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Results 1 to 25 of 4796

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Magnetron sputtering on 3d components with less accessible areasBENIEN, H; MEYER, M; PSYK, W et al.Metall (Berlin, West). 1991, Vol 45, Num 3, pp 246-249, issn 0026-0746Article

Structural and elastic properties of zirconium nitrite-aluminium nitride multilayersMENG, W. J; EESLEY, G. L; SVINARICH, K. A et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 7A, pp 4881-4884, issn 0163-1829Article

Large grain (112) oriented CuInSe2 thin films grown by R.F. sputteringROMEO, N; CANEVARI, V; SBERVEGLIERI, G et al.IEEE photovoltaic specialists conference. 18. 1985, pp 1388-1392Conference Paper

Characterization of radio frequency unbalanced magnetronsWINDOW, B; HARDING, G. L.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 5, pp 3300-3304, issn 0734-2101Article

Radio frequency sputtering process of a polytetrafluoroethylene target and characterization of fluorocarbon polymer filmsMARECHAL, N; PAULEAU, Y.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 3, pp 477-483, issn 0734-2101Article

Study of sputtering mechanism of silicon with hydrogen plasma controlled by magnetic fieldYONG SUN; NISHITANI, R; MIYASATO, T et al.Japanese journal of applied physics. 1994, Vol 33, Num 3A, pp L263-L266, issn 0021-4922, 2Article

Influence of synthesis conditions on optical and electrical properties of CaTiO3:Pr3+ thin films deposited by radiofrequency sputtering for electroluminescent deviceSARAKHA, Ludovic; BEGOU, Thomas; GOULLET, Antoine et al.Surface & coatings technology. 2011, Vol 205, issn 0257-8972, S250-S253, SUP2Conference Paper

Preparation of a BiFeO3/LaNiO3 multiferroic oxide superlattice structure by RF magnetron sputteringLIU, Yen-Ting; CHIU, Shang-Jui; LEE, Hsin-Yi et al.Surface & coatings technology. 2011, Vol 206, Num 7, pp 1666-1672, issn 0257-8972, 7 p.Conference Paper

Characterization of Agx(Ge2Sb2Te5)1- x thin film by RF magnetron sputteringDONG HUN KIM; MYUNG SUN KIM; KIM, Ran-Young et al.Materials characterization. 2007, Vol 58, Num 5, pp 479-484, issn 1044-5803, 6 p.Article

Evolution of the Er environment in a-Si:H under annealing: ion implantation versus co-depositionTESSLER, L. R; PIAMONTEZE, C; MARTINS ALVES, M. C et al.Journal of non-crystalline solids. 2000, Vol 266-69, pp 598-602, issn 0022-3093, 5 p., aConference Paper

Static characteristics of piezoelectric thin film buckling actuatorWAKABAYASHI, S; SAKATA, M; GOTO, H et al.Japanese journal of applied physics. 1996, Vol 35, Num 9B, pp 5012-5014, issn 0021-4922, 1Conference Paper

Sputtering of semiconductive TiO2 thin films and evaluation of their sensitivity to NO gasKUWANO, S; ITOH, Y; HATAKEYAMA, Y et al.Hyomen gijutsu. 1994, Vol 45, Num 8, pp 800-804, issn 0915-1869Article

An introduction to sputtering of magnetic and magneto-optic thin films for data recordingWILLIAMS, E. W.Journal of magnetism and magnetic materials. 1991, Vol 95, Num 3, pp 356-364, issn 0304-8853Article

R.F. diode sputteringLOGAN, J. S.Thin solid films. 1990, Vol 188, Num 2, pp 307-321, issn 0040-6090, 15 p.Article

Preparation of cubic boron nitride films by RF sputteringMIENO, M; YOSHIDA, T.Japanese journal of applied physics. 1990, Vol 29, Num 7, pp L1175-L1177, issn 0021-4922, 2Article

Improved magnetron sputtering systems using ring-type permanent magnetsOHNUMA, T; ISHII, M; KUROKO, T et al.Japanese journal of applied physics. 1989, Vol 28, Num 7, pp 1286-1287, issn 0021-4922, 2 p.Article

Structure dependence in the hydrogenation of acetylene over columnar Pd filmTAMAKI, J; IMANAKA, T.Bulletin of the Chemical Society of Japan. 1988, Vol 61, Num 5, pp 1800-1802, issn 0009-2673Article

Tuning bond contents in B―C―N films via temperature and bias voltage within RF magnetron sputteringCHUNQIANG ZHUANG; JIJUN ZHAO; FUCHAO JIA et al.Surface & coatings technology. 2009, Vol 204, Num 5, pp 713-717, issn 0257-8972, 5 p.Article

Pyroelectric LiTaO3 thin films elaborated by RF magnetron sputtering on RuO2/SiNxCOMBETTE, Philippe; NOUGARET, Laurianne; SORLI, Brice et al.Ferroelectrics (Print). 2007, Vol 353, pp 233-241, issn 0015-0193, 9 p.Conference Paper

Experimental characterization of the deposition of silicon suboxide films in a radiofrequency magnetron reactive sputtering systemVAN HATTUM, E. D; PALMERO, A; AMOLDBIK, W. M et al.Surface & coatings technology. 2004, Vol 188-89, pp 399-403, issn 0257-8972, 5 p.Conference Paper

Diagnostics optiques de plasmas d'aluminium et de titane, pulvérisés par décharge magnétron amplifiée = Optical diagnostics of Al and Ti plasmas, sputtered by amplified magnetron dischargesRICARD, A; KONSTANTINIDIS, S; NOUVELLON, C et al.Le Vide (1995). 2002, Vol 57, Num 305, issn 1266-0167, 467, 602-607 [7 p.]Article

Frequency response in pulsed DC reactive sputtering processesJONSSON, L. B; NYBERG, T; KATARDJIEV, I et al.Thin solid films. 2000, Vol 365, Num 1, pp 43-48, issn 0040-6090Article

Growth model of hydrogenated microcrystalline silicon prepared by RF sputtering method in pure hydrogenFUJISHIRO, H; FURUKAWA, S.Solid state communications. 1990, Vol 73, Num 12, pp 835-838, issn 0038-1098Article

Patterning characteristics of ITO thin filmsINOUE, M; MATSUOKA, T; FUJITA, Y et al.Japanese journal of applied physics. 1989, Vol 28, Num 2, pp 274-278, issn 0021-4922, 5 p., part 1Article

Y2SiO5 coatings fabricated by RF magnetron sputteringMECHNICH, Peter.Surface & coatings technology. 2013, Vol 237, pp 88-94, issn 0257-8972, 7 p.Conference Paper

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