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STUDIO MEDIANTE METODI OTTICI DEL SECONDO REGIME DI SCATTERING DINAMICO IN MBBA. = ETUDE AU MOYEN DE METHODE OPTIQUE DU SECOND REGIME DE DIFFUSION DYNAMIQUE DANS LE MBBAMALVANO R; RAVA P.1976; ATTI ACCAD. SCI. TORINO, CL. SCI. FIS. MAT. NAT.; ITAL.; DA. 1976; VOL. 110; NO 4; PP. 225-231; BIBL. 7 REF.Article

ELECTRON MOBILITY AND FREE-CARRIER ABSORPTION IN INP; DETERMINATION OF THE COMPENSATION RATIOWALUKIEWICZ W; LAGOWSKI J; JASTRZEBSKI L et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 5; PP. 2659-2668; BIBL. 30 REF.Article

ADVANCED CRYSTALLIZATION TECHNIQUES OF "SOLAR GRADE" SILICONGASPARINI M; CALLIGARICH C; RAVA P et al.1982; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 16/1982-09-27/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1982; PP. 74-79; BIBL. 7 REF.Conference Paper

Thin-film transistors with sputtered CdSe as semiconductorMOERSCH, G; RAVA, P; SCHWARZ, F et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 2, pp 449-451, issn 0018-9383, 3 p.Article

Magnetron-sputtered amorphous siliconDEMICHELIS, F; TAGLIAFERRO, A; TRESSO, E et al.Journal of applied physics. 1985, Vol 57, Num 12, pp 5424-5427, issn 0021-8979Article

a-SiC:H films deposited by PECVD from silane+acetylene and silane+acetylene+hydrogen gas mixtureGIORGIS, F; PIRRI, C. F; TRESSO, E et al.Diamond and related materials. 1997, Vol 6, Num 11, pp 1606-1611, issn 0925-9635Article

Correlation between structural and opto-electronic properties of a-Si1-xCx:H films deposited by plasma enhanced chemical vapour depositionAMBROSONE, G; BASA, D. K; COSCIA, U et al.Thin solid films. 2010, Vol 518, Num 20, pp 5871-5874, issn 0040-6090, 4 p.Article

Correlation between the optoelectronic properties and the structure of hydrogenated amorphous silicon-carbon films grown from a C2H2 gas sourceGIORGIS, F; PIRRI, C. F; TRESSO, E et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1997, Vol 75, Num 4, pp 471-483, issn 1364-2812Article

recent progress in studies of a-CSiSn:H alloysDEMICHELIS, F; KANIADAKIS, G; TAGLIAFERRO, A et al.Journal of applied physics. 1988, Vol 64, Num 2, pp 721-726, issn 0021-8979Article

Wide band gap amorphous silicon-based alloysGIORGIS, F; PIRRI, C. F; TRESSO, E et al.Physica. B, Condensed matter. 1997, Vol 229, Num 3-4, pp 233-239, issn 0921-4526Article

Investigation on physical properties and structure of amorphous hydrogfenated carbon filmsDEMICHELIS, F; FANCIULLI, M; KANIADAKIS, G et al.Journal of non-crystalline solids. 1988, Vol 101, Num 2-3, pp 179-186, issn 0022-3093Article

Density of states in the pseudo-gap of amorphous silicon-germanium alloys from electrical and optical measurementsPICARKIEWICZ, T; KOLODZIEV, A; SCHABOWSKA-OSIOWSKA, E et al.Applied physics letters. 1992, Vol 60, Num 12, pp 1465-1467, issn 0003-6951Article

Physical properties of undoped and doped hydrogenated amorphous silicon carbideDEMICHELIS, F; PIRRI, C. F; TRESSO, E et al.Semiconductor science and technology. 1991, Vol 6, Num 12, pp 1141-1146, issn 0268-1242Article

Semiconductor properties of amorphous C-Sn thin filmsMPAWENAYO, P; DEMICHELIS, F; RAVA, P et al.Thin solid films. 1987, Vol 146, Num 3, pp L19-L22, issn 0040-6090Article

Optical properties of hydrogenated amorphous siliconDEMICHELIS, F; MINETTI-MEZZETTI, E; TAGLIAFERRO, A et al.Journal of applied physics. 1986, Vol 59, Num 2, pp 611-618, issn 0021-8979Article

Influence of film thickness on optical and electrical properties of hydrogenated amorphous siliconDEMICHELIS, F; KANIADAKIS, G; MEZZETTI, E et al.Thin solid films. 1987, Vol 150, Num 1, pp 1-9, issn 0040-6090Article

Optical, structural and electrical properties of device-quality hydrogenated amorphous silicon-nitrogen films deposited by plasma-enhanced chemical vapour depositionGIORGIS, F; GIULIANI, F; PIRRI, C. F et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1998, Vol 77, Num 4, pp 925-944, issn 1364-2812Article

Boron an phosphorus doping of a-SiC:H thin films by means of ion implantationDEMICHELIS, F; CROVINI, G; PIRRI, C. F et al.Thin solid films. 1995, Vol 265, Num 1-2, pp 113-118, issn 0040-6090Article

Optimization of relevant deposition parameters for high quality a-SiC:H filmsDEMICHELIS, F; CROVINI, G; PIRRI, C. F et al.Solar energy materials and solar cells. 1995, Vol 37, Num 3-4, pp 315-321, issn 0927-0248Article

Correlation between physical properties and hydrogen concentration in magnetron-sputtered amorphous siliconDEMICHELIS, F; MINETTI-MEZZETTI, E; TAGLIAFERRO, A et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 10, pp 7022-7028, issn 0163-1829Article

Inhomogeneity of amorphous silicon thin films from optical transmission and reflection measurementsPISARKIEWICZ, T; STAPINSKI, T; CZTERNASTEK, H et al.Journal of non-crystalline solids. 1991, Vol 137-38, pp 619-622, issn 0022-3093, 1Conference Paper

Structure and optical properties of hydrogenated amorphous carbon-tin alloys prepared using the sputter-assisted plasma chemical deposition techniqueDEMICHELIS, F; KANIADAKIS, G; MPAWANAYO, P et al.Thin solid films. 1987, Vol 150, Num 2-3, pp 189-199, issn 0040-6090Article

Optimization of a-Si1-x:H films prepared by ultrahigh vacuum plasma enhanced chemical vapour deposition for electroluminescent devicesDEMICHELIS, F; CROVINI, G; PIRRI, C. F et al.Thin solid films. 1994, Vol 241, Num 1-2, pp 274-277, issn 0040-6090Conference Paper

Stability and quantum efficiency of a novel type of a-Si:H/a-SiC:H based UV detectorMANDRACCI, P; RASTELLO, M. L; RAVA, P et al.Thin solid films. 1999, Vol 337, Num 1-2, pp 232-234, issn 0040-6090Conference Paper

Effects of power density and molecule dwell time on compositional and optoelectronic properties of a-SiC : H alloysDEMICHELIS, F; CROVINI, G; GIORGIS, F et al.Solid state communications. 1996, Vol 98, Num 7, pp 617-622, issn 0038-1098Article

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