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CHANNELING ION IMPLANTATION THROUGH PALLADIUM FILMS. = IMPLANTATION D'IONS PAR CANALISATION A TRAVERS DES COUCHES DE PALLADIUMISHIWARA H; FURUKAWA S.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 1374-1377; BIBL. 8 REF.; (SYMP. ELECTRON ION PHOTON BEAM TECHNOL. 13. PROC.; COLORADO SPRINGS; 1975)Conference Paper

A STUDY OF 2 MEV HELIUM-IRRADIATED PHOSPHORUS-DIFFUSED SILICON.ALLEN CR; BICKNELL RW.1974; PHILOS. MAG.; G.B.; DA. 1974; VOL. 30; NO 3; PP. 483-500; BIBL. 1 P.Article

THE USE OF GOLD AS A BACKSCATTER ABSORBER IN MULTIDIMENSIONAL GAMMA-RAY SPECTROMETERSBRODZINSKI RL.1973; RADIOCHEM. RADIOANAL. LETTERS; SWITZ.; DA. 1973; VOL. 13; NO 5-6; PP. 375-380; BIBL. 7 REF.Serial Issue

REMOTE MEASUREMENT OF RAINFALL RATE BY RADAR: A CONCEPTMOTT DL.1982; J. APPL. METEOROL.; ISSN 0021-8952; USA; DA. 1982; VOL. 21; NO 8; PP. 1194-1195; BIBL. 5 REF.Article

RETRODIFFUSION D'IONS DE GAZ RARES DE FAIBLE ENERGIE PAR LA SURFACE D'UN SOLIDE: MECANISMES FONDAMENTAUX ET APPLICATION A LA DETERMINATION DES STRUCTURES CRISTALLINES DE SURFACETHEETEN JB; BRONGERSMA HH.1976; REV. PHYS. APPL.; FR.; DA. 1976; VOL. 11; NO 1; PP. 57-63; ABS. ANGL.; BIBL. 19 REF.; (METHODES ACTUELLES ANAL. SOLIDES. COLLOQ. EXPO. COMMUN.; DIJON; 1975)Conference Paper

A GAMMA BACKSCATTER METHOD OF MEASURING SOIL DENSITYDADDI L.1973; INTERNATION. J. APPL. RAD. ISOTOPES; G.B.; DA. 1973; VOL. 24; NO 5; PP. 295; BIBL. 8 REF.Serial Issue

ANALYSIS OF ARSENIC RANGE DISTRIBUTIONS IN SILICON.SIGMON TW; CHU WK; MUELLER H et al.1974; APPL. PHYS.; GERM.; DA. 1974; VOL. 5; NO 4; PP. 347-350; BIBL. 20 REF.Article

OPTIMIZING COPPER SPHERES FOR PRECISION CALIBRATION OF HYDROACOUSTIC EQUIPMENTFOOTE KG.1982; J. ACOUST. SOC. AM.; ISSN 0001-4966; USA; DA. 1982; VOL. 71; NO 3; PP. 742-747; BIBL. 39 REF.Article

DETERMINING OPTIMUM CONDITIONS FOR MEASURING BY GAMMA-RAY BACKSCATTERINGSEDA J; MUSILEK L.1972; ISOTOPENPRAXIS; DTSCH.; DA. 1972; VOL. 8; NO 11-12; PP. 440-444; ABS. ALLEM. RUSSE; BIBL. 5 REF.Serial Issue

THEORETICAL AND EXPERIMENTAL STUDY OF HIGH FLUENCE GERMANIUM IMPLANTATION INTO SILICON. CONTRIBUTION OF ATOMIC MIXINGGRAS MARTI A; JIMENEZ RODRIGUEZ JJ; PEON FERNANDEZ J et al.1982; VACUUM; ISSN 0042-207X; GBR; DA. 1982; VOL. 32; NO 7; PP. 433-437; BIBL. 30 REF.Article

BACKSCATTERING COEFFICIENTS CALCULATION OF MONOENERGETIC ELECTRONS AND POSITRONS.KUZMINIKH VA; VOROBIEV SA.1975; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1975; VOL. 129; NO 2; PP. 561-563; BIBL. 7 REF.Article

ION CHANNELING IN NATURAL DIAMOND. MINIMUM YIELDSDERRY TE; FEARICK RW; SELLSCHOP JPF et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 7; PP. 3675-3680; BIBL. 41 REF.Article

