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Inverse-Quantum-Engineering: A New Methodology for Designing Quantum Cascade LasersWALDMUELLER, Ines; WANKE, Michael C; LERTTAMRAB, Maytee et al.IEEE journal of quantum electronics. 2010, Vol 46, Num 9-10, pp 1414-1420, issn 0018-9197, 7 p.Article

On the simulation by a magnetic field of the quantized states in a quantum-well laser diodeGRADO-CAFFARO, M. A; GRADO-CAFFARO, M.Optik (Stuttgart). 2010, Vol 121, Num 18, pp 1717-1718, issn 0030-4026, 2 p.Article

Photoluminescence measurements in Be-δ-doped back-gated quantum wellYAMAGUCHI, M; NOMURA, S; SATO, D et al.Surface science. 2005, Vol 583, Num 1, pp 94-99, issn 0039-6028, 6 p.Article

Lateral confinement of carriers in ultrathin semiconductor quantum wellsSHTINKOV, N; DESJARDINS, P; MASUT, R. A et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 459-462, issn 0959-8324, 4 p.Conference Paper

High temperature characteristics of 1.55 μm InGaAs/InGaAsP strain-compensated multiple quantum well lasersMA CHUNSHENG; GUO WENBIN; LIU SHIYONG et al.SPIE proceedings series. 2001, pp 173-177, isbn 0-8194-4341-7Conference Paper

Enhancement of optical gain in Li:CdZnO/ZnMgO quantum well lasersHEE CHANGE JEON; SEUNG JOO LEE; PARK, Seoung-Hwan et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2652-2654, issn 1386-9477, 3 p.Conference Paper

A comparison of optoelectronic properties of lattice-matched and strained quantum-well and quantum-wire structuresVURGAFTMAN, I; HINCKLEY, J. M; SINGH, J et al.IEEE journal of quantum electronics. 1994, Vol 30, Num 1, pp 75-84, issn 0018-9197Article

Microstructure analysis in strained-InGaN/GaN multiple quantum wellsHUAPING LEI; JUN CHEN; XUNYA JIANG et al.Microelectronics journal. 2009, Vol 40, Num 2, pp 342-345, issn 0959-8324, 4 p.Conference Paper

Non-equilibrium analysis of the two-color operation in semiconductor quantum-well lasersBÄUMNER, Ada; KOCH, Stephan W; MOLONEY, Jerome V et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 4, pp 843-846, issn 0370-1972, 4 p.Article

Microscopic theory for the intersubband optical response of strained quantum well laser mediaPEREIRA, M. F; HEALY, S; O'REILLY, E. P et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 240-246, issn 0277-786X, isbn 0-8194-5810-4, 1Vol, 7 p.Conference Paper

High-temperature stability of lasing wavelength in GaAsSb/GaAs double quantum wells lasersYU, Hsin-Chieh; WAN, Cheng-Tien; SU, Yan-Kuin et al.Proceedings of SPIE, the International Society for Optical Engineering. 2010, Vol 7598, issn 0277-786X, isbn 0-8194-7994-2 978-0-8194-7994-5, 1Vol, 759818.1-759818.11Conference Paper

Quantum capture area in layered quantum well structuresSHULIKA, Oleksiy V; SAFONOV, Ivan M; SUKHOIVANOV, Igor A et al.Microelectronics journal. 2005, Vol 36, Num 3-6, pp 350-355, issn 0959-8324, 6 p.Conference Paper

An Electrooptic Multiple-Quantum-Well Device for Image ProcessingVIANNA, Celso J; DE SOUZA, Eunézio Antônio.IEEE journal of quantum electronics. 2009, Vol 45, Num 5-6, pp 603-608, issn 0018-9197, 6 p.Article

Numerical analysis of an optoelectronic integrated device composed of coupled periodic MQW phototransistor and strained-QW laser diodeDARABI, E; AHMADI, V; MIRABBASZADEH, K et al.Solid-state electronics. 2006, Vol 50, Num 3, pp 473-479, issn 0038-1101, 7 p.Article

Orbital mismatch in semiconductor quantum wellsCADE, N. A.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 20, pp 3885-3893, issn 0022-3719Article

Gain and intervalence band adsorption in quantum-well lasersASADA, M; KAMEYAMA, A; SUEMATSU, Y et al.IEEE journal of quantum electronics. 1984, Vol 20, Num 7, pp 745-753, issn 0018-9197Article

Effect of ion implantation on quantum well infrared photodetectorsHATEFI-KARGAN, N; STEENSON, D. P; SHERLIKER, B et al.Infrared physics & technology. 2007, Vol 50, Num 2-3, pp 106-112, issn 1350-4495, 7 p.Conference Paper

Formation dynamics of neutral and negatively charged excitons in double barrier resonant tunnelling structuresVERCIK, A; GALVAO GOBATO, Y; BRASIL, M. J. S. P et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 659-661, issn 0959-8324, 3 p.Conference Paper

Influence of nitrogen on carrier localization in InGaAsN/GaAs single quantum wellsMISIEWICZ, J; SITAREK, P; RYCZKO, K et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 737-739, issn 0959-8324, 3 p.Conference Paper

High device yield and performance of InGaAsP MQW DFB lasers with absorptive gratingPARK, S. S; PARK, S. W; YU, J. S et al.Electronics Letters. 2007, Vol 43, Num 20, pp 1095-1096, issn 0013-5194, 2 p.Article

40°C < T < 95° C mode-hop-free operation of uncooled AIGalnAs-MQW discrete-mode laser diode with emission at X = 1.3 μmPHELAN, R; KELLY, B; O'CARROLL, J et al.Electronics letters. 2009, Vol 45, Num 1, pp 43-45, issn 0013-5194, 3 p.Article

Nitride LEDs based on flat and wrinkled quantum wellsCABALU, J. S; THOMIDIS, C; FRIEL, I et al.SPIE proceedings series. 2005, pp 185-196, isbn 0-8194-5706-X, 12 p.Conference Paper

Effect of state filling on the modulation response and the threshold current of quantum well lasersZHAO, B; CHEN, T. R; YARIV, A et al.Applied physics letters. 1992, Vol 60, Num 16, pp 1930-1932, issn 0003-6951Article

Gain compression in tensile-strained 1.55 μm quantum well lasers operating a first and second quantized statesWU, T. C; KAN, S. C; VASSILOVSKI, D et al.Applied physics letters. 1992, Vol 60, Num 15, pp 1794-1796, issn 0003-6951Article

High-power conversion efficiency in a strained InGaAs/AlGaAs quantum well laserBOUR, D. P; EVANS, G. A; GILBERT, D. B et al.Journal of applied physics. 1989, Vol 65, Num 9, pp 3340-3343, issn 0021-8979Article

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