THE FORMATION OF SIO₂ IN AN RF GENERATED OXYGEN PLASMA. II: THE PRESSURE RANGE ABOVE 10 M TORRRAY AK; REISMAN A.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 11; PP. 2466-2472; BIBL. 11 REF.Article

ON A NON-LINEAR DIFFERENTIAL EQUATION COMMON TO SEVERAL PROBLEMS IN HYDRAULICS : AN ADDENDUM.STEBER G; REISMAN A.1969; J. HYDROL.; NLD; 1969, VOL. 8, NUM. 0003, P. 336 A 340Miscellaneous

Electrical and structural effects on ionizing radiation in IGFETSREISMAN, A.Journal of electronic materials. 1989, Vol 18, Num 6, pp 745-755, issn 0361-5235Article

THE FORMATION OF SIO₂ IN AN RF GENERATED OXYGEN PLASMA. I: THE PRESSURE RANGE BELOW 10 M TORRRAY AK; REISMAN A.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 11; PP. 2460-2465; BIBL. 20 REF.Article

A TAXONOMY OF MANPOWER. EDUCATIONAL PLANNING MODELSBALINSKY W; REISMAN A.1973; SOCIO-ECON. PLANNG SCI.; G.B.; DA. 1973; VOL. 7; NO 1; PP. 13-17; BIBL. 10REF.Article

SOME MANPOWER PLANNING MODELS BASED ON LEVELS OF EDUCATIONAL ATTAINMENTBALINSKY W; REISMAN A.1972; MANAG. SCI.; U.S.A.; DA. 1972; VOL. 18; NO 12; PP. B-691-B-705; BIBL. 22 REF.Serial Issue

AC GAS DISCHARGE PANELS: SOME GENERAL CONSIDERATIONSREISMAN A; PARK KC.1978; I.B.M. J. RES. DEVELOP.; USA; DA. 1978; VOL. 22; NO 6; PP. 589-595; BIBL. 17 REF.Article

SINGLE-CYCLE GAS PANEL ASSEMBLYREISMAN A; BERKENBLIT M; CHAN SA et al.1978; I.B.M. J. RES. DEVELOP.; USA; DA. 1978; VOL. 22; NO 6; PP. 596-600; BIBL. 6 REF.Article

ROLE OF COPPER IONS IN LOW-MELTING SOLDER GLASSES.TAKAMORI T; REISMAN A; BERKENBLIT M et al.1976; J. AMER. CERAM. SOC.; U.S.A.; DA. 1976; VOL. 59; NO 7-8; PP. 312-316; BIBL. 13 REF.Article

Toward meta research on technology transferLIMING ZHAO; REISMAN, A.IEEE transactions on engineering management. 1992, Vol 39, Num 1, pp 13-21, issn 0018-9391Article

Differences in surface erosion of silicon wafers annealed in si-loaded , SiC-coated and pure SiC carriersREISMAN, A; TEMPLE, D.Journal of the Electrochemical Society. 1991, Vol 138, Num 5, pp L1-L3, issn 0013-4651Article

Species charge and oxidation mechanism in the cathodic plasma oxidation of siliconKAMAL ELJABALY; REISMAN, A.Journal of the Electrochemical Society. 1991, Vol 138, Num 4, pp 1071-1076, issn 0013-4651, 6 p.Article

Defect centroid, spatial distribution, and areal density in process-induced radiation-damaged IGFETs with gate insulators grown at 1000 and 800°CWALTERS, M; REISMAN, A.Journal of electronic materials. 1990, Vol 19, Num 7, pp 711-720, issn 0361-5235Article

The effects of various gate oxidation conditions on intrinsic and radiation-induced extrinsic charged defects and neutral electron trapsWALTERS, M; REISMAN, A.Journal of the Electrochemical Society. 1990, Vol 137, Num 11, pp 3596-3601, issn 0013-4651Article

1 MU M MOSFET VLSI TECHNOLOGY: PART I-AN OVERVIEWYU HN; REISMAN A; OSBURN CM et al.1979; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 2; PP. 240-246; BIBL. 22 REF.Article

FORECASTING SHORT-TERM DEMAND.REISMAN A; GUDAPATI K; CHANDRASEKARAN R et al.1976; INDUSTR. ENGNG; U.S.A.; DA. 1976; VOL. 8; NO 5; PP. 38-45; BIBL. 3 REF.Article

Stress in cathodic plasma oxides as a function of processing parametersDAUKSHER, W; REISMAN, A.Journal of electronic materials. 1991, Vol 20, Num 1, pp 103-112, issn 0361-5235Article

Low pressure chemical vapor deposition of thin film GeO₂-SiO₂ glassesRASTANI, S; REISMAN, A.Journal of the Electrochemical Society. 1990, Vol 137, Num 4, pp 1288-1296, issn 0013-4651, 9 p.Article

Challenges in advanced semiconductor technology for high-performance and supercomputer applicationsOSBURN, C. M; REISMAN, A.Journal of supercomputing. 1987, Vol 1, Num 2, pp 149-189, issn 0920-8542Article

Electrical properties of amorphous tantalum pentoxide thin films on siliconOEHRLEIN, G. S; REISMAN, A.Journal of applied physics. 1983, Vol 54, Num 11, pp 6502-6508, issn 0021-8979Article

ANOMALOUS ETCH STRUCTURES USING ETHYLENEDIAMINE-PYROCATECHOL-WATER BASED ETCHANTS AND THEIR ELIMINATIONREISMAN A; BERKENBLIT M; MERZ CJ et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 5; PP. 1208; BIBL. 1 REF.Article

Annealing of ionizing radiation induced defects in insulated gate field effect transitors using elevated pressureBRIGHT, R; REISMAN, A.Journal of the Electrochemical Society. 1993, Vol 140, Num 5, pp 1482-1488, issn 0013-4651Article

The effects of ionizing radiation and other processing parameters on stress in thermal oxides grown on siliconDAUKSHER, W; REISMAN, A.Journal of the Electrochemical Society. 1991, Vol 138, Num 10, pp 3112-3120, issn 0013-4651Article

Formation of aluminium oxide films from aluminium hexafluoroacetylacetonate at 350-450° CTEMPLE, D; REISMAN, A.Journal of electronic materials. 1990, Vol 19, Num 9, pp 995-1002, issn 0361-5235Article

The relative stabilities of tungsten hexacarbonyl, silver neodecanoate, some metal acetyl- and hexafluoroacetylacetonates and the thermal properties of the palladium(II) acetonatesPOSTON, S; REISMAN, A.Journal of electronic materials. 1989, Vol 18, Num 4, pp 553-562, issn 0361-5235, 10 p.Article