au.\*:("REBOLLO, J")
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Un exemple d'aménagement des ressources hydrauliques dans un espace côtier : L'approvisionnement des centres touristiques intégrés dans la Mancomunidad de Los canales del Taibilla dans le Sud-Est espagnol = An example of water management in a coastal environment : The water supply of touristic centres in the Man comunidad de los canales del Taibilla (South East of Spain)FERNANDO VERA REBOLLO, J.Villes du monde arabe. 1991, Num 22, pp 95-104, issn 0247-8498Conference Paper
Mutaciones espaciales producidas por el turismo en el municipio de TorreviejaVERA REBOLLO, J. F.Investigaciones geograficas Alicante. 1984, Num 2, pp 115-138Article
La fachada Este de España : transformaciones estructurales en el contexto de un gran eje de actividad económica = La façade orientale espagnole : transformations structurelles dans le contexte d'un grand axe d'activité économiqueVERA REBOLLO, J. F.Boletín de la Asociación de Geógrafos Españoles. 1990, Num 11, pp 67-87Article
Las condiciones climaticas y maritimas como factores de localizacion del turismo historico alicantino (Les conditions climatiques et maritimes comme facteur de localisation du tourisme historique à Alicante)VERA REBOLLO, J. F.Investigaciones geograficas. 1985, Num 3, pp 161-178Article
Analysis of punch-through breakdown in bulk silicon RF power LDMOS transistorsCORTES, I; FERNANDEZ-MARTINEZ, P; FLORES, D et al.Microelectronics and reliability. 2008, Vol 48, Num 2, pp 173-180, issn 0026-2714, 8 p.Article
The Bi-IGBT : a low losses power structure by IGBT parallel associationCARAMEL, C; DE MAGLIE, R; REBOLLO, J et al.Semiconductor science and technology. 2008, Vol 23, Num 5, issn 0268-1242, 055022.1Article
IGBT module failure analysis in railway applicationsPERPIN, X; SERVIERE, J. F; JORDI, X et al.Microelectronics and reliability. 2008, Vol 48, Num 8-9, pp 1427-1431, issn 0026-2714, 5 p.Conference Paper
Modeling of non-uniform heat generation in LDMOS transistorsROIG, J; FLORES, D; URRESTI, J et al.Solid-state electronics. 2005, Vol 49, Num 1, pp 77-84, issn 0038-1101, 8 p.Article
Dynamic latch-up in advanced LIGBT structures at high operating temperaturesVELLVEHI, M; JORDA, X; FLORES, D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 74, Num 1-3, pp 304-308, issn 0921-5107Conference Paper
Induction platinum-based chemotherapy followed by radical hyperfractionated radiotherapy with concurrent chemotherapy in the treatment of locally advanced non-small-cell carcinoma of the lungLOPEZ-PICAZO, J. M; AZINOVIC, I; ARISTU, J. J et al.American journal of clinical oncology. 1999, Vol 22, Num 2, pp 203-208, issn 0277-3732Article
Study of recoil implantation technique for deep low doped junction formation with aluminumGODIGNON, P; MORVAN, E; MONTSERRAT, J et al.Microelectronic engineering. 1998, Vol 40, Num 2, pp 99-109, issn 0167-9317Article
Portal and mesenteric vein thrombosis in a patient heterozygous for a mutation (Arg506 < Gln) in the factor V Gen (factor V Leiden)PINAR, A; SAENZ, R; REBOLLO, J et al.Journal of clinical gastroenterology. 1998, Vol 27, Num 4, pp 361-363, issn 0192-0790Article
Experimental demonstration of an anode voltage sensor for high voltage IGBT over-voltage protectionCARAMEL, C; FLORES, D; HIDALGO, S et al.Semiconductor science and technology. 2010, Vol 25, Num 11, issn 0268-1242, 115014.1-115014.5Article
A numerical study of scaling issues for trench power MOSFETsROIG, J; CORTES, I; JIMENEZ, D et al.Solid-state electronics. 2005, Vol 49, Num 6, pp 965-975, issn 0038-1101, 11 p.Article
An analytical model to predict the short-circuit thermal failure in SOL LDMOS with linear doping profileROIG, J; FLORES, D; JORDA, X et al.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 137-140Conference Paper
Modellization of the breakdown voltage of four-layer punch-through TVS diodesURRESTI, J; HIDALGO, S; FLORES, D et al.International conference on microelectronics. 2004, isbn 0-7803-8166-1, 2Vol, vol 1, 159-162Conference Paper
Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applicationsROIG, J; FLORES, D; HIDALGO, S et al.Microelectronics journal. 2004, Vol 35, Num 3, pp 291-297, issn 0959-8324, 7 p.Conference Paper
Optimisation of very low voltage TVS protection devicesURRESTI, J; HIDALGO, S; FIORES, D et al.Microelectronics journal. 2003, Vol 34, Num 9, pp 809-813, issn 0959-8324, 5 p.Article
Lateral spread of implanted ion distributions in 6H-SiC : simulationMORVAN, E; MESTRES, N; PASCUAL, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 61-62, pp 373-377, issn 0921-5107Conference Paper
Urokinase combination chemotherapy in small cell lung cancer : a phase II studyCALVO, F. A; HIDALGO, O. F; GONZALEZ, F et al.Cancer. 1992, Vol 70, Num 11, pp 2624-2630, issn 0008-543XArticle
High dose chemotherapy with peripheral blood stem cell (PBSC) support in solid tumours : preliminary resultsALGARRA, S. M; SUREDA, M; REBOLLO, J et al.Bone marrow transplantation (Basingstoke). 1990, Vol 5, pp 60-61, issn 0268-3369, 2 p., suppl. 1Conference Paper
ARDS associated with boutonneuse feverRODRIGUEZ, A. L; JEREZ, V; LOMBARDO, A. G et al.Chest. 1989, Vol 95, Num 4, pp 924-925, issn 0012-3692Article
An ON-resistance closed form for VDMOS devicesFERNANDEZ, J; HIDALGO, S; PAREDES, J et al.IEEE electron device letters. 1989, Vol 10, Num 5, pp 212-215, issn 0741-3106Article
Gate-Oxide Breakage Assisted by HCI in Advanced STI DeMOS TransistorsCORTES, I; ROIG, J; MOENS, P et al.IEEE electron device letters. 2012, Vol 33, Num 9, pp 1285-1287, issn 0741-3106, 3 p.Article
On the feasibility of superjunction thick-SOI power LDMOS transistors for RF base station applicationsCORTES, I; ROIG, J; FLORES, D et al.Semiconductor science and technology. 2007, Vol 22, Num 2, pp 1-9, issn 0268-1242, 9 p.Article