ON THE CALCULATION OF SPREADING RESISTANCE CORRECTION FACTORS.CHOO SC; LEONG MS; KUAN KL et al.1976; SOLID. STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 561-565; BIBL. 8 REF.Article

SEMICONDUCTOR MEASUREMENT TECHNOLOGY. SPREADING RESISTANCE SYMPOSIUM. PROCEEDINGS; GAITHERSBURG, MD.; 1974.1974; NATION. BUR. STAND., SPEC. PUBL.; U.S.A.; DA. 1974; NO 400-10; PP. (290P.); BIBL. 2 P. 1/2Conference Paper

SIMPLE S-PARAMETER MEASUREMENT OF BASE SPREADING RESISTANCEUNWIN RT; KNOTT KF.1980; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1980; VOL. 11; NO 6; PP. 18-20; BIBL. 4 REF.Article

A MULTILAYER CORRECTION SCHEME FOR SPREADING RESISTANCE MEASUREMENTS.CHOO SC; LEONG MS; HONG HL et al.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 10; PP. 839-848; BIBL. 10 REF.Article

SPREADING RESISTANCE CALCULATIONS FOR GRADED STRUCTURES BASED ON THE UNIFORM FLUX SOURCE BOUNDARY CONDITION.LEONG MS; CHOO SC; WANG CC et al.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 3; PP. 255-264; BIBL. 13 REF.Article

MESURE DE LA RESISTANCE DIFFUSE DU COLLECTEUR DU TRANSISTOR BIPOLAIREPIETRENKO W; WILAMOWSKI BM.1976; ROZPR. ELEKTROTECH.; POLSKA; DA. 1976; VOL. 22; NO 4; PP. 803-812; ABS. ANGL. FR. ALLEM. RUSSE; BIBL. 8 REF.Article

COMPARISON OF NOISE-MEASURED AND THEORETICAL VALUE OF BASE SPREADING RESISTANCE FOR AN INTERDIGITATED TRANSISTOR.KNOTT KF; UNWIN RT.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 7; PP. 147-148; BIBL. 6 REF.Article

COMPARISON OF SPREADING RESISTANCE CORRECTION FACTOR ALGORITHMS USING MODEL DATAALBERS J.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 12; PP. 1197-1205; BIBL. 16 REF.Article

CORRECTION OF SPREADING RESISTANCE DATA OBTAINED FROM BEVELLED SHALLOW JUNCTIONSABBASI SA; BRUNNSCHWEILER A.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 13; PP. 507-508; BIBL. 5 REF.Article

SPREADING RESISTANCE OF MULTIPLE-LAYER CYLINDRICAL STRUCTURESBROOK P; SMITH JG.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 11; PP. 253-254; BIBL. 3 REF.Serial Issue

THE INFLUENCE OF TEMPERATURE ON SPREADING RESISTANCE MEASUREMENTKRAMER P; VAN RUYVEN K.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 7; PP. 757-766; BIBL. 24 REF.Serial Issue

THE ROLE OF SOURCE BOUNDARY CONDITION IN SPREADING RESISTANCE CALCULATIONSLEONG MS; CHOO SC; TAN LS et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 7; PP. 933-941; BIBL. 7 REF.Article

DEPENDANCE DE LA RESISTANCE ELECTRIQUE D'ETALEMENT A L'EGARD DE LA CHARGE APPLIQUEE A LA SONDE DE MESUREMALYSHEV VA; GUSAKOV NI; SIL'VANSKAYA OV et al.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 5; PP. 271; BIBL. 3 REF.Article

APPLICATION DE LA METHODE DE RESISTANCE D'ETALEMENT, AU CONTROLE DE LA RESISTIVITE ET DE L'EPAISSEUR DES COUCHES EPITAXIQUES DANS LES MATERIAUX SEMICONDUCTEURSMALYSHEV VA.1979; PRIBORY TEKH. EKSPER.; SUN; DA. 1979; NO 1; PP. 218-220; BIBL. 5 REF.Article

EFFECT OF ULTRASONIC VIBRATIONS ON INSB PULLED CRYSTALSHAYAKAWA Y; SONE Y; TATSUMI K et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 9; PART. 1; PP. 1273-1277; BIBL. 10 REF.Article

SPREADING RESISTANCE ANALYSIS FOR SILICON LAYERS WITH NONUNIFORM RESISTIVITYDICKEY DH; EHRSTEIN JR.1979; NATION. BUR. STAND., SPEC. PUBL.; USA; DA. 1979; NO 400-48; 65 P.; BIBL. 12 REF.Serial Issue

CORRECTION FACTOR FOR RESISTIVITY AND HALL MOBILITY MEASUREMENT OF TWO LAYER STRUCTURES BY SPREADING RESISTANCE TECHNIQUES.GUTAI L; VICSEK T.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 1; PP. 93-97; BIBL. 11 REF.Article

DETERMINATION OF GALVANOMAGNETIC COEFFICIENTS BY A ONE-POINT METHODGUTAI L.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 3; PP. 395-406; BIBL. 14 REF.Serial Issue

THE SPREADING RESISTANCE OF AN INHOMOGENEOUS SLAB WITH A DISC ELECTRODE AS A MIXED BOUNDARY VALUE PROBLEMLEONG MS; CHOO SC; TAN LS et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 6; PP. 527-531; BIBL. 11 REF.Article

EFFECTS OF THE DIFFUSED IMPURITY PROFILE ON THE DC CHARACTERISTICS OF VMOS AND DMOS DEVICES.D'AVANZO DC; COMBS SR; DUTTON RW et al.1977; I.E.E.E.J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 4; PP. 356-362; BIBL. 10 REF.Article

MESURE DES PROFILS DE DOPAGE SUR DES COUCHES EPITAXIQUES CONSTITUEES PAR GAASFRANK H; KORDOS P.1975; ELEKTROTECH. CAS.; CESKOSL.; DA. 1975; VOL. 26; NO 2; PP. 92-101; ABS. RUSSE ALLEM. ANGL.; BIBL. 6 REF.Article

Incorporation of a resistivity-dependent contact radius in an accurate integration algorithm for spreading resistance calculationsPIESSENS, R; VANDERVORST, W. B; MAES, H. E et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 2, pp 468-474, issn 0013-4651Article

The relation between two-probe and four-probe resistances on nonuniform structuresALBERS, J; BERKOWITZ, H. L.Journal of the Electrochemical Society. 1984, Vol 131, Num 2, pp 392-398, issn 0013-4651Article

EXTREMELY UNIFORM ELECTRODEPOSITION OF SUBMICRON SCHOTTKY CONTACTS = DEPOT ELECTROLYTIQUE EXTREMEMENT UNIFORME DE CONTACTS DE SCHOTTKY SUBMICROSCOPIQUESMCCOLL M; CHASE AB; GARBER WA et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 12; PP. 8254-8256; BIBL. 11 REF.Article

An efficient numerical scheme for spreading resistance calculations based on the variational methodCHOO, S. C; LEONG, M. S; SIM, J. H et al.Solid-state electronics. 1983, Vol 26, Num 8, pp 723-730, issn 0038-1101Article