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Results 1 to 25 of 435548

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POSITIVE RESIST MATERIAL REQUIREMENTS FOR VLSI DEVICE FABRICATION. IIELLIOTT DJ.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 12; PP. 91-95; BIBL. 11 REF.Article

ELIMINATION DES IMPURETES MINERALES DES RESISTANCES PHOTOSENSIBLES PAR LA CATIONITE KU-2 X 8MIRONOV MS; TAUSHKANOV VP; MARKOVA TP et al.1981; Z. PRIKL. HIM.; ISSN 0044-4618; SUN; DA. 1981; VOL. 54; NO 10; PP. 2321-2323; BIBL. 3 REF.Article

DETAILED CONTRAST (GAMMA -VALUE) MEASUREMENTS OF POSITIVE ELECTRON RESISTSHARADA K; TAMAMURA T; KOGURE O et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2576-2580; BIBL. 10 REF.Article

CHARACTERIZATION OF AZ-2415 AS A NEGATIVE ELECTRON RESISTBERKER TD; CASEY DD.1982; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 2; PP. 154-160; BIBL. 7 REF.Article

OPTICAL REQUIREMENTS FOR PROJECTION LITHOGRAPHYOLDHAM WG; SUBRAMANIAN S; NEUREUTHER AR et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 10; PP. 975-980; BIBL. 17 REF.Article

PROFILE SIMULATION OF NEGATIVE RESIST MRS USING THE SAMPLE PHOTOLITHOGRAPHY SIMULATORMATSUZAWA T; KISHIMOTO A; TOMIOKA H et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 3; PP. 58-60; BIBL. 6 REF.Article

DEEP UV1:1 PROJECTION LITHOGRAPHY UTILIZING NEGATIVE RESIST MRSMATSUZAWA T; TOMIOKA H.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1284-1288; BIBL. 8 REF.Article

CHARACTERIZATION OF POSITIVE RESIST DEVELOPMENTO'TOOLE MM; GRANDE WJ.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 12; PP. 311-313; BIBL. 8 REF.Article

POSITIVE RESIST MATERIAL REQUIREMENTS FOR VLSI DEVICE FABRICATIONELLIOTT DJ.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 5; PP. 116-120Article

ENHANCEMENT OF RESIST PLASMA EROSION RATES BY ELECTRON-BEAM HARDENINGMORGAN RA; POLLARD CJ.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 24; PP. 1038-1040; BIBL. 2 REF.Article

LITHOGRAPHIC EVALUATION OF AN O-NITROBENZYL ESTER BASES DEEP U.V. RESIST SYSTEMWILKINS CW JR; REICHMANIS E; CHANDROSS EA et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2552-2555; BIBL. 4 REF.Article

GERMANIUM SELENIDE AS A NEGATIVE INORGANIC RESIST FOR ION BEAM MICROFABRICATIONBALASUBRAMANYAM K; ADESIDA I; RUOFF AL et al.1983; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1983; VOL. 14; NO 1; PP. 35-42; BIBL. 23 REF.Article

PLASMA FORMATION OF BUFFER LAYERS FOR MULTILAYER RESIST STRUCTURESDOBKIN DM; CANTOS BD.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 9; PP. 222-224; BIBL. 10 REF.Article

REACTIVE ION ETCHING RESISTANT NEGATIVE RESISTS FOR ION BEAM LITHOGRAPHYWADA Y; MOCHIJI K; OBAYASHI H et al.1983; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1983; VOL. 130; NO 1; PP. 187-190; BIBL. 11 REF.Article

CHARACTERIZATION OF AZ-2415 AS A NEGATIVE ELECTRON RESISTBERKER TD; CASEY DD.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 524-530; BIBL. 7 REF.Article

CMS GIVES IMPACT ON DRY ETCHING PROCESS IN VLSI PRODUCTIONFUKUDA M.1982; JEE, J. ELECTRON. ENG.; ISSN 0385-4507; JPN; DA. 1982; VOL. 19; NO 188; PP. 40-43; BIBL. 10 REF.Article

MASK CONSIDERATIONS IN THE PLASMA ETCHING OF ALUMINUMTRACY CJ; MATTOX R.1982; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1982; VOL. 25; NO 6; PP. 83-88; BIBL. 13 REF.Article

A DRY DEVELOPMENT MODEL FOR A POSITIVE ELECTRON BEAM RESISTYAMADA M; HATTORI S; MORITA S et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 11; PP. 2598-2602; BIBL. 22 REF.Article

PROXIMITY FUNCTION CALCULATION OF PATTERNS IN POSITIVE ELECTRON RESISTSBRANDT J; LAI JH; SHEPHERD LT et al.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 5; PP. 813-822; BIBL. 12 REF.Article

A NEW PACKAGE-RELATED FAILURE MECHANISM FOR LEADLESS CERAMIC CHIP CARRIERS (LC-3S) SOLDER-ATTACHED TO ALUMINA SUBSTRATESHOWARD RT; SOBECK SW; SANETRA C et al.1983; SOLID STATE TECHNOLOGY; ISSN 0038-111X; USA; DA. 1983; VOL. 26; NO 2; PP. 115-122; BIBL. 16 REF.Article

DEEP UV PHOTORESISTS. I. MELDRUM'S DIAZO SENSITIZERGRANT BD; CLECAK NJ; TWIEG RJ et al.1981; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 11; PP. 1300-1305; BIBL. 19 REF.Article

CHOIX DE LA RESISTANCE OPTIMALE DE CHARGE DES PHOTORESISTANCESSERGEEV SZ.1981; OPT.-MEH. PROM.; ISSN 0030-4042; SUN; DA. 1981; NO 5; PP. 50-51; BIBL. 5 REF.Article

ELECTRON BEAM LITHOGRAPHYPEASE RFW.1981; CONTEMP. PHYS.; ISSN 0010-7514; GBR; DA. 1981; VOL. 22; NO 3; PP. 265-290; BIBL. 51 REF.Article

CHLOROMETHYLATED POLYSTYRENE AS DEEP UV AND X-RAY RESISTIMAMURA S; SUGAWARA S.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 5; PART. 1; PP. 776-782; BIBL. 21 REF.Article

PROXIMITY-EFFECT CORRECTION FOR NEGATIVE RESIST IN ELECTRON BEAM LITHOGRAPHYMACHIDA Y; FURUYA S; NAKAYAMA N et al.1983; FUJITSU SCIENTIFIC AND TECHNICAL JOURNAL; ISSN 0016-2523; JPN; DA. 1983; VOL. 19; NO 1; PP. 21-32; BIBL. 9 REF.Article

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