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MODELE A PETITS SIGNAUX DE LA ZONE ACTIVE DU TRANSISTOR BIPOLAIRE.GLINEUR A.1975; REV. H.F.; BELG.; DA. 1975; VOL. 9; NO 10; PP. 305-317; BIBL. 10 REF.Article

A SMALL SIGNAL ANALYSIS OF AN IMPATT DEVICE HAVING TWO AVALANCHE LAYERS INTERSPACED BY A DRIFT LAYER.SOM B; PAL BB; ROY SK et al.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 10; PP. 1029-1038; BIBL. 8 REF.Article

CONVERTISSEUR ANALOGIQUE-DIGITAL RAPIDE POUR SIGNAUX DE FAIBLE NIVEAUKHACHATUROV SD; STOKAJ VP.1972; IZMERITEL. TEKH.; S.S.S.R.; DA. 1972; NO 11; PP. 8-11; BIBL. 6 REF.Serial Issue

PHASENHOMOGENITAETSVERHALTEN IM OPTISCHEN WELLENFELD MODULIERTER ELEKTROLUMINESZENZDIODEN VOM FLAECHENSTRAHLERTYP = COMPORTEMENT D'HOMOGENEITE DE PHASE DANS LE CHAMP D'ONDES OPTIQUES DE DIODES ELECTROLUMINESCENTES MODULEES DU TYPE EMETTEUR EN SURFACEZEHE A.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 10; PP. 1175-1184; ABS. ANGL.; BIBL. 11 REF.Serial Issue

TRANSISTOR AMPLIFIERSJOLLS KR; RIEDINGER RL.sdCHEM. ENGNG; U.S.A.; DA. 61-6; VOL. 80; NO 8; PP. (5 REF.)Serial Issue

SMALL-SIGNAL ADMITTANCE OF A MAGNETODIODE.PELEIDERER.1975; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1975; VOL. 4; NO 1; PP. 13-24; ABS. ALLEM.; BIBL. 1 P.Article

SMALL-SIGNAL BARITT NOISE MEASURES.CHRISTIE J; STEWART JAC.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 10; PP. 836-841; BIBL. 10 REF.Article

GROSSSIGNALMODELL FUER DIE IMPATT-DIODE. = MODELE DE DIODE IMPATT POUR SIGNAL FORTKREMER R.1975; ARCH. ELEKTRON. UBERTRAG.-TECH.; DTSCH.; DA. 1975; VOL. 29; NO 9; PP. 361-366; ABS. ANGL.; BIBL. 6 REF.Article

KLEINSIGNALVERHALTEN DES NICHTIDEALEN OPERATIONSVERSTAERKERS MIT DIFFERENZEINGAENGEN UNTER BERUECKSICHTIGUNG SEINER EINGANGSLEITWERTE UND DER QUELLEITWERTE. = COMPORTEMENT AUX SIGNAUX FAIBLES DE L'AMPLIFICATEUR OPERATIONNEL NON IDEAL AVEC ENTREES DIFFERENTIELLES EN TENANT COMPTE DE SA CONDUCTANCE D'ENTREE ET DE LA CONDUCTANCE DE LA COURCEROMMEL G.1974; A.T.M. MESSTECH. PRAXIS; DTSCH.; DA. 1974; NO 463; PP. 149-152; BIBL. 3 REF.Article

APPAREIL POUR LA MESURE DES PARAMETRES EN PETITS SIGNAUX DES TRANSISTORS A EFFET DE CHAMPGALKIN VN.1974; IZMERITEL. TEKH.; S.S.S.R.; DA. 1974; NO 4; PP. 66-68; BIBL. 4 REF.Article

A SMALL SIGNAL THEORY OF THE FM ELECTROLUMINESCENT DIODES.KUCERA L; MISEK J.1975; INTERNATION. J. ELECTRON.; G.B.; DA. 1975; VOL. 38; NO 3; PP. 393-399; BIBL. 5 REF.Article

