E-PROM RELIABILITY. II: TESTS AND SCREENS WEED OUT FAILURES, PROJECT RATES OF RELIABILITYROSENBERG S.1980; ELECTRONICS; ISSN 0013-5070; USA; DA. 1980; VOL. 53; NO 18; PP. 136-141Article

MEMOIRES REPROGRAMMABLES: UNE NOUVELLE TECHNOLOGIE POUR LES EAROM.PEYRUCAT JF.1977; ELECTRON. APPL. INDUSTR.; FR.; DA. 1977; NO 234; PP. 37-39Article

MEMOIRES MORTES OU VIVES: COMMENT LES TESTER.BOUCHET C.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 280; PP. 21-26Article

OPTIMISING FIXED CONTENT MEMORIES.HAYNES G.1976; NEW ELECTRON.; G.B.; DA. 1976; VOL. 9; NO 19; PP. 26-29 (2P.)Article

PROGRAMMABLE READ-ONLY MEMORIES. FAIRCHILD SEMICONDUCTOR.1976; NEW ELECTRON.; G.B.; DA. 1976; VOL. 9; NO 14; PP. 24-26Article

A 4-MBIT FULL-WAFER ROMKITANO Y; KOHDA S; KIKUCHI H et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1621-1628; BIBL. 14 REF.Article

L'EEPROM QUI SE VEUT RAM NON VOLATILEROUBLOT R.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 282; PP. 44-45Article

POWER STROBING OF BIPOLAR READ-ONLY MEMORIES.JACKSON PJ.1978; MULLARD TECH. COMMUNIC.; GBR; DA. 1978; VOL. 14; NO 138; PP. 299-305Article

A BIPOLAR 16K ROM UTILIZING SCHOTTKY DIODE CELLS.GUNN JF; LYNES DJ; PRITCHETT RL et al.1977; COMPUTER; U.S.A.; DA. 1977; VOL. 10; NO 7; PP. 14-17Article

PATCHING A PROGRAM INTO A ROM MAY SEEM IMPOSSIBLE. INFACT, IT IS QUITE POSSIBLE AND CAN BE ACCOMPLISHED WITH A MINIMUM OF EXTRA CIRCUITRY.TRAVIS T.1976; ELECTRON. DESIGN; U.S.A.; DA. 1976; VOL. 24; NO 18; PP. 98-101; BIBL. 2 REF.Article

EXTENDED CYCLABILITY IN ELECTRICALLY-ALTERABLE READ-ONLY-MEMORIESDIMARIA DJ; DONG DW; FALCONY C et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 191-195; BIBL. 15 REF.Article

SOME PEDAGOGICAL CONSIDERATIONS OF DIGITAL FILTER HARDWARE IMPLEMENTATIONSCHMALZEL JL; HEDN DN; AHMED N et al.1980; I.E.E.E. CIRCUITS SYST. MAG.; USA; DA. 1980; VOL. 2; NO 1; PP. 4-13; BIBL. 11 REF.Article

BUILD A PROM PROGRAMMER.KERBER RJ.1976; ELECTRON. DESIGN; U.S.A.; DA. 1976; VOL. 24; NO 22; PP. 172-176; BIBL. 3 REF.Article

PROM-PROGRAMMIER-EINRICHTUNG BENOETIGT NUR 36 BYTE AN SOFTWARE = L'APPAREILLAGE DE PROGRAMMATION PROM NE DEMANDE QUE 36 BITS AU LOGICIELPELKA H.1978; ELEKTRONIK; DEU; DA. 1978; VOL. 27; NO 9; PP. 97-101; BIBL. 4 REF.Article

Dominance of interface effects in SRO―SiO₂―SRO DEIS structures for EAROM'sKUO-TUNG CHANG; ROSE, K.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1645-1650, issn 0018-9383Article

The effect of the laser pulses on high T_c superconductors and the principle of a read-only memoryURSU, I; POPESCU, M; MIHAILESCU, I. N et al.Applied physics communications. 1988, Vol 8, Num 4, pp 201-208, issn 0277-9374Article

CMOS ROMS FOR MICROPROCESSOR EVALUATIONPECKOVER P.1980; MICROPROCESS. MICROSYST.; ISSN 0141-9331; GBR; DA. 1980; VOL. 4; NO 8; PP. 303-306Article

FIRMWARE - A CORSET FOR PROCESS SOFTWARE COSTSBOND A.1980; PROCESS ENG.; ISSN 0370-1859; GBR; DA. 1980-04; PP. 51-53; (2 P.)Article

A MULTITRACK FERROELECTRIC ARRAY WITH INHERENT TRACK ACCESSGEARY JM.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 11; PP. 1046-1047; BIBL. 7 REF.Article

A PROGRAMMER FOR 2708 EPROMSHAINESWORTH DW; DENNIS RJ.1978; ELECTRON. ENGNG; GBR; DA. 1978; VOL. 50; NO 604; PP. 55-59Article

POWER SWITCH ROMS AND PROMS QUICKLY.GRAY J.1977; ELECTRON. DESIGN; U.S.A.; DA. 1977; VOL. 25; NO 9; PP. 102-104Article

ETUDE DE POINT MEMOIRE A JONCTION POUR PROM.MOUSSIE M.1977; DGRST-7570660; FR.; DA. 1977; PP. 1-37; BIBL. 2 P.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MINIATURISES)Report

LASER CODING OF BIPOLAR READ-ONLY MEMORIES.NORTH JC; WEICK WW.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 4; PP. 500-505; BIBL. 14 REF.Article

AN ULTRAFAST DIGITAL MULTIPLIER.RAMASUBBA RAO NP; CLEETUS GM; JOHARI VM et al.1976; ELECTRO-TECHNOLOGY; INDIA; DA. 1976; VOL. 20; NO 3; PP. 67-72; BIBL. 6 REF.Article

STUDY OF CHARGE TRAPPING AS A DEGRADATION MECHANISM IN ELECTRICALLY ALTERABLE READ-ONLY-MEMORIESFALCONY C; DIMARIA DJ; DONG DW et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 43-47; BIBL. 13 REF.Article