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kw.\*:("RANDOM ACCESS MEMORY(RAM)")

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Results 1 to 25 of 1851

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THE EFFECT OF PARASITIC CAPACITANCES ON THE CIRCUIT SPEED OF GAAS MESFET RING OSCILLATORSCHANG CTM; NAMORDI MR; WHITE WA et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1805-1809; BIBL. 8 REF.Article

A REVIEW OF RAM TESTING METHODOLOGICSCORSI A; MORANDI C.1983; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1983; VOL. 14; NO 2; PP. 55-71; BIBL. 29 REF.Article

MINIATURIZATION DEGREE OF DYNAMIC MOS RAM CELLS WITH READOUT SIGNAL GAINTSUCHIYA T; NAKAJIMA S.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1713-1717; BIBL. 6 REF.Article

ENHANCED-PERFORMANCE 4 K X 1 HIGH-SPEED SRAM USING OPTICALLY DEFINED SUBMICROMETER DEVICES IN SELECTED CIRCUITSCHATTERJEE PK; SHAH AH; YUNG TAO LIN et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 700-706; BIBL. 21 REF.Article

AN MO GATE 4K STATIC MOS RAMISHIKAWA H; YAMAMOTO M; TOKUNAGA H et al.1980; IEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1586-1590; BIBL. 11 REF.Article

ERROR-CORRECTION TECHNIQUE FOR RANDOM-ACCESS MEMORIESOSMAN FI.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 5; PP. 877-881; BIBL. 3 REF.Article

A 1-MBIT FULL-WAFER MOS RAMEGAWA Y; WADA T; OHMORI Y et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1612-1621; BIBL. 12 REF.Article

A 5-V ONLY 16-KBIT STACKED-CAPACITOR MOS RAMKOYANAGI M; SAKAI Y; ISHIHARA M et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1596-1601; BIBL. 11 REF.Article

EVOLUTION OF M.O.S. TECHNOLOGY1979; NEW ELECTRON.; GBR; DA. 1979; VOL. 12; NO 17; PP. 28-34; (4 P.)Article

SIMPLIFIED R.A.M. TIMING SEQUENCE GENERATION.NUTBURN P.1978; NEW ELECTRON.; GBR; DA. 1978; VOL. 11; NO 12; PP. 46-48 (2P.)Article

ONE CHIP CONTROLLERS AND 4-K STATIC RAMS STAR.ALTMAN L; CAPECE RP.1977; ELECTRONICS; U.S.A.; DA. 1977; VOL. 50; NO 22; PP. 96-102 (5P.)Article

SINGLE 5-V, 64K RAM WITH SCALED-DOWN MOS STRUCTUREMASUDA H; HORI R; KAMIGAKI Y et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1607-1612; BIBL. 11 REF.Article

KEEP THE MEMORY INTERFACE SIMPLE BETWEEN DYNAMIC RAMS AND A MU P. USE THE RIGHT TIMING AND REFRESH, AND YOU WON'T HAVE TO TRADE OFF MUCH PERFORMANCE FOR COST.FIELLAND G; OISHI K.1978; ELECTRON. DESIGN; U.S.A.; DA. 1978; VOL. 26; NO 9; PP. 84-92Article

DYNAMIC MEMORIES OFFER ADVANTAGES.WINFIELD J.1977; ELECTRON. DESIGN; U.S.A.; DA. 1977; VOL. 25; NO 14; PP. 66-70; BIBL. 2 REF.Article

HOT-ELECTRON DESIGN CONSIDERATIONS FOR HIGH-DENSITY RAM CHIPSTROUTMAN RR; HARROUN TV; COTTRELL PE et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1629-1640; BIBL. 14 REF.Article

THE 64 K DYNAMIC R.A.M.YOUNG S.1980; NEW ELECTRON.; GBR; DA. 1980; VOL. 13; NO 14; PP. 47-48Article

A 1-MBIT FULL-WAFER MOS RAMEGAWA Y; WADA T; OHMORI Y et al.1980; IEEE J. SOLID. STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 677-686; BIBL. 12 REF.Article

A 1-MU M MO-POLY 64-KBIT MOS RAMYANAGAWA F; KIUCHI K; HOSOYA T et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1602-1606; BIBL. 14 REF.Article

SELECTING TEST PATTERNS FOR 4K RAMSSOHL WE.1977; I.E.E.E. TRANS. MANUFG TECHNOL.; USA; DA. 1977; VOL. 6; NO 3; PP. 51-60Article

TRENDS BEI HOCHINTEGRIERTEN DYNAMISCHEN RAMSS = LES TENDANCES ACTUELLES DES MEMOIRES RAM A HAUTE INTEGRATIONPOSA JG.1980; ELEKTRONIK (MUENCH.); ISSN 0013-5658; DEU; DA. 1980; VOL. 29; NO 22; PP. 87-94; BIBL. 3 REF.Article

FOCUS ON SEMICONDUCTOR RAMS.1977; ELECTRON. DESIGN; U.S.A.; DA. 1977; VOL. 25; NO 17; PP. 56-62Article

A RADIATION HARDENED 256 X 4 BULK CMOS RAMNAPOLI LS; SMELTZER RK; DONNELLY R et al.1982; RCA REVIEW; ISSN 0033-6831; USA; DA. 1982; VOL. 43; NO 3; PP. 458-463; BIBL. 4 REF.Article

EINSATZ VON DYNAMISCHEN RAMS IN ARBEITSSPEICHERN = MISE EN OEUVRE DES MEMOIRES DYNAMIQUES A ACCES DIRECTWITTGRUBER F; HEINZERLING H.1980; ELEKTRONIK; DEU; DA. 1980; VOL. 29; NO 2; PP. 56-58; BIBL. 11 REF.Article

16-K STATIC RAM TAKES NEW ROUTE TO HIGH SPEEDSUD R; HARDEE KC.1980; ELECTRONICS; ISSN 0013-5070; USA; DA. 1980; VOL. 53; NO 20; PP. 117-123Article

HITH SPEED 4 K STATIC RAM USING DSA MOSTSTAKAHASHI K; IKEJIMA H; MORIMOTO M et al.1978; N.E.C. RES. DEVELOP.; JPN; DA. 1978; NO 51; PP. 16-21; BIBL. 6 REF.Article

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