Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOsQINGCHUN ZHANG; AGARWAL, Anant K.Physica status solidi. A, Applications and materials science (Print). 2009, Vol 206, Num 10, pp 2431-2456, issn 1862-6300, 26 p.Article

Differentiation of 2'-O- and 3'-O-methylated ribonucleosides by tandem mass spectrometryQINGCHUN ZHANG; YINSHENG WANG.Journal of the American Society for Mass Spectrometry. 2006, Vol 17, Num 8, pp 1096-1099, issn 1044-0305, 4 p.Article

Investigation on small growth pits in 4H silicon carbide epilayersXIANYUN MA; CHANG, Hsuehrong; QINGCHUN ZHANG et al.Journal of crystal growth. 2005, Vol 279, Num 3-4, pp 425-432, issn 0022-0248, 8 p.Article

A synchronization scheme based on the time-frequency block structure for uplink in OFDM cellular radio systemsWEI CAI; GUANGXI ZHU; QINGCHUN ZHANG et al.IEEE Vehicular Technology Conference. 2004, pp 3344-3348, isbn 0-7803-8521-7, 5 p.Conference Paper

Oil and gas assessment of the Kuqa Depression of Tarim Basin in western China by simple fluid flow models of primary and secondary migrations of hydrocarbonsGUANGREN SHI; QINGCHUN ZHANG; YANG, Xin-She et al.Journal of petroleum science & engineering. 2010, Vol 75, Num 1-2, pp 77-90, issn 0920-4105, 14 p.Article

Improved mechanical properties of hydroxyapatite/poly(ε-caprolactone) scaffolds by surface modification of hydroxyapatiteYAN WANG; JING DAI; QINGCHUN ZHANG et al.Applied surface science. 2010, Vol 256, Num 20, pp 6107-6112, issn 0169-4332, 6 p.Article

Effect of crystallographic defects on the reverse performance of 4H-SiC JBS diodesGREKOV, A; QINGCHUN ZHANG; FATIMA, Husna et al.Microelectronics and reliability. 2008, Vol 48, Num 10, pp 1664-1668, issn 0026-2714, 5 p.Article

A quantitative study on the in vitro and in vivo acetylation of high mobility group A1 proteinsQINGCHUN ZHANG; KANGLING ZHANG; YAN ZOU et al.Journal of the American Society for Mass Spectrometry. 2007, Vol 18, Num 9, pp 1569-1578, issn 1044-0305, 10 p.Article

4H-SiC BJTs with current gain of 110QINGCHUN ZHANG; AGARWAL, Anant; BURK, Al et al.Solid-state electronics. 2008, Vol 52, Num 7, pp 1008-1010, issn 0038-1101, 3 p.Article

Characteristics of self-aligned gate-first ge p-and n-channel MOSFETs using CVD HfO₂ gate dielectric and Si surface passivationNAN WU; QINGCHUN ZHANG; BALASUBRAMANIAN, N et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 4, pp 733-741, issn 0018-9383, 9 p.Article

Junction Termination Extension Implementing Drive-in Diffusion of Boron for High-voltage SiC DevicesBOLOTNIKOV, Alexander V; MUZYKOV, Peter G; QINGCHUN ZHANG et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 8, pp 1930-1935, issn 0018-9383, 6 p.Article

Gate-first germanium nMOSFET with CVD HfO₂ gate dielectric and silicon surface passivationNAN WU; QINGCHUN ZHANG; CHAN, D. S. H et al.IEEE electron device letters. 2006, Vol 27, Num 6, pp 479-481, issn 0741-3106, 3 p.Article

Physical phenomena affecting performance and reliability of 4H-SiC bipolar junction transistorsMUZYKOV, Peter G; KENNEDY, Robert M; QINGCHUN ZHANG et al.Microelectronics and reliability. 2009, Vol 49, Num 1, pp 32-37, issn 0026-2714, 6 p.Article

Drive-current enhancement in ge n-channel MOSFET using laser annealing for source/drain activationQINGCHUN ZHANG; JIDONG HUANG; NAN WU et al.IEEE electron device letters. 2006, Vol 27, Num 9, pp 728-730, issn 0741-3106, 3 p.Article

Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectricsSAMANTA, Piyas; TSZ YIN MAN; CHAN, Alain Chun Keung et al.Semiconductor science and technology. 2006, Vol 21, Num 10, pp 1393-1401, issn 0268-1242, 9 p.Article

A novel surface passivation process for HfO₂ Ge MOSFETsNAN WU; QINGCHUN ZHANG; CHUNXIANG ZHU et al.DRC : Device research conference. 2004, pp 19-20, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper

Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers : Silicon carbide devices and technologyHULL, Brett A; SUMAKERIS, Joseph J; O'LOUGHLIN, Michael J et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 8, pp 1864-1870, issn 0018-9383, 7 p.Article

A TaN-HfO₂-Ge pMOSFET with novel SiH₄ surface passivationNAN WU; QINGCHUN ZHANG; ZHU, Chunxiang et al.IEEE electron device letters. 2004, Vol 25, Num 9, pp 631-633, issn 0741-3106, 3 p.Article

Effects of microwave annealing on crystalline quality of ion-implanted SiC epitaxial layersMAHADIK, Nadeemullah A; QADRI, Syed B; SUNDARESAN, Siddarth G et al.Surface & coatings technology. 2009, Vol 203, Num 17-18, pp 2625-2627, issn 0257-8972, 3 p.Conference Paper

1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70JONAS, Charlotte; CAPELL, Craig; BURK, Al et al.Journal of electronic materials. 2008, Vol 37, Num 5, pp 662-665, issn 0361-5235, 4 p.Article