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TRANSPORT DES PORTEURS DANS UNE STRUCTURE P-I-P A HAUT NIVEAU D'INJECTIONPALKO EH V; UVAROV AI.1978; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1978; VOL. 12; NO 4; PP. 791-797; BIBL. 4 REF.Article

NOISE IN BIPOLAR JUNCTION TRANSISTORS AT HIGH INJECTION LEVELS.WADE TE; VAN DER ZIEL A.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 381-383; BIBL. 5 REF.Article

A CURVE-FITTED CIRCUITS MODEL FOR BIPOLAR TRANSISTOR FT ROLL-OFF AT HIGH INJECTION LEVELS.CHOMA J JR.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 346-348; BIBL. 13 REF.Article

DIFFUSIVITY AT HIGH INJECTION IN EPITAXIAL POWER TRANSISTORS.CONTI M; CORDA G.1977; SOLID. STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 7; PP. 563-566; BIBL. 23 REF.Article

HIGH-INJECTION NOISE IN TRANSISTORS.VAN DER ZIEL A.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 8; PP. 715-720; BIBL. 9 REF.Article

TRANSISTOR NOISE THEORY IN THE MIDDLEBROOK LIMIT OF HIGH INJECTIONGARDNER CL; VAN DER ZIEL A.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 11; PP. 1155-1158; BIBL. 6 REF.Article

BRUIT DE FOND DES TRANSISTORS BIPOLAIRES ASSOCIE AUX PHENOMENES DE TRANSPORT EN MOYENNE ET HAUTE INJECTIONS. APPLICATION AUX COMPOSANTS HYPERFREQUENCES.BLASQUEZ G; CAMINADE J; LE GAC G et al.1977; DGRST-74700443; FR.; DA. 1977; PP. 1-226; BIBL. DISSEM.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

DOUBLE INJECTION DANS LES SEMICONDUCTEURS A IMPURETES PROFONDESKARAGEORGIJ ALKALAEV PM; LEJDERMAN A YU; RABINOVICH F YA et al.1972; UKRAIN. FIZ. ZH.; S.S.S.R.; DA. 1972; VOL. 17; NO 9; PP. 1470-1481; ABS. ANGL.; BIBL. 22 REF.Serial Issue

A NEW APPROACH TO THE THEORY AND MODELING OF INSULATED-GATE FIELD-EFFECT TRANSISTORS.EL MANSY YA; BOOTHROYD AR.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 241-253; BIBL. 20 REF.Article

CONTRIBUTION A L'ETUDE DU SCHEMA EQUIVALENT BIDIMENSIONNEL DU TRANSISTOR BIPOLAIRE HYPERFREQUENCE.DU PORT DE PONTCHARRA J.1975; ; S.L.; DA. 1975; PP. (101P.); BIBL. 3 P.; (THESE DOCT. 3E. CYCLE, PHYS., ELECTRON.; UNIV. SCI. MED. GRENOBLE)Thesis

HIGH-LEVEL INJECTION IN THE EPILAYER OF THE I²L TRANSISTOR.YU K.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 7; PP. 202-204; BIBL. 3 REF.Article

TRANSMISSION LINE MODEL OF HIGH INJECTION NOISE IN JUNCTION DIODES.VAN DER ZIEL A; VAN VLIET KM.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 8; PP. 721-723; BIBL. 11 REF.Article

INJECTED CARRIER LIFETIMES AND DOUBLE-INJECTION CURRENTS IN SEMICONDUCTORS WITH A SINGLE IMPURITY LEVELKUWANO H.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 7; PP. 5061-5067; BIBL. 8 REF.Article

MISE AU POINT D'UNE METHODE DE MESURE DU TEMPS DE VIE DANS LA BASE DE DIODES RAPIDES OU DE COMMUTATION ET LES TRANSISTORSBIELLE DASPET D; PINEL J; BENZOHRA M et al.1975; DGRST-7371361; FR.; DA. 1975; PP. (23P.); H.T. 1; BIBL. 2 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report