DISTRIBUTIONS OF VOLUME SCATTERING OBSERVED WITH AN 87.5-KHZ SONARGREENBLATT P.1982; J. ACOUST. SOC. AM.; ISSN 0001-4966; USA; DA. 1982; VOL. 71; NO 4; PP. 879-885; BIBL. 22 REF.Article

LOW TEMPERATURE ANNEALING BEHAVIOR OF SE-IMPLANTED GAAS STUDIED BY HIGH RESOLUTION RUTHERFORD BACKSCATTERING CHANNELINGBHATTACXHARYA RS; PRONKO PP; LING SC et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART. 1; PP. 1804-1806; BIBL. 4 REF.Article

MEASUREMENTS OF THE BACKSCATTER MATRIX OF DIELECTRIC BODIESALLAN LE; MCCORMICK GC.1980; IEEE. TRANS. ANTENNAS PROPAG.; USA; DA. 1980; VOL. 28; NO 2; PP. 166-169; BIBL. 2 REF.Article

THICKNESS DISTRIBUTION DETERMINATION OF THIN SPUTTERED TOP LAYERS ON BULK METAL COLLECTORS BY ELECTRON BACKSCATTERING.ERLENWEIN P; HOHN FJ; NIEDRIG H et al.1977; OPTIK; DTSCH.; DA. 1977; VOL. 49; NO 3; PP. 357-363; ABS. ALLEM.; BIBL. 18 REF.Article

FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATESHIRAKI A; LUGUJJO E; MAYER JW et al.1972; J. APPL. PHYS.; U.S.A.; DA. 1972; VOL. 43; NO 9; PP. 3643-3649; BIBL. 13 REF.Serial Issue

ANALYTISCHE CHARAKTERISIERUNG VON STOFFEN DURCH STREUUNG VON GELADENEN TEILCHEN = CARACTERISATION ANALYTIQUE DES SUBSTANCES PAR DIFFUSION DE PARTICULES CHARGEESKRIVAN V.1972; Z. (FRESENIUS') ANAL. CHEM.; DTSCH.; DA. 1972; VOL. 262; NO 1; PP. 1-28; ABS. ANGL.; BIBL. 3 P. 1/2Serial Issue

SUBSTITUTIONAL SOLID SOLUBILITY LIMITS DURING SOLID PHASE EPITAXY OF ION IMPLANTED (100) SILICONWILLIAMS JS; ELLIMAN RG.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 3; PP. 266-268; BIBL. 16 REF.Article

AMBIGUITIES IN REGGE ANALYSES OF BACKWARD SCATTERINGSTORROW JK; WINBOW GA.1973; NUCL. PHYS., B; NETHERL.; DA. 1973; VOL. 54; NO 2; PP. 560-572; BIBL. 23 REF.Serial Issue

USE OF BACKSCATTERING IN ELEMENTAL ANALYSISANTTILA A; KAIRENTO AL; PIIPARINEN M et al.1972; INTERNATION. J. APPL. RAD. ISOTOPES; G.B.; DA. 1972; VOL. 23; NO 7; PP. 315-320; ABS. FR. RUSSE ALLEM.; BIBL. 9 REF.Serial Issue

ELEKTRONENRUECKSTREUMESSUNGEN AN DUENNEN SCHICHTEN AUF MASSIVEN TRAEGERSUBSTANZEN. = RETRODIFFUSION DES ELECTRONS PAR DES COUCHES MINCES SUR DES MATERIAUX VOLUMIQUESHOHN FJ; KINDT M; NIEDRIG H et al.1976; OPTIK; DTSCH.; DA. 1976; VOL. 46; NO 4; PP. 491-500; ABS. ANGL.; BIBL. 23 REF.Article

COMMENTS ON "ACOUSTIC BACKSCATTERING FROM A ROUGH SURFACE AT EXTREMELY LOW GRAZING ANGLES".HALL M.1974; J. ACOUST. SOC. AMER.; U.S.A.; DA. 1974; VOL. 56; NO 6; PP. 1902-1904; BIBL. 8 REF.Article

DIRECT OBSERVATION OF BACKSCATTER ELECTRON DISTRIBUTIONS ON SURFACESHEIDENREICH RD; THOMPSON LF.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 6; PP. 279-281; BIBL. 4 REF.Serial Issue

ION BEAM ANNEALED AS+ IMPLANTED SILICONHEMMENT PLF; MAYDELL ONDRUSZ E; SCOVELL PD et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 2; PP. 57-59; BIBL. 9 REF.Article

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