CROSS-SECTION PROFILES OF SINGLE-SCAN NEGATIVE ELECTRON-RESIST LINES.LIN LH.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 1289-1293; BIBL. 8 REF.; (SYMP. ELECTRON ION PHOTON BEAM TECHNOL. 13. PROC.; COLORADO SPRINGS; 1975)Conference Paper

UTILISATION DES RESISTS EN MASQUAGE ELECTRONIQUE.DUBEE A.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 15-24; BIBL. 10 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

A DRY-ETCHED INORGANIC RESISTCHANG MS; CHEN JT.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 10; PP. 892-895; BIBL. 17 REF.Article

CHOIX D'UN REGIME OPTIMAL DE PHOTOLITHOGRAPHIE POUR LES COMPOSITIONS PHOTORESISTIVES NEGATIVESGUK EG; YURRE TA; SYRIKINA LK et al.1976; ZH. PRIKL. KHIM.; S.S.S.R.; DA. 1976; VOL. 49; NO 3; PP. 543-545; BIBL. 7 REF.Article

THE NATURE OF NEGATIVE PHOTORESIST SCUMMING. II. NO₂ AND OZONE INDUCED SCUMMING.LEON B.1977; SOLID STATE TECHNOL.; U.S.A.; DA. 1977; VOL. 20; NO 5; PP. 58-61; BIBL. 3 REF.Article

LICHTEMPFINDLICHE SCHUTZLACKE IN DER MIKROELEKTRONIK = LAQUES DE PROTECTION PHOTOSENSIBLES EN MICROELECTRONIQUEBRUNNER F; POETSCH H; SCHWARZBACH F et al.1972; CHEMIKER-ZTG; DTSCH.; DA. 1972; VOL. 96; NO 10; PP. 552-560; ABS. ANGL.; BIBL. 23 REF.Serial Issue

LITHOGRAPHY AND RADIATION CHEMISTRY OF EPOXY CONTAINING NEGATIVE ELECTRON RESISTS.THOMPSON LF; FEIT ED; HEIDENREICH RD et al.1974; POLYM. ENGNG SCI.; U.S.A.; DA. 1974; VOL. 14; NO 7; PP. 529-533; BIBL. 10 REF.; (PHOTOPOLYM.: PRINC., PROCESSES MATER. 3RD PHOTOPOLYM. CONF.; ELLENVILLE, N.Y.; 1973)Conference Paper

MICROLITHOGRAPHYDECKERT C.1980; CIRCUITS MANUF.; USA; DA. 1980; VOL. 20; NO 7; PP. 39-54; 13 P.; BIBL. 32 REF.Article

RESIST MATERIALS FOR FINE LINE LITHOGRAPHYBOWDEN MJ; THOMPSON LF.1979; SOLID STATE TECHNOL.; USA; DA. 1979; VOL. 22; NO 5; PP. 72-82; BIBL. 91 REF.Article

A SUPER FINE NEGATIVE TYPE PHOTORESIST OBTAINED BY A NEW PREPARATIVE METHODKATO M; NAKANE H.1979; PHOTOGR. SCI. ENGNG; USA; DA. 1979; VOL. 23; NO 4; PP. 207-213; BIBL. 8 REF.Article

CHEMICALS FOR SEMICONDUCTOR PROCESSINGCLARK KG.1972; ELECTRON., COMPON.; G.B.; DA. 1972; VOL. 13; NO 18; PP. 869-874 (4 P.)Serial Issue

DEEP UV PROJECTION SYSTEMIWAMATSU S; ASANAMI K.1980; SOLID STATE TECHNOL.; USA; DA. 1980; VOL. 23; NO 5; PP. 81-85; BIBL. 4 REF.Article

PHOTORESIST TECHNIQUES IN MICROELECTRONICS.CLARK KG.1975; IN: NON-SILVER PHOTOGR. PROCESSES. PROC. SYMP.; OXFORD; 1973; LONDON; ACAD. PRESS; DA. 1975; PP. 249-273; BIBL. 1 P. 1/2Conference Paper

SENSITIVE CHLORINE-CONTAINING RESISTS FOR X-RAY LITHOGRAPHY.TAYLOR GN; COQUIN GA; SOMEKH S et al.1977; POLYM. ENGNG SCI.; U.S.A.; DA. 1977; VOL. 17; NO 6; PP. 420-429; BIBL. 19 REF.; (PHOTOPOLYM. CONF 4; ELLENVILLE, N.Y.; 1976)Conference Paper

POLYMERIC RESISTS FOR X-RAY LITHOGRAPHY.THOMPSON LF; FEIT ED; BOWDEN MJ et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 11; PP. 1500-1503; BIBL. 16 REF.Article

ETUDE DE POLYMERES ORGANIQUES ET ORGANO-METALLIQUES POUR REALISATION DE GUIDES DE LUMIERE PAR MASQUAGE ELECTRONIQUE.DUBOIS JC.1974; DGRST-7371731; FR.; DA. 1974; PP. 1-15; H.T. 9; BIBL. 2 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report