Quantum stability of ultrathin metal overlayers on semiconductor substratesZHENYU ZHANG.Surface science. 2004, Vol 571, Num 1-3, pp 1-4, issn 0039-6028, 4 p.Article

Role of the spin-orbit interaction in elastic scattering of electrons in quantum wellsHUANG, H. C; VOSKOBOYNIKOV, O; LEE, C. P et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 687-690, issn 0959-8324, 4 p.Conference Paper

Calculations of the inter-subband scattering rates of electrons in GaAs/AlGaAs quantum wellsLEE, H. C; SUN, K. W.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 671-673, issn 0959-8324, 3 p.Conference Paper

DC field response of hot carriers under circular polarized intense microwave fields in semiconductors limited to two-dimensionISHIDA, Norihisa.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 691-693, issn 0959-8324, 3 p.Conference Paper

Inverse-Quantum-Engineering: A New Methodology for Designing Quantum Cascade LasersWALDMUELLER, Ines; WANKE, Michael C; LERTTAMRAB, Maytee et al.IEEE journal of quantum electronics. 2010, Vol 46, Num 9-10, pp 1414-1420, issn 0018-9197, 7 p.Article

Transformations between symmetric sets of quantum statesDUNJKO, Vedran; ANDERSSON, Erika.Journal of physics. A, Mathematical and theoretical (Print). 2012, Vol 45, Num 36, issn 1751-8113, 365304.1-365304.21Article

Polarization qubit phase gate between two far-infrared pulses in three-coupled quantum wellsXIANGYING HAO; SI, Liu-Gang; CHUNLING DING et al.Journal of the Optical Society of America. B, Optical physics (Print). 2010, Vol 27, Num 9, pp 1792-1798, issn 0740-3224, 7 p.Article

A new type of quantum wells: stacking faults in silicon carbideIWATA, Hisaomi; LINDEFELT, Ulf; ÖBERG, Sven et al.Microelectronics journal. 2003, Vol 34, Num 5-8, pp 371-374, issn 0959-8324, 4 p.Conference Paper

Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structuresCHAISAKUL, Papichaya; MARRIS-MORINI, Delphine; ISELLA, Giovanni et al.Optics letters. 2010, Vol 35, Num 17, pp 2913-2915, issn 0146-9592, 3 p.Article

Two-electron absorption in a biased quantum wellDAI, J; RAIKH, M. E; SHAHBAZYAN, T. V et al.Physica. E, low-dimentional systems and nanostructures. 2006, Vol 34, Num 1-2, pp 311-314, issn 1386-9477, 4 p.Conference Paper

Hybridization schemes for Ag films on V(100)KRALJ, Marko.Surface science. 2005, Vol 599, Num 1-3, pp 150-159, issn 0039-6028, 10 p.Article

Photoemission from 2D metallic quantum wellsPERVAN, Petar; MILUN, Milorad.Surface science. 2009, Vol 603, Num 10-12, pp 1378-1388, issn 0039-6028, 11 p.Article

Optical manifestation of magnetoexcitons in near-surface quantum wellsFLORES-DESIRENA, B; PEREZ-RODRIGUEZ, F.Applied surface science. 2003, Vol 212-13, pp 127-130, issn 0169-4332, 4 p.Conference Paper

Coherence properties of a radiating electron-hole condensateOLAYA-CASTRO, A; QUIROGA, L; TEJEDOR, C et al.Solid state communications. 2003, Vol 127, Num 2, pp 141-146, issn 0038-1098, 6 p.Article

The quantized acoustoelectric current for different lengths of a quasi-one-dimensional channelCHEN, S. W; GUO, H. Z; ZHANG, W et al.Solid state communications. 2009, Vol 149, Num 43-44, pp 1909-1913, issn 0038-1098, 5 p.Article

Hartree-Fock studies of quantum dots and the 0.7 anomalySLOGGETT, C; SUSHKOV, O. P.Surface science. 2007, Vol 601, Num 24, pp 5788-5793, issn 0039-6028, 6 p.Conference Paper

Photoluminescence measurements in Be-δ-doped back-gated quantum wellYAMAGUCHI, M; NOMURA, S; SATO, D et al.Surface science. 2005, Vol 583, Num 1, pp 94-99, issn 0039-6028, 6 p.Article

Enhanced index and negative dispersion without absorption in semiconductor quantum wellsZHIPING WANG; SHENGLAI ZHEN; XUQIANG WU et al.Journal of luminescence. 2013, Vol 143, pp 605-610, issn 0022-2313, 6 p.Article

Transient two-photon absorption property in a n-doped semiconductor quantum wellZHIPING WANG.Physica. E, low-dimentional systems and nanostructures. 2011, Vol 43, Num 7, pp 1329-1333, issn 1386-9477, 5 p.Article

Inhibition and enhancement of two-photon absorption in a four-level inverted-Y semiconductor quantum well systemZHIPING WANG; BENLI YU; FENG XU et al.Physica. E, low-dimentional systems and nanostructures. 2012, Vol 44, Num 7-8, pp 1267-1271, issn 1386-9477, 5 p.Article

Non-equilibrium analysis of the two-color operation in semiconductor quantum-well lasersBÄUMNER, Ada; KOCH, Stephan W; MOLONEY, Jerome V et al.Physica status solidi. B. Basic research. 2011, Vol 248, Num 4, pp 843-846, issn 0370-1972, 4 p.Article

Photoluminescence peculiarities in InGaAs/GaAs structures with different InAs quantum dot densitiesTORCHYNSKA, T. V.Journal of luminescence. 2013, Vol 136, pp 75-79, issn 0022-2313, 5 p.Article

Electron-phonon interactions in intersubband laser heterostructuresKISIN, Mikhail V; DUTTA, Mitra; STROSCIO, Michael A et al.International journal of high speed electronics and systems. 2002, Vol 12, Num 4, pp 939-968, 30 p.Article

Effect of In-segregation on subbands in GaInNAs/GaAs quantum wells emission around 1.3 and 1.55 micronDIXIT, V; LIU, H. F; XIANG, N et al.Optical and quantum electronics. 2006, Vol 38, Num 12-14, pp 963-972, issn 0306-8919, 10 p.Conference Paper

Analytical solution of the finite quantum square-well problemBLÜMEL, R.Journal of physics. A, mathematical and general. 2005, Vol 38, Num 42, pp L673-L678, issn 0305-4470Article