ETUDE DE L'EMISSION PHOTOELECTRIQUE DE L'ARSENIC AMORPHERAISIN C; ROBIN J.1973; C.R. ACAD. SCI., B; FR.; DA. 1973; VOL. 276; NO 5; PP. 195-198; BIBL. 12 REF.Serial Issue

COMPARISON OF OPTICAL PROPERTIES AND BAND STRUCTURES OF SNSE₂ AND SNS₂.RAISIN C; BERTRAND Y; ROBIN J et al.1977; SOLID. STATE COMMUNIC.; G.B.; DA. 1977; VOL. 24; NO 4; PP. 353-356; BIBL. 8 REF.Article

ETAT ELECTRONIQUE DE L'ARSENIC AMORPHE.RAISIN C; LEVEQUE G; ROBIN KANDARE S et al.1976; J. PHYS. C; G.B.; DA. 1976; VOL. 9; NO 15; PP. 2887-2897; ABS. ANGL.; BIBL. 23 REF.Article

PROPRIETES ELECTRIQUES DES COUCHES MINCES DE GASB AMORPHE.DE CHELLE F; RAISIN C; ROBIN KANDARE S et al.1977; THIN SOLID FILMS; NETHERL.; DA. 1977; VOL. 46; NO 2; PP. 187-191; ABS. ANGL.; BIBL. 8 REF.Article

OPTICAL AND ELECTRO-OPTICAL BEHAVIOUR OF POLISHED AND ETCHED ZINC SELENIDE SINGLE CRYSTALSGAUTRON J; RAISIN C; LEMASSON P et al.1982; JOURNAL OF PHYSICS D: APPPLIED PHYSICS; ISSN 0022-3727; GBR; DA. 1982; VOL. 15; NO 1; PP. 153-161; BIBL. 21 REF.Article

OPTICAL PROPERTIES OF SNSE₂ AND SNS₂BERTRAND Y; LEVEQUE G; RAISIN C et al.1979; J. PHYS. C; GBR; DA. 1979; VOL. 12; NO 14; PP. 2907-2916; BIBL. 30 REF.Article

REFLECTIVITY OF SN(SE_1-XS_X)₂ MIXED CRYSTALSBENJELLOUN J; BERTRAND Y; RAISIN C et al.1981; SOLID STATES COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 8; PP. 805-808; BIBL. 13 REF.Article

Formation and properties of MBE grown AlSb-GaSb(100) interfaces = Formation et propriétés des interfaces AlSb-GaSb(100) préparées par épitaxie de faisceau moléculaireRAISIN, C; TEGMOUSSE, H; LASSABATERE, L et al.Journal de physique. Colloques. 1987, Vol 48, Num 5, pp C5.77-C5.79, issn 0449-1947Conference Paper

UPS AND XPS SPECTRA OF CDF₂ AND SRF₂ AND INTERPRETATION OF OPTICAL PROPERTIES OF THESE COMPOUNDSRAISIN C; BERGER JM; ROBIN KANDARE S et al.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 9; PP. 1835-1844; BIBL. 15 REF.Article

Optical transitions of GaSb-AlSb superlattice in the 2-5 eV rangeDA SILVA, F. W. O; ANCE, C; RAISIN, C et al.Journal of applied physics. 1991, Vol 70, Num 7, pp 4007-4008, issn 0021-8979Article

Reflectivity of GaSb-AlSb quantum-well structures in the range 2-5 eVANCE, C; RAISIN, C; FERRATON, J. P et al.Journal of applied physics. 1989, Vol 66, Num 7, pp 3088-3091, issn 0021-8979Article

Dislocations d'interface et défauts de volume dans l'hétérostructure GaSb/GaAsROCHER, A; DA SILVA, F. W. O; RAISIN, C et al.Revue de physique appliquée. 1990, Vol 25, Num 9, pp 957-961, issn 0035-1687Article

Oxidation study by Auger electron spectroscopy and electron energy-loss spectroscopy of GaSb (001) surfaces grown by molecular-beam epitaxyRAISIN, C; DA SILVA, F. W. O; LASSABATERE, L et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 1, pp 68-74, issn 0734-211X, 7 p.Article

Etude des propriétés électriques et physico-chimiques des couches minces de SiO₂ en cours de croissance = Study of electrical and structural properties of ultrathin films of SiO₂ during growthRAISIN, C; VIEUJOT-TESTEMALE, E; BONNY, R et al.Revue de physique appliquée. 1984, Vol 19, Num 12, pp 997-1003, issn 0035-1687Article

Auger and electron energy loss spectroscopies study of the oxidation of AlSb(001) thin films grown by molecular beam epitaxyDA SILVA, F. W. O; RAISIN, C; NOUAOURA, M et al.Thin solid films. 1991, Vol 200, Num 1, pp 33-48, issn 0040-6090Article

Study of GaSb(001) substrate chemical etching for molecular-beam epitaxyDA SILVA, F. W. O; SILGA, M; RAISIN, C et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1990, Vol 8, Num 1, pp 75-78, issn 0734-211X, 4 p.Article

Interactions entre les cellules confinées et les matrices de gel = Interactions between confined cells and gel matricesBIENAIME, C; RAISIN, C; RIBEIRO, T et al.Vegetal biopole. Research programs of 1996-1997Biopôle végétal. Programmes de recherches 1996-1997. 1997, pp 285-292Conference Paper

Nonparabolic behavior of GaSb-AlSb quantum wells under hydrostatic pressureLEFEBVRE, P; GIL, B; ALLEGRE, J et al.Physical review. B, Condensed matter. 1987, Vol 35, Num 3, pp 1230-1235, issn 0163-1829Article

Contribution of the contamination of deionized water by bacteria to the adsorption of carbon on Si and GaSbDE PAIVA, E. T; DA SILVA, F. W. O; RAISIN, C et al.Journal of materials science. 1992, Vol 27, Num 6, pp 1585-1588, issn 0022-2461Article

Optical investigations of a GaSb-AlSb single quantum wellRAISIN, C; LASSABATERE, L; ALLIBERT, C et al.Solid state communications. 1987, Vol 61, Num 1, pp 17-19, issn 0038-1098Article

Sur l'élaboration par jets moléculaires et les propriétés optiques d'hétérojonctions GaAlSb/GaSb = On elaboration by molecular beams and optical properties of GaAlSb/GaSb heterojunctionsRAISIN, C; BABAKOR SAGUINTAAH; TEGMOUSSE, H et al.Annales des télécommunications. 1986, Vol 41, Num 1-2, pp 50-58, issn 0003-4347Article

Work function measurements during growth of ultra thin films of SiO₂ on characterized silicon surfacesRAISIN, C; VIEUJOT-TESTEMALE, E; BEN BRAHIM, A et al.Solid-state electronics. 1984, Vol 27, Num 5, pp 413-417, issn 0038-1101Article