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ELECTRICAL FORMING ACTION IN TE-SE-CD STRUCTURESEL AZAB MI; CHAMPNESS CH.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 1; PP. 255-260; BIBL. 20 REF.Article

SURFACE RESISTANCE MEASUREMENT AS AN AID IN CONTROLLING THE FABRICATION OF SILICIDES.MGENU E; PETERSSON S; TOVE PA et al.1977; VACUM; G.B.; DA. 1977; VOL. 27; NO 3; PP. 209-211; BIBL. 9 REF.; (INST. SYMP. VAC. THIN FILM TECHNOL. PROC.; UPPSALA; 1976)Conference Paper

MECANISME DE FORMATION D'UNE BARRIERE REDRESSEUSE A UN CONTACT METAL-SEMICONDUCTEURVYATKIN AP; MAKSIMOVA NK; STEPANOV VE et al.1978; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1978; NO 27; PP. 21-27; BIBL. 23 REF.Article

PHOTORECEPTEUR DE STRUCTURE DE BASE AU-SIN-SIP DONT LE SIGNE DU PHOTOCOURANT DEPEND DE LA LONGUEUR D'ONDE DE LA LUMIEREVAKAROVA IS; GUTKIN AA; DMITRIEV MV et al.1978; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1978; VOL. 12; NO 4; PP. 776-780; BIBL. 11 REF.Article

LASER SCANNING TECHNIQUE FOR THE DETECTION OF RESISTIVITY INHOMOGENEITIES IN SILICON USING LIQUID RECTIFYING CONTACTSDRUGGE B; NORLANDER E.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 11; PP. 2124-2127; BIBL. 10 REF.Article

A REVIEW OF THE THEORY, TECHNOLOGY AND APPLICATIONS OF METAL-SEMICONDUCTOR RECTIFIERSRIDEOUT VL.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 48; NO 3; PP. 261-291; BIBL. 4 P.Article

EFFET DE LA PRESSION AXIALE SUR LES PARAMETRES D'UN CONTACT METAL-SEMICONDUCTEURKANCHUKOVSKIJ OP; MOROZ LV; PRESNOV VA et al.1977; IZVEST. AKAD. NAUK ARM. S.S.R., FIZ.; S.S.S.R.; DA. 1977; VOL. 12; NO 3; PP. 202-208; ABS. ARM. ANGL.; BIBL. 11 REF.Article

ANALYSIS OF PARALLEL SCHOTTKY CONTACTS BY DIFFERENTIAL INTERNAL PHOTOEMISSION SPECTROSCOPYOKUMURA T; TU KN.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 2; PP. 922-927; BIBL. 14 REF.Article

THE USE OF ION-BOMBARDMENT FOR PLATING METAL CONTACTS ONTO SEMICONDUCTORSENGLAND AA; RHODERICK EH.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 4; PP. 337-342; BIBL. 9 REF.Article

A STUDY OF THE DEEP CARRIER TRAPS IN A TE-SE-CD RECTIFYING STRUCTUREHOUSIN M; BASTIDE G; SAGNES G et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 9; PP. 4885-4888; BIBL. 8 REF.Article

CONDUCTION PROCESSES IN ANODIC TANTALUM OXIDE THIN FILMS WITH GOLD COUNTER ELECTRODESGUBANSKI SM; HUGHES DM.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 52; NO 1; PP. 119-127; BIBL. 14 REF.Article

DEVELOPPEMENT D'UN NOUVEAU PROCEDE DE REALISATION DE JONCTION SUR SILICIUM POLYCRISTALLINMULLER JC; SIFFERT P.1978; ; FRA; STRASBOURG: IMPR. CENTRE RECH. NUCLEAIRES; DA. 1978; DGRST-77 7 2006; 29 P.: 14 PL.; 30 CM; ABS. ENG; BIBL. 21 REF.; ACTION CONCERTEE: PHOTOPILES SOLAIRESReport

