION DE COUCHES MINCES DANS UN CHAMP HAUTE FREQUENCEZBIKOWSKI A; KOLATOR W.1971; PRACE PRZEMYSL. INST. ELEKTRON.; POLSKA; DA. 1971; VOL. 12; NO 3-4; PP. 119-124Serial Issue

AN INVESTIGATION OF RF SPUTTER ETCHED SILICON SURFACES USING HELIUM ION BACKSCATTER.SACHSE GW; MILLER WE; GROSS CE et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 5; PP. 431-435; BIBL. 14 REF.Article

BELL-JAR RF SPUTTERING SYSTEM.ROCK FC; SMITH CW.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 4; PP. 943-945; BIBL. 9 REF.Conference Paper

SILICON NITRIDE FILMS BY DIRECT RF SPUTTER DEPOSITION.KOMINIAK GJ.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 9; PP. 1271-1273; BIBL. 58 REF.Article

R.F. DIODE SPUTTERING IN PERMANENT-MATCH MODECHRISTENSEN O; OLSEN OH; HOLM NE et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 100; NO 3; PP. 181-191; BIBL. 25 REF.Article

ULTRA-STABLE SYSTEM FOR RF SPUTTERING WITH RF-INDUCED SUBSTRATE BIAS.VOSSEN JL; O'NEILL JJ JR.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 5; PP. 1052-1057; BIBL. 19 REF.Article

ATOMIC ARRANGEMENTS IN SPUTTERED THIN FILMS OF VITREOUS SE-AS WITH 36 TO 50 AT % AS.RECHTIN MD; AVERBACH BL.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 28; NO 1; PP. 283-292; ABS. ALLEM.; BIBL. 26 REF.Article

OXIDATION OF LEAD FILMS BY RF SPUTTER ETCHING IN AN OXYGEN PLASMA.GREINER JH.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 1; PP. 32-37; BIBL. 17 REF.Article

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