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ELEMENTS REDRESSEURS AU SILICIUM DANS UN DISPOSITIF MICROMINIATURISEKLETCHENKOV II.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 7; PP. 121-122; BIBL. 3 REF.Serial Issue

PRECISION RECTIFICATIONBOWERS D.1980; ELECTRON. ENG.; ISSN 0013-4902; GBR; DA. 1980; VOL. 52; NO 639; PP. 71-84; (6 P.); BIBL. 3 REF.Article

RECTIFIER DIODES SWITCH IN 100 NS. = DES DIODES DE REDRESSEUR QUI COMMUTENT EN 100 NS1976; ELECTRONICS; U.S.A.; DA. 1976; VOL. 49; NO 5; PP. 148-153 (3P.)Article

100 JAHRE KRISTALLGLEICHRICHTER. VOM DETEKTOR ZUM TRANSISTOR. = HISTORIQUE SUR 100 ANS DU REDRESSEUR A CRISTAL. DU DETECTEUR AU TRANSISTORHOFMEISTER E.1974; P.T.T. BULL. TECH.; SUISSE; DA. 1974; NO 12; PP. 447-448Article

DIODE: ELECTRONIC INFORMATION SERIES1981; DIODE D.A.T.A. BOOK; USA; DA. 1981; VOL. 26; NO 34; 720 P.Serial Issue

MOLECULAR RECTIFIERS.AVIRAM A; RATNER MA.1974; CHEM. PHYS. LETTERS; NETHERL.; DA. 1974; VOL. 29; NO 2; PP. 277-283; BIBL. 22 REF.Article

CARACTERISTIQUE FREQUENTIELLE DU COURANT REDRESSE DANS LE CIRCUIT COMPORTANT UNE DIODE SEMICONDUCTRICERZHEVKIN KS; TSAREV NM.1975; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1975; VOL. 18; NO 5; PP. 11-18; BIBL. 6 REF.Article

POWER COMBINING IN AN ARRAY OF MICROWAVE POWER RECTIFIERSGUTMANN RJ; BORREGO JM.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 12; PP. 958-968; BIBL. 9 REF.Conference Paper

PROPERTIES OF AMORPHOUS-CRYSTALLINE SILICON JUNCTIONS.BUSMUNDRUD O.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 28; NO 1; PP. 255-262; ABS. ALLEM.; BIBL. 11 REF.Article

A TRANSIENT MODEL FOR A THREE TERMINAL P-N-P-N SWITCH AND ITS USE IN PREDICTING THE GATE TURN-ON PROCESSMCGHEE J.1973; INTERNATION. J. ELECTRON.; G.B.; DA. 1973; VOL. 35; NO 1; PP. 73-79; BIBL. 6 REF.Serial Issue

PRINCIPES DE LA DETECTION.HOUZE RC.1977; TOUTE ELECTRON.; FR.; DA. 1977; NO 426; PP. 69-72Article

RECTIFICATION IN ALXGA1-XAS-GAAS N-N HETEROJUNCTION DEVICESLEE SC; PEARSON GL.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 6; PP. 563-568; BIBL. 14 REF.Article

AN N-IN053GA047AS/N-INP RECTIFIERFORREST SR; KIM OK.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5838-5842; BIBL. 13 REF.Article

MEASURING RECTIFIER JUNCTION TEMPERATUREWILLS W.1978; ELECTRON. ENGNG; GBR; DA. 1978; VOL. 50; NO 614; PP. 45-47 (2P.)Article

UNDERSTANDING RECTIFIER DIODE DATANOBLE PG.1978; ELECTRON. COMPON. APPL.; NLD; DA. 1978; VOL. 1; NO 1; PP. 45-55Article

ETUDE DE LA FIABILITE D'UNE DIODE DE REDRESSEMENT A AVALANCHE CONTROLEE 400 MW EN BOITIER DO7.BONNENFANT JL; CHERON P; GAUFFRE G et al.1974; CNET-7145354; FR.; DA. 1974; PP. (70P.); BIBL. 6 REF.; (RAPP. FINAL, CENT. FIABILITE)Report

POWER SCHOTTKY DIODES - A SMART CHOICE FOR FAST RECTIFIERS.COOPER D; BIXBY B; CARVER L et al.1976; ELECTRONICS; U.S.A.; DA. 1976; VOL. 49; NO 3; PP. 85-89Article

REVERSE CHARACTERISTICS OF RECTIFYING TE-SE-CD STRUCTURESCHAMPNESS CH; EL AZAB MI.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 7; PP. 643-648; BIBL. 11 REF.Article

DIELECTRIC RESPONSE FUNCTION OF BREAKDOWN PLASMA IN SILICON-CONTROLLED RECTIFIERS.BANDOPADHYAYA TK; RATHORE SK.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 5; PP. 648-649; BIBL. 3 REF.Article

THEORY OF A FORWAD-BIASED DIFFUSED-JUNCTION P-L-N RECTIFIER. II. ANALYTICAL APPROXIMATIONSCHOO SC.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 2; PP. 197-211; BIBL. 8 REF.Serial Issue

PUNCH THROUGH AND NON-PUNCH THROUGH THYRISTORSSINGH DN; KUMAR R.1981; SOLID-STATE ELECTRON; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 8; PP. 790-791; BIBL. 13 REF.Article

THE INFLUENCE OF AUGER RECOMBINATION ON THE FORWARD CHARACTERISTIC OF SEMICONDUCTOR POWER RECTIFIERS AT HIGH CURRENT DENSITIESNILSSON NG.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 6; PP. 681-688; BIBL. 25 REF.Serial Issue

DISCRETE COMPONENTS-REFINEMENT MORE IMPORTANT THAN MINIATURISATIONMITCHELL B; GLEDHILL B.1972; ELECTRON. ENGNG; G.B.; DA. 1972; VOL. 44; NO 534; PP. 29-33; BIBL. 8 REF.Serial Issue

CALCUL DES PROCESSUS DE COMMUTATION D'UNE STRUCTURE P-N-P-N EN TENANT COMPTE DE LA RESISTANCE DE BASE REPARTIEGUSHCHINA NA.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 5; PP. 843-852; BIBL. 7 REF.Serial Issue

THEORIE DE LA TRANSFORMATION D'UN COURANT ALTERNATIF EN UN COURANT CONTINU DANS UNE STRUCTURE P-N DE SEMICONDUCTEUR POUR UNE FAIBLE INJECTIONKARDO SYSOEV AF; KONSTANTINOV OV; MEZRIN OA et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 3; PP. 490-497; BIBL. 7 REF.Article

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