REDUCTION OF PHOTORESIST STANDING-WAVE EFFECTS BY POST-EXPOSURE BAKE.WALKER EJ.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 7; PP. 464-466; BIBL. 3 REF.Article

TIME EVOLUTION OF DEVELOPED CONTOURS IN POLY-(METHYL METHACRYLATE) ELECTRON RESIST.GREENEICH JS.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 12; PP. 5264-5268; BIBL. 16 REF.Article

EFFET DE LA COMPOSITION CHIMIQUE D'UNE COUCHE PHOTORESISTIVE POSITIVE SUR LA CONTRACTION ET L'ADHESION DES COUCHESKLETCHENKOV II; TEREKHOVA GV.1975; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1975; NO 20; PP. 95-97Article

AUTOMATED PROCESSING OF POSITIVE PHOTORESISTS: SPRAY DEVELOPING FOR LINE SEMICONDUCTORSMACBETH G.1979; CIRCUITS MANUF.; USA; DA. 1979; VOL. 19; NO 4; PP. 50-60; (5 P.); BIBL. 5 REF.Article

CHARACTERIZATION OF POSITIVE PHOTORESIST.DILL FH; HORNBERGER WP; HAUGE PS et al.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 7; PP. 445-452; BIBL. 7 REF.Article

MODELING PROJECTION PRINTING OF POSITIVE PHOTORESISTS.DILL FH; NEUREUTHER AR; TUTTLE JA et al.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 7; PP. 456-464; BIBL. 6 REF.Article

RESIDUES FROM WET PROCESSING OF POSITIVE RESISTSKAPLAN LH; BERGIN BK.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 2; PP. 386-395; BIBL. 10 REF.Article

INCREASING THE FUNCTIONAL SPEED OF POSITIVE PHOTORESISTELLIOTT DJ; DENIS C.1977; COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, MICROELECTRONIQUE, OPTIQUE; FRA; DA. 1977; DGRST-7771946; PP. 229-237; ABS. FREConference Paper

A STUDY OF ELECTRON BEAM EXSPOSURE OF POSITIVE RESISTS.ERSOY O.1975; OPTIK; DTSCH.; DA. 1975; VOL. 41; NO 5; PP. 479-487; ABS. ALLEM.; BIBL. 6 REF.Article

PROJECTION PRINTED PHOTOLITHOGRAPHIC IMAGES IN POSITIVE PHOTORESISTS.NARASIMHAM MA.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 7; PP. 478-482; BIBL. 5 REF.Article

COMPUTER SIMULATION OF EXPOSURE AND DEVELOPMENT OF A POSITIVE PHOTORESISTFUJIMORI S.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 615-623; BIBL. 6 REF.Article

POLY (BUTENE-1 SULFONE) - A HIGHLY SENSITIVE POSITIVE RESIST.BOWDEN MJ; THOMPSON LF; BALLANTYNE JP et al.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 1294-1296; BIBL. 9 REF.; (SYMP. ELECTRON ION PHOTON BEAM TECHNOL. 13. PROC.; COLORADO SPRINGS; 1975)Conference Paper

UTILISATION DES RESISTS EN MASQUAGE ELECTRONIQUE.DUBEE A.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 15-24; BIBL. 10 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

MESURE DE L'INTERVALLE TRANCHE-MASQUE EN PROXIMITY-PRINTINGBERGASSE G; JAOUEN D.1977; COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, MICROELECTRONIQUE, OPTIQUE; FRA; DA. 1977; DGRST-7771946; PP. 119-123; ABS. ENGConference Paper

MODELISATION DES RESINES POSITIVES ET APPLICATION A LA PROJECTION DE STRUCTURES FINES SUR SILICIUMBROCHET A; DUBROEUQ G.1977; COLLOQUE INTERNATIONAL SUR LA MICROLITHOGRAPHIE, MICROELECTRONIQUE, OPTIQUE; FRA; DA. 1977; DGRST-7771946; PP. 239-248; ABS. ENG; BIBL. 11 REF.Conference Paper

DIMENSIONAL CONTROL IN THIN FILM HYBRIDS.SCHANTZ LE.1974; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1974; VOL. 14; NO 4; PP. 76-81 (5P.)Article

PROBLEME BEIM EINSATZ VON FOTOLACKEN IN DER HALBLEITERINDUSTRIE. = PROBLEME DE L'UTILISATION DE LAQUES PHOTORESISTANCES DANS L'INDUSTRIE DES SEMICONDUCTEURSCAMMERER F.1974; GALVANOTECHNIK; DTSCH.; DA. 1974; VOL. 65; NO 11; PP. 945-949; ABS. ANGL. FRArticle

IN SITU CHARACTERIZATION OF POSITIVE RESIST DEVELOPMENTOLDHAM WG.1979; OPT. ENGNG; USA; DA. 1979; VOL. 18; NO 1; PP. 59-62; BIBL. 5 REF.Article

FUNCTIONAL TESTING OF POSITIVE PHOTORESIST FOR MANUFACTURE OF FILM INTEGRATED CIRCUITS.KELLER HN.1978; SOLID STATE TECHNOL.; USA; DA. 1978; VOL. 21; NO 6; PP. 45-53; BIBL. 3 REF.Article

LICHTEMPFINDLICHE SCHUTZLACKE IN DER MIKROELEKTRONIK = LAQUES DE PROTECTION PHOTOSENSIBLES EN MICROELECTRONIQUEBRUNNER F; POETSCH H; SCHWARZBACH F et al.1972; CHEMIKER-ZTG; DTSCH.; DA. 1972; VOL. 96; NO 10; PP. 552-560; ABS. ANGL.; BIBL. 23 REF.Serial Issue

PROCESSING LATITUDE IN PHOTORESIST PATTERNINGDECKERT CA; PETERS DA.1980; SOLID STATE TECHNOL.; USA; DA. 1980; VOL. 23; NO 1; PP. 76-80; BIBL. 7 REF.Article

THEORETICAL MODELING OF THE SIMULTANEOUS EXPOSURE AND DEVELOPMENT (SED) PROCESS OF A POSITIVE PHOTORESIST.TSANG WT.1977; APPL. OPT.; U.S.A.; DA. 1977; VOL. 16; NO 7; PP. 1918-1930; BIBL. 29 REF.Article

POSITIVE TYPE RESISTS FOR MICROFABRICATIONKAKUCHI M; SUGAWARA S; SUKEGAWA K et al.1979; REV. ELECTR. COMMUNIC. LAB.; JPN; DA. 1979; VOL. 27; NO 11-12; PP. 1113-1118; BIBL. 8 REF.Article

PERFORMANCE CHARACTERISTICS OF DIAZO- TYPE PHOTORESISTS UNDER E-BEAM AND OPTICAL EXPOSURESHAW JM; HATZAKIS M.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 4; PP. 425-430; BIBL. 7 REF.Article

MICROLITHOGRAPHYDECKERT C.1980; CIRCUITS MANUF.; USA; DA. 1980; VOL. 20; NO 7; PP. 39-54; 13 P.; BIBL. 32 REF.Article