GROSSSIGNAL-SCHALTVERHALTEN VON BIPOLARTRANSISTOREN BEI KLEINEN VERSORGUNGSSPANNUNGEN (UEBER-SPEICHER-EFFEKT) = COMPORTEMENT DE TRANSISTORS BIPOLAIRES EN COMMUTATION ET EN REGIME DE SIGNAUX FORTS AUX FAIBLES TENSIONS D'ALIMENTATION (EFFET DE RETENTION EXCESSIVE DE CHARGES)FILENSKY W; BENEKING H.1981; AEUE, ARCH. ELEKTRON. UEBERTRAGUNGSTECH.; ISSN 0001-1096; DEU; DA. 1981; VOL. 35; NO 10; PP. 397-402; ABS. ENG; BIBL. 8 REF.Article

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LARGE-SIGNAL EQUIVALENT CIRCUIT OF A GUNN ELEMENT = CIRCUIT EQUIVALENT A UN LARGE SIGNAL D'UN ELEMENT GUNNMULLER RR.1972; NACHR.-TECH.Z.; DTSCH.; DA. 1972; VOL. 25; NO 8; PP. 383-384; BIBL. 7 REF.Serial Issue

VERBESSERUNG DER GROSSSIGNALBANDBREITE BEIM A109. = AMELIORATION DE LA LARGEUR DE BANDE EN REGIME DE FORT SIGNAL DANS LE CAS DE L'AMPLIFICATEUR OPERATIONNEL A109SOMMER K.1975; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1975; VOL. 24; NO 16; PP. 535-537; BIBL. 5 REF.Article

CARACTERISTIQUES IMPULSIONNELLES ET PARAMETRES DU TRANSISTOR UTILISE DANS DES DISPOSITIFS A FORTS NIVEAUX DES SIGNAUXSMIRNOV GV.1973; IZVEST. VYSSH. UCHEBN. ZAVED., PRIBOROSTR.; S.S.S.R.; DA. 1973; VOL. 16; NO 1; PP. 97-100; BIBL. 4 REF.Serial Issue

LARGE-SIGNAL RESISTANCE OF IMPATT DIODES OBTAINED FROM RF-POWER TO DC-CURRENT CHARACTERISTICS.DETLEFSEN J; SCHUCK WD.1974; NACHR.-TECH. Z.; DTSCH.; DA. 1974; VOL. 27; NO 7; PP. 280-282; ABS. ALLEM.; BIBL. 9 REF.Article

RADIAL AND AXIAL RF CURRENT AND VELOCITY DISTRIBUTIONS IN LARGE-SIGNAL VELOCITY-MODULATED ELECTRON BEAMSGILMOUR AS JR.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 7; PP. 886-890; BIBL. 5 REF.Serial Issue

FLOATING SWITCH WITH LARGE-SIGNAL CAPABILITYHAMED A; SUTCLIFFE H.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 4; PP. 79-80; BIBL. 5 REF.Serial Issue

BESTIMMUNG DER GROSSIGNALADMITTANZ VON IMPATT-DIODEN AUS VERSTAERKERMESSUNGEN. = DETERMINATION DE L'ADMITTANCE POUR SIGNAL FORT DES DIODES IMPATT A PARTIR DE MESURES D'AMPLIFICATIONKREMER R.1975; NACHR.-TECH. Z.; DTSCH.; DA. 1975; VOL. 28; NO 9; PP. 292-299; ABS. ANGL.; BIBL. 11 REF.Article

STABILITY OF INJECTION-LOCKED OSCILLATORSKUROKAWA K.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 7; PP. 907-908Serial Issue

LARGE-SIGNAL COMPUTER SIMULATION OF IMPATT DIODESSCANLAN SO; BRAZIL TJ.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 1; PP. 12-21; BIBL. 34 REF.Article

A RELIABLE FIFTEEN-PERCENT-EFFICIENCY SILICON DOUBLE-DRIFT-REGION IMPATT DIODE.LEKHOLM A; SELLBERG E; WEISSGLAS P et al.1975; PROC. I.E.E.E.; U.S.A.; DA. 1975; VOL. 63; NO 8; PP. 1613-1615; BIBL. 5 REF.Article

A COMPARISON OF SILICON AND GALLIUM ARSENIDE LARGE SIGNAL IMPATT DIODE BEHAVIOUR BETWEEN 10 AND 100 GHZGRIERSON JR; O'HARA S.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 6; PP. 719-741; BIBL. 28 REF.Serial Issue

LARGE-SIGNAL ANALYSIS OF THE SILICON PNP-BARITT DIODE.KARASEK M.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 625-631; BIBL. 17 REF.Article

GROSSSIGNALVERZERRUNGEN IN HOCHLINEAREN, KOMPLEMENTAEREN EMITTERFOLGERENDSTUFEN FUER BREITBANDANTENNENVERSTAERKER. = DISTORSIONS POUR DES SIGNAUX FORTS DANS LES ETAGES SUIVEURS DE L'EMETTEUR COMPLEMENTAIRES A HAUTE LINEARITE POUR AMPLIFICATEURS D'ANTENNES A BANDE LARGELINDENMEIER H; POPP R.1975; NACHR.-TECH. Z.; DTSCH.; DA. 1975; VOL. 28; NO 1; PP. 1-6; BIBL. 7 REF.Article

GERMANIUM TUNNEL-DIODE OSCILLATORS AND AMPLIFIERS, A LARGE SIGNAL ANALYSISMAHAPATRA S; JOSHI JS.1973; INTERNATION. J. ELECTRON.; G.B.; DA. 1973; VOL. 35; NO 2; PP. 169-176; BIBL. 7 REF.Serial Issue

MICROWAVE BARITT DIODES. I. LARGE-SIGNAL PERFORMANCEHARTH W; CLAASSEN M.1973; NACHR.-TECH. Z.; DTSCH.; DA. 1973; VOL. 26; NO 1; PP. 26-29; ABS. ALLEM.; BIBL. 29 REF.Serial Issue

ANALYSIS OF LARGE-SIGNAL NOISE IN READ OSCILLATORSSJOLUND A.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 9; PP. 971-978; BIBL. 13 REF.Serial Issue

SELF-CONSISTENT LARGE-SIGNAL INTERACTION IN A TWT GYROTRONLINDSAY PA.1981; INT. J. ELECTRON. THEOR. EXP.; ISSN 0020-7217; GBR; DA. 1981; VOL. 51; NO 4; PP. 379-393; BIBL. 18 REF.Article

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NOISE IN IMPATT-DIODE OSCILLATORS AT LARGE-SIGNAL LEVELS. = BRUIT DES OSCILLATEURS A DIODE IMPATT EN REGIME DE GRANDS SIGNAUXGOEDBLOED JJ; VLAARDINGERBROEK MT.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 6; PP. 342-351; BIBL. 32 REF.Article

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MICROWAVE PHASE DETECTORS FOR PSK DEMODULATORSOHM G; ALBERTY M.1981; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1981; VOL. 29; NO 1; PP. 724-731; BIBL. 3 REF.Article