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Atomic structure at the LaSi2-x/Si(100) interfaceQIAN, J. J; WANG, Y. T; HO, J et al.Applied physics letters. 1990, Vol 57, Num 1, pp 43-45, issn 0003-6951Article

Lanthanum silicide formation in thin La-Si multilayer filmsHSU, C. C; HO, J; QIAN, J. J et al.Vacuum. 1990, Vol 41, Num 4-6, pp 1425-1427, issn 0042-207X, 3 p.Conference Paper

Optical anisotropy of InAs submonolayer quantum wells in a (311)GaAs matrixCHEN, Y. H; YANG, Z; WANG, Z. G et al.Applied surface science. 1998, Vol 123-24, pp 343-346, issn 0169-4332Conference Paper

A novel model of new donors in Czochralski-grown siliconQIAN, J. J; WANG, Z. G; WAN, S. K et al.Journal of applied physics. 1990, Vol 68, Num 3, pp 954-957, issn 0021-8979Article

Size quantization effects in InAs self-assembled islands on InP(0 0 1) at the onset of 2D-to-3D transitionLIU, F.-Q; WANG, Z.-G; JU WU et al.Journal of crystal growth. 1999, Vol 197, Num 4, pp 789-793, issn 0022-0248Article

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