THE EFFECT OF PARASITIC CAPACITANCES ON THE CIRCUIT SPEED OF GAAS MESFET RING OSCILLATORSCHANG CTM; NAMORDI MR; WHITE WA et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1805-1809; BIBL. 8 REF.Article

A REVIEW OF RAM TESTING METHODOLOGICSCORSI A; MORANDI C.1983; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1983; VOL. 14; NO 2; PP. 55-71; BIBL. 29 REF.Article

MINIATURIZATION DEGREE OF DYNAMIC MOS RAM CELLS WITH READOUT SIGNAL GAINTSUCHIYA T; NAKAJIMA S.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1713-1717; BIBL. 6 REF.Article

ENHANCED-PERFORMANCE 4 K X 1 HIGH-SPEED SRAM USING OPTICALLY DEFINED SUBMICROMETER DEVICES IN SELECTED CIRCUITSCHATTERJEE PK; SHAH AH; YUNG TAO LIN et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 700-706; BIBL. 21 REF.Article

AN MO GATE 4K STATIC MOS RAMISHIKAWA H; YAMAMOTO M; TOKUNAGA H et al.1980; IEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1586-1590; BIBL. 11 REF.Article

SINGLE 5-V, 64K RAM WITH SCALED-DOWN MOS STRUCTUREMASUDA H; HORI R; KAMIGAKI Y et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1607-1612; BIBL. 11 REF.Article

KEEP THE MEMORY INTERFACE SIMPLE BETWEEN DYNAMIC RAMS AND A MU P. USE THE RIGHT TIMING AND REFRESH, AND YOU WON'T HAVE TO TRADE OFF MUCH PERFORMANCE FOR COST.FIELLAND G; OISHI K.1978; ELECTRON. DESIGN; U.S.A.; DA. 1978; VOL. 26; NO 9; PP. 84-92Article

DYNAMIC MEMORIES OFFER ADVANTAGES.WINFIELD J.1977; ELECTRON. DESIGN; U.S.A.; DA. 1977; VOL. 25; NO 14; PP. 66-70; BIBL. 2 REF.Article

TRENDS BEI HOCHINTEGRIERTEN DYNAMISCHEN RAMSS = LES TENDANCES ACTUELLES DES MEMOIRES RAM A HAUTE INTEGRATIONPOSA JG.1980; ELEKTRONIK (MUENCH.); ISSN 0013-5658; DEU; DA. 1980; VOL. 29; NO 22; PP. 87-94; BIBL. 3 REF.Article

FOCUS ON SEMICONDUCTOR RAMS.1977; ELECTRON. DESIGN; U.S.A.; DA. 1977; VOL. 25; NO 17; PP. 56-62Article

A RADIATION HARDENED 256 X 4 BULK CMOS RAMNAPOLI LS; SMELTZER RK; DONNELLY R et al.1982; RCA REVIEW; ISSN 0033-6831; USA; DA. 1982; VOL. 43; NO 3; PP. 458-463; BIBL. 4 REF.Article

EINSATZ VON DYNAMISCHEN RAMS IN ARBEITSSPEICHERN = MISE EN OEUVRE DES MEMOIRES DYNAMIQUES A ACCES DIRECTWITTGRUBER F; HEINZERLING H.1980; ELEKTRONIK; DEU; DA. 1980; VOL. 29; NO 2; PP. 56-58; BIBL. 11 REF.Article

16-K STATIC RAM TAKES NEW ROUTE TO HIGH SPEEDSUD R; HARDEE KC.1980; ELECTRONICS; ISSN 0013-5070; USA; DA. 1980; VOL. 53; NO 20; PP. 117-123Article

HITH SPEED 4 K STATIC RAM USING DSA MOSTSTAKAHASHI K; IKEJIMA H; MORIMOTO M et al.1978; N.E.C. RES. DEVELOP.; JPN; DA. 1978; NO 51; PP. 16-21; BIBL. 6 REF.Article

A RANDOM ACCESS MEMORY DATA LOGGERCOXALL A; OWEN D.1978; LAB. PRACT.; GBR; DA. 1978; VOL. 27; NO 7; PP. 566-567; BIBL. 5 REF.Article

FIRST VMOS DEVICE IS STATIC RAM.1977; AUSTRAL. ELECTRON. ENGNG; AUSTRAL.; DA. 1977; VOL. 10; NO 9; PP. 21-22Article

STATIC N-MOS RAM IDLES ON TRICKLE CURRENTSCHERPENBERG FA.1981; ELECTRONICS; ISSN 0013-5070; USA; DA. 1981; VOL. 54; NO 2; PP. 129-132Article

LES FABRICANTS DE MEMOIRES MOS SE TOURNENT VERS LA REDONDANCEGROSVALET F.1981; ELECTRON. IND.; FRA; DA. 1981; NO 13; PP. 45-47Article

SINGLE S-V, 65 K RAM WITH SCALED-DOWN MOS STRUCTUREMASUDA H; HORI R; KAMIGAKI Y et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 672-677; BIBL. 11 REF.Article

NON-VOLATILE R.A.M.S IN CONSUMER CIRCUITSWALLACE C.1979; NEW ELECTRON.; GBR; DA. 1979; VOL. 12; NO 3; PP. 100-103; (3 P.)Article

STATISCHE RAMS IN MOS-TECHNIK MIT VERRINGERTEM LEISTUNGSBEDARF = MEMOIRES STATIQUES RAM EN TECHNOLOGIE MOS A CONSOMMATION REDUITEZARKOV I; VOLKOV P.1979; NACHR.-TECH., ELEKTRON.; DDR; DA. 1979; VOL. 29; NO 5; PP. 206-207; ABS. RUS/ENG/FRE; BIBL. 7 REF.Article

SPEED 4-K OR 16-K RAM EVALUATION WITH A LOW-COST RASTER-SEAN TESTERLOCKHART J.1978; ELECTRON. DESIGN; USA; DA. 1978; VOL. 26; NO 19; PP. 118-122Article

SYNCHRONOUS STATIC C.M.O.S. R.A.M.S.1978; NEW ELECTRON.; GBR; DA. 1978; VOL. 11; NO 23; PP. 27-29; (2 P.)Article

A 16 K-BIT STATIC IIL RAM WITH 25-NS ACCESS TIMEINABE Y; HAYASHI T; KAWARADA K et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 695-700; BIBL. 5 REF.Article

A REDUNDANCY CIRCUIT FOR A FAULT-TOLERANT 256 K MOS RAMMANO T; WADA M; IEDA N et al.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 4; PP. 726-731; BIBL. 9 REF.Article