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SELF-CONSISTENT SOLUTIONS FOR IMPATT DIODE NETWORKSBRAZIL TJ; SCANLAN SO.1981; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1981; VOL. 29; NO 1; PP. 26-32; BIBL. 16 REF.Article

EFFECTS OF DEPLETION-LAYER MODULATION ON SPURIOUS OSCILLATIONS IN IMPATT DIODES.TANG P; HADDAD GI.1977; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1977; VOL. 25; NO 9; PP. 734-741; BIBL. 5 REF.Article

DOUBLE VELOCITY IMPATT DIODESADLERSTEIN MG; STATZ H.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 5; PP. 817-819; BIBL. 9 REF.Article

HIGH-POWER PULSED GAAS DOUBLE-DRIFT HYBRID-READ IMPATT DIODES FOR X-BANDBERENZ JJ; KINOSHITA J; HIERL TL et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 10; PP. 277-278; BIBL. 5 REF.Article

MILLIMETER-WAVE GAAS READ IMPATT DIODESADLERSTEIN MG; WALLACE RN; STEELE SR et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 9; PP. 1151-1156; BIBL. 12 REF.Article

CONDUCTION CURRENT INJECTION DELAY IN RED GAAS IMPATT DIODESADLERSTEIN MG; STATZ H.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 3; PP. 234-236; BIBL. 13 REF.Article

SMALL-SIGNAL CHARACTERISTICS OF A READ DIODE UNDER CONDITIONS OF FIELD-DEPENDENT VELOCITY AND FINITE REVERSE SATURATION CURRENT.WANG YC.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 4; PP. 609-615; BIBL. 8 REF.Article

CARRIER TRANSPORT IN THE DRIFT REGION OF READ-TYPE DIODESKUVAS RL.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 660-666; BIBL. 15 REF.Article

NOISE IN GALLIUM ARSENIDE AVALANCHE READ DIODES.STATZ H; PUCEL RA; SIMPSON JE et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 9; PP. 1075-1085; BIBL. 17 REF.Article

HIGH EFFICIENCY PULSED GAAS READ IMPATT DIODES.HIERL TL; BERENZ JJ; KINOSHITA J et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 5; PP. 155-157; BIBL. 3 REF.Article

A 60-W CW SOLID-STATE OSCILLATOR AT C BAND.WALLACE RN; ADLERSTEIN MG; STEELE SR et al.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 7; PP. 483-485; BIBL. 7 REF.Article

Compensation of microwave properties of silicon double-drift read diode for high bias current operationPATI, S. P.Semiconductor science and technology. 1992, Vol 7, Num 3, pp 352-356, issn 0268-1242Article

A 12-W GAAS READ-DIODE AMPLIFIER AT X BANDTSERNG HQ; COLEMAN DJ JR; DOERBECK FH et al.1978; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1978; VOL. 26; NO 10; PP. 774-778; BIBL. 14 REF.Article

LARGE-SIGNAL PERFORMANCE OF MICROWAVE TRANSIT-TIME DEVICES IN MIXED TUNNELING AND AVALANCHE BREAKDOWNELTA ME; HADDAD GI.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 6; PP. 941-948; BIBL. 15 REF.Article

Computer studies of quasi Read gallium arsenide IMPATT diode : including the effect of space chargeBANERJEE, J. P; GHOSH, S; NAG, B et al.International journal of electronics. 1997, Vol 82, Num 4, pp 335-345, issn 0020-7217Article

GaAs Read-type IMPATT diodes for D-bandTSCHERNITZ, M; FREYER, J; GROTHE, H et al.Electronics Letters. 1994, Vol 30, Num 13, pp 1070-1071, issn 0013-5194Article