CARACTERISTIQUE EN FREQUENCE D'UNE DIODE LUMINESCENTE A INJECTION A FAIBLE SIGNALOLEKSENKO PF; SVECHNIKOV SV; SYPKO NI et al.1974; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1974; NO 14; PP. 81-85; BIBL. 4 REF.Article

THREE-DIMENSIONAL SMALL-SIGNAL ANALYSIS OF BIPOLAR TRANSISTORSBLUE JL.1972; BELL SYST. TECH. J.; U.S.A.; DA. 1972; VOL. 51; NO 4; PP. 889-902; BIBL. 5 REF.Serial Issue

DIODES STABILIZE LED OUTPUTDETERS RA.1978; INSTRUM. TECHNOL.; USA; DA. 1978; VOL. 25; NO 8; PP. 69Article

EFFECT OF TEMPERATURE ON DEVICE ADMITTANCE OF GAAS AND SI IMPATT DIODES.TAKAYAMA Y.1975; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1975; VOL. 23; NO 8; PP. 650-673; BIBL. 13 REF.Article

SMALL-SIGNALL DC AND AC ANALYSIS OF BARITT DIODE. = ANALYSE EN COURANT CONTINU ET EN COURANT ALTERNATIF POUR DES SIGNAUX FAIBLES D'UNE DIODE BARITTSATYANARAYANA VS; SUBRAHMANIAM V.1975; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1975; VOL. 13; NO 11; PP. 746-751; BIBL. 4 REF.Article

THE INFLUENCE OF CARRIER CAPTURE IN DEEP TRAPS ON THE SMALL-SIGNAL CHARACTERISTICS OF DOUBLE-INJECTION CURRENTS IN SEMICONDUCTORS.ARONOV DA; KOTOV EP; KOTOV YP et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 1; PP. 97-105; ABS. RUSSE; BIBL. 16 REF.Article

THE SMALL SIGNAL ADMITTANCE OF EARBON IMPLANTED P-N DIODES.HOWES MJ; MORGAN DV; ASHBURN P et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 6; PP. 491-497; BIBL. 20 REF.Article

SUR LA THEORIE DES FAIBLES SIGNAUX DES CIRCUITS OPTOELECTRONIQUESMOLCHANOV AA; SVECHNIKOV SV; STEPANCHUK VP et al.1973; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1973; NO 12; PP. 12-24; BIBL. 9 REF.Serial Issue

OPTIMUM DESIGN OF AVALANCHE DIODE FOR IMPATT OSCILLATIONMATSUMURA M.1972; N.E.C. RES. DEVELOP.; JAP.; DA. 1972; NO 26; PP. 1-13; BIBL. 19 REF.Serial Issue

SMALL-SIGNAL SIMULATION OF IMPATT DIODE AMPLIFIERS.CHRISTIE J; STEWART JAC.1975; INTERNATION. J. ELECTRON.; G.B.; DA. 1975; VOL. 39; NO 1; PP. 61-73; BIBL. 13 REF.Article

SMALL-SIGNAL THEORETICAL ANALYSIS OF SCHOTTKY BARRIER BARITT DIODES.MARIN N.1975; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1975; VOL. 20; NO 8; PP. 797-811; BIBL. 17 REF.Article

KLEINSIGNALMODELLE FUER IMPATT-DIODEN. = MODELES A SIGNAUX FAIBLES POUR LES DIODES IMPATTKREMER R.1975; ARCH. ELEKTRON. UEBERTRAG.-TECH.; DTSCH.; DA. 1975; VOL. 29; NO 7-8; PP. 296-304; ABS. ANGL.; BIBL. 20 REF.Article

THE MONOLITHIC OP AMP: A TUTORIAL STUDY.SOLOMON JE.1974; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1974; VOL. 9; NO 6; PP. 314-332; BIBL. 13 REF.Article

SMALL-SIGNAL EQUIVALENT CIRCUIT FOR IMPATT TRANSISTORS.NGUYEN QUANG A.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 21; PP. 503-504; BIBL. 4 REF.Article

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