au.\*:("REKLAITIS A")
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THE CALCULATION OF ELECTRON TRANSIENT RESPONSE IN SEMICONDUCTORS BY THE MONTE CARLO TECHNIQUEREKLAITIS A.1982; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1982; VOL. 88; NO 7; PP. 367-370; BIBL. 7 REF.Article
HIGH FIELD ELECTRON DIFFUSION IN INDIUM ANTIMONIDE.REKLAITIS A.1977; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1977; VOL. 83; NO 2; PP. K121-K124; BIBL. 9 REF.Article
ELECTRON TRANSPORT IN SEMICONDUCTORS IN THE PRESENCE OF IMPACT IONIZATIONREKLAITIS A.1981; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1981; VOL. 42; NO 10; PP. 891-896; BIBL. 12 REF.Article
Microwave radiation by nonequilibrium photoelectrons in semiconductorsREKLAITIS, A.Physics letters. A. 1983, Vol 99, Num 9, pp 450-452, issn 0375-9601Article
DYNAMICAL RESPONSE OF ELECTRONS IN GAAS IN A HIGH ELECTRIC FIELDRAGUOTIS R; REKLAITIS A.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 2; PP. 399-405; ABS. RUS; BIBL. 21 REF.Article
Distribution function instability at non-elastic and interelectronic scatteringREKLAITIS, A.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 5, pp L129-L132, issn 0022-3719Article
DIFFUSION COEFFICIENT OF HOT ELECTRONS IN GAASPOZELA J; REKLAITIS A.1978; SOLID STATE COMMUNIC.; USA; DA. 1978; VOL. 27; NO 11; PP. 1073-1077; BIBL. 26 REF.Article
ELECTRON TRANSPORT PROPERTIES IN GAAS AT HIGH ELECTRIC FIELDSPOZELA J; REKLAITIS A.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 9; PP. 927-933; BIBL. 20 REF.Article
Terahertz-frequency InN/GaN heterostructure-barrier varactor diodes : Heterostructure Terahertz DevicesREKLAITIS, A.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 38, issn 0953-8984, 384202.1-384202.5Article
DRIFT VELOCITY OSCILLATIONS IN N-GAAS AT 77 K.MATULIONIS A; POZELA J; REKLAITIS A et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 31; NO 1; PP. 83-87; ABS. RUSSE; BIBL. 15 REF.Article
MONTE CARLO TREATMENT OF ELECTRON-ELECTRON COLLISIONS.MATULIONIS A; POZELA J; REKLAITIS A et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 10-11; PP. 1133-1137; BIBL. 11 REF.Article
MONTE CARLO CALCULATIONS OF HOT-ELECTRON TRANSIENT BEHAVIOUR IN CDTE AND GAAS.MATULIONIS A; POZELA J; REKLAITIS A et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 35; NO 1; PP. 43-48; ABS. RUSSE; BIBL. 11 REF.Article
Shot noise suppression from independently tunnelled electrons in heterostructuresREKLAITIS, A; REGGLANI, L.Semiconductor science and technology. 1999, Vol 14, Num 2, pp L5-L10, issn 0268-1242Article
Electron intervalley scattering in gallium arsenideMICKEVICIUS, R; REKLAITIS, A.Semiconductor science and technology. 1990, Vol 5, Num 8, pp 805-812, issn 0268-1242, 8 p.Article
Instability of photoexcited electron-hole plasma in short semiconductor structuresJUVENICIUS, D; REKLAITIS, A.Applied physics. A, Solids and surfaces. 1987, Vol 42, Num 1, pp 41-43, issn 0721-7250Article
Streaming plasma instability of photoexcited electrons in semiconductorsGRUZINSKIS, B; REKLAITIS, A.International journal of infrared and millimeter waves. 1983, Vol 4, Num 6, pp 859-875, issn 0195-9271Article
Hot intervalley phonons in GaAsMICKEVICIUS, R; REKLAITIS, A.Journal of physics. Condensed matter (Print). 1990, Vol 2, Num 39, pp 7883-7889, issn 0953-8984, 7 p.Article
Monte Carlo study of nonequilibrium phonon effects in GaAsMICKEVICIUS, R; REKLAITIS, A.Solid state communications. 1987, Vol 64, Num 10, pp 1305-1308, issn 0038-1098Article
Impact-ionized electron-hole plasma instability in GaAsMICKEVICIUS, R; REKLAITIS, A.International journal of infrared and millimeter waves. 1985, Vol 6, Num 3, pp 235-248, issn 0195-9271Article
Current oscillations in semiconductor diodes under streaming instability conditionsGRUZINSKIS, V; REKLAITIS, A.Electronics Letters. 1983, Vol 19, Num 18, pp 733-734, issn 0013-5194Article
Current switching and instability in a heterostructure hot electron diodeREKLAITIS, A; MYKOLAITIS, G.Solid-state electronics. 1994, Vol 37, Num 1, pp 147-152, issn 0038-1101Article
Steady-state electron transport in short GaAs n+-n-n+ structuresGRUZINSKIS, V; REKLAITIS, A.Semiconductor science and technology. 1988, Vol 3, Num 8, pp 754-757, issn 0268-1242Article
Giant suppression of avalanche noise in GaN double-drift impact diodesREKLAITIS, A; REGGIANI, L.Solid-state electronics. 2005, Vol 49, Num 3, pp 405-408, issn 0038-1101, 4 p.Article
Hot phonon effects on impact ionization dynamics in InSbMICKEVICIUS, R; REKLAITIS, A.Solid state communications. 1990, Vol 73, Num 2, pp 145-148, issn 0038-1098Article
Hot phonon effects on electron high-field transport in GaAsMICKEVICIUS, R; REKLAITIS, A.Journal of physics. Condensed matter (Print). 1989, Vol 1, Num 47, pp 9401-9412, issn 0953-8984Article