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kw.\*:("REFLECTION HIGH ENERGY ELECTRON DIFFRACTION")

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MANY-BEAM CALCULATION OF REFLECTION HIGH ENERGY ELECTRON DIFFRACTION (RHEED) INSENSITIES BY THE MULTI-SLICE METHODICHIMIYA A.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 1; PP. 176-180; BIBL. 14 REF.Article

GEOMETRICAL SURFACE WAVE RESONANCE AT A SILICON (111) SURFACE IN REFLECTION HIGH-ENERGY ELECTRON DIFFRACTIONHAYAKAWA K; AIZAWA N.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 4; PP. L215-L216; BIBL. 8 REF.Article

HETEROEPITAXIAL GROWTH OF GE ON <111> SI BY VACUUM EVAPORATIONGAROZZO M; CONTE G; EVANGELISTI F et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 11; PP. 1070-1072; BIBL. 13 REF.Article

GENERALIZED BETHE POTENTIAL IN REFLECTION ELECTRON DIFFRACTION.ICHIKAWA M; HAYAKAWA K.1977; J. PHYS. SOC. JAP.; JAP.; DA. 1977; VOL. 42; NO 6; PP. 1957-1964; BIBL. 9 REF.Article

INFLUENCE OF SOURCE COMPOSITION ON THE PROPERTIES OF FLASH-EVAPORATED THIN FILMS IN THE CU-IN-SE SYSTEMNEUMANN H; SCHUMANN B; NOWAK E et al.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 7; PP. 895-900; ABS. GER; BIBL. 18 REF.Article

SURFACE RUMPLING OF MGO (001) DEDUCED FROM CHANGE IN RHEED KIKUCHI PATTERN. II: THEORETICALMURATA Y.1982; JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN; ISSN 0031-9015; JPN; DA. 1982; VOL. 51; NO 6; PP. 1932-1935; BIBL. 10 REF.Article

INCORPORATION OF OXYGEN ATOMS INTO AS+ IMPLANTED SILICON DURING CW CO2 LASER ANNEALING IN O2BOYD IW.1983; APPLIED PHYSICS. A, SOLIDS AND SURFACES; ISSN 0721-7250; DEU; DA. 1983; VOL. 31; NO 2; PP. 71-74; BIBL. 15 REF.Article

A PRAGMATIC APPROACH TO ADATOM-INDUCED SURFACE RECONSTRUCTION OF III-V COMPOUNDSWOOD CEC; SINGER K; OHASHI T et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 5; PP. 2732-2737; BIBL. 15 REF.Article

SURFACE RUMPLING OF MGO(001) DEDUCED FROM CHANGES IN RHEED KIKUCHI PATTERN. I: EXPERIMENTALGOTOH T; MURAKAMI S; KINOSITA K et al.1981; J. PHYS. SOC. JPN.; ISSN 0031-9015; JPN; DA. 1981; VOL. 50; NO 6; PP. 2063-2068; BIBL. 15 REF.Article

DIFFRACTION BY SMALL CRYSTALS ON A SINGLE CRYSTAL SUBSTRATE.COWLEY JM; CHANG YU JENG.1978; SURF. SCI.; NETHERL.; DA. 1978; VOL. 72; NO 2; PP. 379-389; BIBL. 7 REF.Article

Surface reconstructions on Sb-irradiated GaAs(001) formed by molecular beam epitaxyKAKUDA, Naoki; TSUKAMOTO, Shiro; ISHII, Akira et al.Microelectronics journal. 2007, Vol 38, Num 4-5, pp 620-624, issn 0959-8324, 5 p.Article

EPITAXIAL GROWTH OF COPPER ON VACUUM-CLEAVED MICA = CROISSANCE EPITAXIQUE DU CUIVRE SUR DU MICA ELEVE SOUS VIDESTIDDARD MHB.1982; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1982; VOL. 97; NO 1; PP. 91-96; BIBL. 9 REF.Article

GROWTH OF DIAMOND PARTICLES FROM METHANE-HYDROGEN GASMATSUMOTO S; SATO Y; TSUTSUMI M et al.1982; J. MATER. SCI.; ISSN 0022-2461; GBR; DA. 1982; VOL. 17; NO 11; PP. 3106-3112; BIBL. 17 REF.Article

ION BEAM EPITOXY OF SILICON ON GE AND SI AT TEMPERATURES OF 400 KZALM PC; BECKERS LJ.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 2; PP. 167-169; BIBL. 4 REF.Article

NEW STRUCTURE ON TIN(001) CLEAVED SURFACESKAKIBAYASHI H.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 7; PART. 2; PP. 405-407; BIBL. 9 REF.Article

THE HETEROEPITAXIAL GROWTH OF VACUUM-DEPOSITED GAP THIN FILMS ON SI SUBSTRATESMALINA V; KOHOUT J.1982; CRYST. RES. TECHNOL. (1979); ISSN 0232-1300; DDR; DA. 1982; VOL. 17; NO 3; PP. 333-337; ABS. RUS; BIBL. 9 REF.Article

POLYTYPISM IN CLOOSE-PACKED STRUCTURESDHANANJAI PANDEY; KRISHNA P.1982; CURR. TOP. MATER. SCI.; ISSN 0165-1854; NLD; DA. 1982; VOL. 9; PP. 415-491; BIBL. 327 REF.Article

S-DOPING OF MBE-GASB WITH H2S GASGOTOH H; SASAMOTO K; KURODA S et al.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 12; PP. L893-L896; BIBL. 6 REF.Article

PHASE BIDIMENSIONNELLE ORDONNEE A LA SURFACE DE SEPARATION GERMANIUM-SULFURE DE GERMANIUMKLAUA M; MAJNEL M; PCHELYAKOV OP et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 9; PP. 2560-2566; BIBL. 9 REF.Article

A THEORY OF RHEEDMAKSYM PA; BEEBY JL.1981; SURF. SCI.; ISSN 0039-6028; NLD; DA. 1981; VOL. 110; NO 2; PP. 423-438; BIBL. 13 REF.Article

AMORPHOUS TO CRYSTALLINE STATE CONVERSION IN DEPOSITED SILICON LAYERSKALITZOVA MG; SIMOV SB; PANTCHEV BG et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 63; NO 2; PP. 743-749; ABS. GER; BIBL. 17 REF.Article

CHARACTERIZATION OF TREATED PBTE SURFACES BY MEANS OF RHEED AND RBSSALEWSKI W; SCHENK M.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 5; PP. 671-677; ABS. GER; BIBL. 19 REF.Article

MICRO-PROBE REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION TECHNIQUE. III: OBSERVATION OF POLYCRYSTALLINE SILICON FILM ON CRYSTALLINE SILICON SUBSTRATE IRRADIATED BY CONTINUOUS-WAVE AR+-LASERICHIKAWA M; OHKURA M; HAYAKAWA K et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 1; PP. 527-533; BIBL. 24 REF.Article

ETUDE DE LA STRUCTURE ET DES PROPRIETES D'ELASTORESISTANCE DES COUCHES MINCES DE BISMUTHBUTTO C; BERTY J.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 101; NO 4; PP. 357-368; BIBL. 14 REF.Article

CR GETTERING BY NE ION IMPLANTATION AND THE CORRELATION WITH THE ELECTRICAL ACTIVATION OF IMPLANTED SI IN SEMI-INSULATING GAASYAGITA H; ONUMA T.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 2; PP. 1218-1220; BIBL. 10 REF.Article

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