PLATINUM/TITANIUM DIOXIDE (RUTILE) INTERFACE. FORMATION OF OHMIC AND RECTIFYING JUNCTIONSHOPE GA; BARD AJ.1983; JOURNAL OF PHYSICAL CHEMISTRY; ISSN 0022-3654; USA; DA. 1983; VOL. 87; NO 11; PP. 1979-1984; BIBL. DISSEM.Article

A REVIEW OF BULK UNIPOLAR DIODES AND THEIR APPLICATIONSBOARD K.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 4; PP. 19-22; BIBL. 17 REF.Article

STABILITY OF ALUMINIUM-POLYSILICON PHOTOVOLTAIC JUNCTIONSTHOMSON DJ; MATIOWSKY MA; CARD HC et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 11; PP. 382-383; BIBL. 9 REF.Article

INDIUM CONTACTS TO LEAD TELLURIDECHANG B; SINGER KE; NORTHROP DC et al.1980; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1980; VOL. 13; NO 4; PP. 715-723; BIBL. 4 REF.Article

SPECIFIC CONTACT RESISTANCE OF THE NI/AU-GE/NGAP SYSTEM.LEI TF; LEE CL; CHANG CY et al.1978; SOLID-STATE ELECTRON.; G.B.; DA. 1978; VOL. 21; NO 2; PP. 385-391; BIBL. 19 REF.Article

MEASUREMENTS OF THE RECTIFYING BARRIER HEIGHTS OF VARIOUS RHODIUM SILICIDES WITH N-SILICONDE SOUSA PIRES J; D'HEURLE F; NORDE H et al.1980; APPL. PHYS. LETT.; USA; DA. 1980; VOL. 36; NO 2; PP. 153-155; BIBL. 15 REF.Article

RELAXATION DU PHOTOCOURANT DANS LES CONTACTS REDRESSEURS METAL-SEMI-CONDUCTEUR A COUCHE ISOLANTE INTERMEDIAIREGERASIMOV AL; GUTKIN AA; SEDOV VE et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 1; PP. 26-30; BIBL. 8 REF.Article

FORMATION OF IRIDIUM SILICIDES FROM I2 THIN FILMS ON SI SUBSTRATESPETERSSON S; BAGLIN J; HAMMER W et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3357-3365; BIBL. 27 REF.Article

Electrical characteristics of aluminum contacts to porous siliconZIMIN, S. P; KUZNETSOV, V. S; PROKAZNIKOV, A. V et al.Applied surface science. 1995, Vol 91, pp 355-358, issn 0169-4332Conference Paper

EVALUATING PTSI FRONT CONTACT TO SURFACE BARRIER DETECTORS.PETERSSON S; MGBENU E; NORDE H et al.1977; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1977; VOL. 143; NO 3; PP. 525-535; BIBL. 42 REF.Article

MEASUREMENTS OF THE RECTIFYING BARRIER HEIGHTS OF THE VARIOUS IRIDIUM SILICIDES WITH N-SIDE SOUSA PIRES J; ALI P; CROWDER B et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 2; PP. 202-204; BIBL. 14 REF.Article

INTERNAL SCHOTTKY BARRIERS IN SEMICONDUCTORSWEICHMAN FL.1982; CAN. J. PHYS.; ISSN 0008-4204; CAN; DA. 1982; VOL. 60; NO 3; PP. 269-272; ABS. FRE; BIBL. 17 REF.Article

A SMALL PORTABLE DETECTOR HEAD USING MIS-CONTACTED CDTE FOR X-RAY SPECTROMETRYEICHINGER P; KEMMER J.1977; REV. PHYS. APPL.; FR.; DA. 1977; VOL. 12; NO 2; PP. 339-341; ABS. FR.; BIBL. 3 REF.; (COLLOQ. INT. TELLURURE CADMIUM. PROPR. PHYS. APPL. 2; STRASBOURG; 1976)Conference Paper

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