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A STUDY OF ELECTRON BEAM EXSPOSURE OF POSITIVE RESISTS.ERSOY O.1975; OPTIK; DTSCH.; DA. 1975; VOL. 41; NO 5; PP. 479-487; ABS. ALLEM.; BIBL. 6 REF.Article

TECHNIQUES DE PHOTOGRAVUREBONNEL M.1972; REV. TECH. THOMSON-CSF.; FR.; DA. 1972; VOL. 4; NO 4; PP. 833-856; ABS. ANGL. ALLEM.; BIBL. 4 REF.Serial Issue

UTILISATION DES RESISTS EN MASQUAGE ELECTRONIQUE.DUBEE A.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 15-24; BIBL. 10 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

PHOTORESIST CLEANINGLAMING FP; STRAILE RE.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 2; PP. 292-295; BIBL. 3 REF.Serial Issue

ELECTRON BEAM EXPOSURE OF NEGATIVE RESISTS.ERSOY O.1976; OPTIK; DTSCH.; DA. 1976; VOL. 45; NO 4; PP. 345-353; ABS. ALLEM.; BIBL. 7 REF.Article

HIGH-RESOLUTION NEGATIVE PHOTORESISTWALTERS RM; BRECHER R.1972; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1972; VOL. 119; NO 12; PP. 1703-1708; BIBL. 12 REF.Serial Issue

REDUCTION OF PHOTORESIST STANDING-WAVE EFFECTS BY POST-EXPOSURE BAKE.WALKER EJ.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 7; PP. 464-466; BIBL. 3 REF.Article

TIME EVOLUTION OF DEVELOPED CONTOURS IN POLY-(METHYL METHACRYLATE) ELECTRON RESIST.GREENEICH JS.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 12; PP. 5264-5268; BIBL. 16 REF.Article

EFFET DE LA COMPOSITION CHIMIQUE D'UNE COUCHE PHOTORESISTIVE POSITIVE SUR LA CONTRACTION ET L'ADHESION DES COUCHESKLETCHENKOV II; TEREKHOVA GV.1975; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1975; NO 20; PP. 95-97Article

ELECTRON SCATTERING AND LINE PROFILES IN NEGATIVE ELECTRON RESISTS.HEIDENREICH RD; BALLANTYNE JP; THOMPSON LF et al.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 1284-1288; BIBL. 14 REF.; (SYMP. ELECTRON ION PHOTON BEAM TECHNOL. 13. PROC.; COLORADO SPRINGS; 1975)Conference Paper

CONGRES INTERNATIONAL SUR LES BETONS UTILISANT DES RESINESPATUROEV VV; MATKOV NG; MIKHAJLOV GA et al.1975; BETON I ZHELEZOBETON; S.S.S.R.; DA. 1975; NO 11; PP. 43-44Article

PROBLEME BEIM EINSATZ VON FOTOLACKEN IN DER HALBLEITERINDUSTRIE. = PROBLEME DE L'UTILISATION DE LAQUES PHOTORESISTANCES DANS L'INDUSTRIE DES SEMICONDUCTEURSCAMMERER F.1974; GALVANOTECHNIK; DTSCH.; DA. 1974; VOL. 65; NO 11; PP. 945-949; ABS. ANGL. FRArticle

LICHTEMPFINDLICHE SCHUTZLACKE IN DER MIKROELEKTRONIK = LAQUES DE PROTECTION PHOTOSENSIBLES EN MICROELECTRONIQUEBRUNNER F; POETSCH H; SCHWARZBACH F et al.1972; CHEMIKER-ZTG; DTSCH.; DA. 1972; VOL. 96; NO 10; PP. 552-560; ABS. ANGL.; BIBL. 23 REF.Serial Issue

MODELING PROJECTION PRINTING OF POSITIVE PHOTORESISTS.DILL FH; NEUREUTHER AR; TUTTLE JA et al.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 7; PP. 456-464; BIBL. 6 REF.Article

PHOTORESISTS FOR ELECTRONICS.FREY DW; HRYHORENKO EB.1978; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1978; VOL. 18; NO 1; PP. 104-105Article

PROJECTION PRINTED PHOTOLITHOGRAPHIC IMAGES IN POSITIVE PHOTORESISTS.NARASIMHAM MA.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 7; PP. 478-482; BIBL. 5 REF.Article

CROSS-SECTION PROFILES OF SINGLE-SCAN NEGATIVE ELECTRON-RESIST LINES.LIN LH.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 1289-1293; BIBL. 8 REF.; (SYMP. ELECTRON ION PHOTON BEAM TECHNOL. 13. PROC.; COLORADO SPRINGS; 1975)Conference Paper

POLY (BUTENE-1 SULFONE) - A HIGHLY SENSITIVE POSITIVE RESIST.BOWDEN MJ; THOMPSON LF; BALLANTYNE JP et al.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 1294-1296; BIBL. 9 REF.; (SYMP. ELECTRON ION PHOTON BEAM TECHNOL. 13. PROC.; COLORADO SPRINGS; 1975)Conference Paper

CHOIX D'UN REGIME OPTIMAL DE PHOTOLITHOGRAPHIE POUR LES COMPOSITIONS PHOTORESISTIVES NEGATIVESGUK EG; YURRE TA; SYRIKINA LK et al.1976; ZH. PRIKL. KHIM.; S.S.S.R.; DA. 1976; VOL. 49; NO 3; PP. 543-545; BIBL. 7 REF.Article

PARTICULES DE RESINE ECHANGEUSE D'IONS SUR UNE SURFACE DE SILICIUMEHDEL'MAN FL.1974; MIKROELEKTRONIKA; S.S.S.R.; DA. 1974; VOL. 3; NO 4; PP. 365-369; H.T. 2; BIBL. 9 REF.Article

PHOTORESIST STUDY REVEALS EXPOSURE TIME MORE CRITICAL THAN LIGHT INTENSITY.PARKER JL JR; HOLMES RR.1977; INSULAT. CIRCUITS; U.S.A.; DA. 1977; VOL. 23; NO 10; PP. 31-33Article

THERMAL INACTIVATION OF FUNGAL SPECIES. = INACTIVATION THERMIQUE DES ESPECES FONGIQUESUPSHER FJ.1976; INST. PETROLEUM, PAPER; G.B.; DA. 1976; NO 1; PP. 1-11; BIBL. 2 P.Serial Issue

NOMOGRAMMES POUR LA DETERMINATION DE LA CINETIQUE DU SECHAGE IR DES EMAUX A BASE DES RESINES EPOXYDES ET GLYCEROPHTALIQUESSLOBODKIN LS; KRASNICH SG; KOVALEVSKAYA LA et al.1972; LOKOKRAS. MATER. PRIMEN.; S.S.S.R.; DA. 1972; NO 5; PP. 41-43; BIBL. 8 REF.Serial Issue

CONSTRUCTION, URBANISME ET ARCHITECTURE. BETON DE RESINE. COMPTE RENDU DE MISSION FRANCAISE EN URSS AVRIL 1974PAILLERE AM.1974; BULL. LIAISON LAB. PONTS CHAUSS.; FR.; DA. 1974; NO 74; PP. 55-56Article

DEVELOPER TEMPERATURE EFFECTS ON E-BEAM AND OPTICALLY EXPOSED POSITIVE PHOTORESISTSHAW JM; HATZAKIS M.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 11; PP. 2026-2031; BIBL. 8 REF.Article

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