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E-PROM RELIABILITY. II: TESTS AND SCREENS WEED OUT FAILURES, PROJECT RATES OF RELIABILITYROSENBERG S.1980; ELECTRONICS; ISSN 0013-5070; USA; DA. 1980; VOL. 53; NO 18; PP. 136-141Article

MEMOIRES REPROGRAMMABLES: UNE NOUVELLE TECHNOLOGIE POUR LES EAROM.PEYRUCAT JF.1977; ELECTRON. APPL. INDUSTR.; FR.; DA. 1977; NO 234; PP. 37-39Article

EPROM TESTING. I: THEORETICAL CONSIDERATIONSALLINEY S; FANTINI F; MORANDI C et al.1982; MICROELECTRONICS AND RELIABILITY; ISSN 0026-2714; GBR; DA. 1982; VOL. 22; NO 5; PP. 965-986; BIBL. 9 REF.Article

A 4-MBIT FULL-WAFER ROMKITANO Y; KOHDA S; KIKUCHI H et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 686-693; BIBL. 14 REF.Article

MEMOIRES MORTES OU VIVES: COMMENT LES TESTER.BOUCHET C.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 280; PP. 21-26Article

OPTIMISING FIXED CONTENT MEMORIES.HAYNES G.1976; NEW ELECTRON.; G.B.; DA. 1976; VOL. 9; NO 19; PP. 26-29 (2P.)Article

E-PROM RELIABILITY. I: AN E-PROM'S INTEGRITY STARTS WITH ITS CELL STRUCTUREWOODS MH.1980; ELECTRONICS; ISSN 0013-5070; USA; DA. 1980; VOL. 53; NO 18; PP. 132-136; BIBL. 1 REF.Article

EPROM PROGRAMMER WITH UNLIMITED PROGRAMMING CAPABILITYPRAHLADA RAO N; MAHAJAN RS; ALLURAIAH A et al.1980; J. INST. ENGRS (INDIA), ELECTRON. TELECOMMUNIC. ENGNG DIV.; IND; DA. 1980; VOL. 61; NO 1; PP. 24-25; BIBL. 1 REF.Article

WIRE MEMORIES PROVIDE NON-DESTRUCTIVE ADVANTAGESTODA T.1978; J. ELECTRON. ENGNG; JPN; DA. 1978; NO 142; PP. 22-25Article

A NEW EAROM MEMORY CELL IMPLEMENTED BY DOUBLEGATE THICKNESS MNOST AND MICRORESISTOR LOADS.ANDREEVA AN.1978; C.R. ACAD. BULG. SCI.; BULG.; DA. 1978; VOL. 31; NO 1; PP. 31-33; BIBL. 4 REF.Article

PROGRAMMABLE READ-ONLY MEMORIES. FAIRCHILD SEMICONDUCTOR.1976; NEW ELECTRON.; G.B.; DA. 1976; VOL. 9; NO 14; PP. 24-26Article

A 4-MBIT FULL-WAFER ROMKITANO Y; KOHDA S; KIKUCHI H et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1621-1628; BIBL. 14 REF.Article

L'EEPROM QUI SE VEUT RAM NON VOLATILEROUBLOT R.1980; ELECTRON. APPL. INDUSTR.; FRA; DA. 1980; NO 282; PP. 44-45Article

POWER STROBING OF BIPOLAR READ-ONLY MEMORIES.JACKSON PJ.1978; MULLARD TECH. COMMUNIC.; GBR; DA. 1978; VOL. 14; NO 138; PP. 299-305Article

A BIPOLAR 16K ROM UTILIZING SCHOTTKY DIODE CELLS.GUNN JF; LYNES DJ; PRITCHETT RL et al.1977; COMPUTER; U.S.A.; DA. 1977; VOL. 10; NO 7; PP. 14-17Article

PATCHING A PROGRAM INTO A ROM MAY SEEM IMPOSSIBLE. INFACT, IT IS QUITE POSSIBLE AND CAN BE ACCOMPLISHED WITH A MINIMUM OF EXTRA CIRCUITRY.TRAVIS T.1976; ELECTRON. DESIGN; U.S.A.; DA. 1976; VOL. 24; NO 18; PP. 98-101; BIBL. 2 REF.Article

ZESPOLY PAMIECI HOLOGRAFICZNEJ Z LASERAMI ZLACZOWYMI = DISPOSITIFS DE MEMOIRE HOLOGRAPHIQUE AVEC LASERS A JONCTION SEMICONDUCTRICEMOROZOW WN.1979; ROZPR. ELEKTROTECH.; POL; DA. 1979; VOL. 25; NO 3; PP. 749-763; ABS. ENG/FRE/GER/RUS; BIBL. 14 REF.Article

SINGLE-SUPPLY ERASABLE PROM SAVES POWER WITH C-MOS PROCESSRAMACHANDRAN G.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 14; PP. 106-111Article

EXTENDED CYCLABILITY IN ELECTRICALLY-ALTERABLE READ-ONLY-MEMORIESDIMARIA DJ; DONG DW; FALCONY C et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 191-195; BIBL. 15 REF.Article

SOME PEDAGOGICAL CONSIDERATIONS OF DIGITAL FILTER HARDWARE IMPLEMENTATIONSCHMALZEL JL; HEDN DN; AHMED N et al.1980; I.E.E.E. CIRCUITS SYST. MAG.; USA; DA. 1980; VOL. 2; NO 1; PP. 4-13; BIBL. 11 REF.Article

BUILD A PROM PROGRAMMER.KERBER RJ.1976; ELECTRON. DESIGN; U.S.A.; DA. 1976; VOL. 24; NO 22; PP. 172-176; BIBL. 3 REF.Article

PROM-PROGRAMMIER-EINRICHTUNG BENOETIGT NUR 36 BYTE AN SOFTWARE = L'APPAREILLAGE DE PROGRAMMATION PROM NE DEMANDE QUE 36 BITS AU LOGICIELPELKA H.1978; ELEKTRONIK; DEU; DA. 1978; VOL. 27; NO 9; PP. 97-101; BIBL. 4 REF.Article

Dominance of interface effects in SRO―SiO2―SRO DEIS structures for EAROM'sKUO-TUNG CHANG; ROSE, K.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 10, pp 1645-1650, issn 0018-9383Article

The effect of the laser pulses on high Tc superconductors and the principle of a read-only memoryURSU, I; POPESCU, M; MIHAILESCU, I. N et al.Applied physics communications. 1988, Vol 8, Num 4, pp 201-208, issn 0277-9374Article

CMOS ROMS FOR MICROPROCESSOR EVALUATIONPECKOVER P.1980; MICROPROCESS. MICROSYST.; ISSN 0141-9331; GBR; DA. 1980; VOL. 4; NO 8; PP. 303-306Article

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