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Dependence of the electronic parameters on the InyGa1-yAs quantum well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wellsLEE, D. U; KIM, T. W; YOO, K. H et al.Applied surface science. 2005, Vol 240, Num 1-4, pp 375-380, issn 0169-4332, 6 p.Article

Piezoelectric field effects on electron density in a δ-doped AlGaAs/InyGa1-yAs/GaAs pseudomorphic hemtBOUZAÏENE, L; REKAYA, S; SGHAIER, H et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 80, Num 2, pp 295-299, issn 0947-8396, 5 p.Article

Subband structure and band bending in symmetric modulation-doped double quantum wellsUNGAN, F; OZTURK, E; ERGUN, Y et al.EPJ. Applied physics (Print). 2005, Vol 29, Num 1, pp 27-31, issn 1286-0042, 5 p.Article

Induced transparency by intersubband plasmon coupling in a quantum wellJIANZHONG LI; NING, C. Z.Physical review letters. 2004, Vol 93, Num 8, pp 087402.1-087402.4, issn 0031-9007Article

Large change in biaxial anisotropy of in-plane hole dispersion in a (110) quantum well under [110] uniaxial stressKAJIKAWA, Y; NISHIMOTO, N; HIGUCHI, Y et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 20, pp 205320.1-205320.9, issn 1098-0121Article

Modification of electron-hole excitations for a quantum well embedded in an asymmetric dielectric structureVAN TRONG NGUYEN; MAHLER, Günter.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 4, pp 045306.1-045306.6, issn 1098-0121Article

Binding energies of excitons in II-VI compound-semiconductor based quantum well structuresSENGER, R. T; BAJAJ, K. K.Physica status solidi. B. Basic research. 2004, Vol 241, Num 8, pp 1896-1900, issn 0370-1972, 5 p.Article

Polaron signatures in the line shape of semiconductor intersubband transitions: Quantum kinetics of the electron-phonon interactionBUTSCHER, S; FÖRSTNER, J; WALDMÜLLER, I et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 11, pp R49-R51, issn 0370-1972Article

Slow light using excitonic population oscillationCHANG, Shu-Wei; CHUANG, Shun-Lien; KU, Pei-Cheng et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 23, pp 235333.1-235333.11, issn 1098-0121Article

Influence of the spatially dependent effective mass on bound polarons in finite parabolic quantum wellsZHAO, F. Q; LIANG, X. X; BAN, S. L et al.The European physical journal. B, Condensed matter physics. 2003, Vol 33, Num 1, pp 3-8, issn 1434-6028, 6 p.Article

Spin splitting and interband photogalvanic effect in quantum wellsGOLUB, L. E.SPIE proceedings series. 2003, pp 428-431, isbn 0-8194-4824-9, 4 p.Conference Paper

Spin-selective positioning of wave functions in magnetically tunable symmetric triple quantum wellsLEE, S; DOBROWOLSKA, M; FURDYNA, J. K et al.Optical materials (Amsterdam). 2003, Vol 23, Num 1-2, pp 79-82, issn 0925-3467, 4 p.Conference Paper

Electronic states in quantum rings: electric field and eccentricity effectsLAVENERE-WANDERLEY, L. A; BRUNO-ALFONSO, A; LATGE, A et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 2, pp 259-270, issn 0953-8984Article

Influence of well-width fluctuations on the binding energy of excitons, charged excitons, and biexcitons in GaAs-based quantum wellsFILINOV, A. V; RIVA, C; PEELERS, F. M et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 3, pp 035323.1-035323.13, issn 1098-0121Article

A self-consistent investigation of the semimetal-semiconductor transition in InAs/GaSb quantum wells under external electric fieldsLAPUSHKIN, I; ZAKHAROVA, A; YEN, S. T et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 26, pp 4677-4684, issn 0953-8984, 8 p.Article

Hole mixing and strain effects in the conduction intersubband transitions of undoped quantum wellsSADEGHI, S. M; WEI LI.IEEE journal of quantum electronics. 2004, Vol 40, Num 4, pp 343-348, issn 0018-9197, 6 p.Article

Influence of interface roughness scattering on electronic magnetotransport in a quantum wellYISONG ZHENG; TIANQUAN LÜ; CHENGXIANG ZHANG et al.Semiconductor science and technology. 2004, Vol 19, Num 6, pp 783-786, issn 0268-1242, 4 p.Article

Lateral confinement and band mixing in ultrathin semiconductor quantum wells with steplike interfacesSHTINKOV, N; DESJARDINS, P; MASUT, R. A et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 15, pp 155302.1-155302.11, issn 1098-0121Article

Temperature dependence of Dyakonov-Perel spin relaxation in zinc-blende semiconductor quantum structuresKAINZ, J; RÖSSLER, U; WINKLER, R et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 19, pp 195322.1-195322.9, issn 1098-0121, 1Article

Optical control of spins in semiconductors : Interface between photonics and magnetismBARLEY, R. T; KARIMOV, O. Z; HENINI, M et al.Journal of physics. D, Applied physics (Print). 2003, Vol 36, Num 18, pp 2198-2203, issn 0022-3727, 6 p.Article

A carbon nanotube cross structure as a nanoscale quantum deviceNOJEH, Alireza; LAKATOS, Gregory W; SHU PENG et al.Nano letters (Print). 2003, Vol 3, Num 9, pp 1187-1190, issn 1530-6984, 4 p.Article

Impurity induced resonant states in modulation doped heterostructuresODNOBLYUDOV, M. A; BLOM, A; YASSIEVICH, I. N et al.SPIE proceedings series. 2003, pp 409-412, isbn 0-8194-4824-9, 4 p.Conference Paper

Resonant acceptor states in delta-doped SiGe nanostructuresPROKOFIEV, A. A; ODNOBLYUDOV, M. A; YASSIEVICH, I. N et al.SPIE proceedings series. 2003, pp 413-416, isbn 0-8194-4824-9, 4 p.Conference Paper

Quantum diffusion of dipole-oriented indirect excitons in coupled quantum wellsIVANOV, A. L.Europhysics letters (Print). 2002, Vol 59, Num 4, pp 586-591, issn 0295-5075Article

Interface-related effects on confined excitons in GaAs/AlxGa1-xAs single quantum wellsFERREIRA, E. C; DA COSTA, J. A. P; FREIRE, J. A. K et al.Applied surface science. 2002, Vol 190, Num 1-4, pp 191-194, issn 0169-4332Conference Paper

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