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ANGULAR DEPENDENCE OF THE BACKSCATTERING YIELD FROM SCI CRYSTALS IN DOUBLE AND SINGLE ALIGNMENT.MORITA K.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 28; NO 1-2; PP. 65-75; BIBL. 20 REF.Article

APPLICATION DE LA RETRODIFFUSION D'IONS HE+ CANALISES A L'ETUDE DES SURFACES APRES ATTAQUE IONIQUE.JOUBERT P; BERTHOU L; GUIVARC'H A et al.1975; VIDE; FR.; DA. 1975; VOL. 30; NO 180; PP. 210-213; ABS. ANGL.; BIBL. 12 REF.Article

EFFECT OF PLANAR OSCILLATIONS ON IMPLANTED DISTRIBUTIONS MEASURED BY LOW-ANGLE HE+ BACKSCATTERING.WAGH AG; WILLIAMS JS.1978; PHYS. LETTERS, A; NETHERL.; DA. 1978; VOL. 65; NO 2; PP. 175-176; BIBL. 8 REF.Article

NITROGEN CENTERS IN GAP PRODUCED BY HOT IMPLANTATION.SHIMADA T; SHIRAKI Y; KOMATSUBARA KF et al.1976; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1976; VOL. 37; NO 3; PP. 315-319; BIBL. 8 REF.Article

ANALYSIS OF THIN FILMS ON GLASS BY NUCLEAR TECHNIQUES.GOTTARDI V; RACCANELLI A; DELLA MEA G et al.1976; GLASS TECHNOL.; G.B.; DA. 1976; VOL. 17; NO 1; PP. 26-30; ABS. FR. ALLEM.; BIBL. 6 REF.Article

SOLID-PHASE EPITAXIAL GROWTH OF SI THROUGH PALLADIUM SILICIDE LAYERS.CANALI C; CAMPISANO SU; LAU SS et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 7; PP. 2831-2836; BIBL. 16 REF.Article

DISTRIBUTION ACCROSS THE CHANNEL OF DEFECTS INDUCED BY NITROGEN BOMBARDMENT IN SILICON.BAERI P; CAMPISANO SU; CIAVOLA G et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 1; PP. 9-11; BIBL. 14 REF.Article

BACKSCATTERING STUDY AND THEORETICAL INVESTIGATION OF PLANAR CHANNELING PROCESSES. I. EXPERIMENTAL RESULTSABEL F; AMSEL G; BRUNEAUX M et al.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO NO 11; PP. 4617-4627; BIBL. 26 REF.Article

BACKSCATTERING ANALYSIS OF THE COMPOSITION OF SILICON-NITRIDE FILMS DEPOSITED BY RF REACTIVE SPUTTERING.MOGAB CJ; LUGUJJO E.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1302-1309; BIBL. 24 REF.Article

CHANNELING ION IMPLANTATION THROUGH PALLADIUM FILMS. = IMPLANTATION D'IONS PAR CANALISATION A TRAVERS DES COUCHES DE PALLADIUMISHIWARA H; FURUKAWA S.1975; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 1374-1377; BIBL. 8 REF.; (SYMP. ELECTRON ION PHOTON BEAM TECHNOL. 13. PROC.; COLORADO SPRINGS; 1975)Conference Paper

DEPTH DISTRIBUTIONS OF SILVER IONS IMPLANTED IN SI AND SIO2.BARCZ A; TUROS A; WIELUNSKI L et al.1975; RAD. EFFECTS; G.B.; DA. 1975; VOL. 25; NO 2; PP. 91-96; BIBL. 8 REF.Article

THE SCATTERING OF 2 MEV HE+ IN AMORPHOUS GERMANIUM.HALE JA; STEPHENS GA.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 33; NO 1; PP. 29-34; BIBL. 12 REF.Article

INFLUENCE OF THERMAL HISTORY ON THE RESIDUAL DISORDER IN IMPLANTED <III> SILICON.CSEPREGI L; CHU WK; MULLER H et al.1976; RAD. EFFECTS; G.B.; DA. 1976; VOL. 28; NO 3-4; PP. 227-233; BIBL. 14 REF.Article

INTERACTION OF AL LAYERS WITH POLYCRISTALLINE SI.NAKAMURA K; NICOLET MA; MAYER JW et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 11; PP. 4678-4684; BIBL. 17 REF.Article

RETRODIFFUSION D'IONS DE GAZ RARES DE FAIBLE ENERGIE PAR LA SURFACE D'UN SOLIDE: MECANISMES FONDAMENTAUX ET APPLICATION A LA DETERMINATION DES STRUCTURES CRISTALLINES DE SURFACETHEETEN JB; BRONGERSMA HH.1976; REV. PHYS. APPL.; FR.; DA. 1976; VOL. 11; NO 1; PP. 57-63; ABS. ANGL.; BIBL. 19 REF.; (METHODES ACTUELLES ANAL. SOLIDES. COLLOQ. EXPO. COMMUN.; DIJON; 1975)Conference Paper

INFLUENCE OF AN OXIDIZING ANNEALING AMBIENT ON THE DISTRIBUTION OF AS, SB, AND GA IMPLANTED INTO SILICON.MULLER H; GYULAI J; CHU WK et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 9; PP. 1234-1238; BIBL. 16 REF.Article

KINETICS OF THE INITIAL STAGE OF SI TRANSPORT THROUGH PD-SILICIDE FOR EPITAXIAL GROWTH.LIAU ZL; CAMPISANO SU; CANALI C et al.1975; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1975; VOL. 122; NO 12; PP. 1696-1699; BIBL. 9 REF.Article

ON THE PHASE TRANSITION-LIKE STRUCTURE CHANGE OF DISORDERED LATTICE STATE OF GAP.KOMATSUBARA KF; SHIMADA T.1975; PROGR. THEOR. PHYS., SUPPL.; JAP.; DA. 1975; NO 57; PP. 60-67; BIBL. 5 REF.Article

CHANNELING EFFECT MEASUREMENTS IN SI BY USING RESONANT NUCLEAR BACKSCATTERING OF 18-19-MEV ALPHA PARTICLESKUDO H; TAKITA K; MASUDA K et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 6; PP. 4322-4324; BIBL. 5 REF.Article

LOCATION OF SELF-INTERSTITIAL ATOMS IN BORON-IMPLANTED SILICON BY MEANS OF RUTHERFORD BACKSCATTERING OF CHANNELLED IONSGOETZ G; SOMMER G.1979; RAD. EFFECTS; GBR; DA. 1979; VOL. 41; NO 4; PP. 195-202; BIBL. 21 REF.Article

REFRACTIVE INDEX PROFILES AND RANGE DISTRIBUTIONS OF SILICON IMPLANTED WITH HIGH-ENERGY NITROGENHUBLER GK; MALMBERG PR; SMITH TP III et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 11 PART. 1; PP. 7147-7155; BIBL. 35 REF.Article

CHANNELING AND RHEED ANALYSES OF PB-IMPLANTATION IN SILICON.CAMPISANO SU; CIAVOLA G; VITALI G et al.1978; APPL. PHYS.; GERM.; DA. 1978; VOL. 15; NO 2; PP. 233-237; BIBL. 9 REF.Article

SPATIALLY VARIED ACTIVATION OF ION-IMPLANTED AS DURING THE REGROWTH OF AMORPHOUS LAYERS IN SI.OHMURA Y; INOUE T; YAMAMOTO Y et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 6; PP. 3597-3599; BIBL. 8 REF.Article

STRUCTURE OF HYDROGEN CENTER IN D-IMPLANTED SIPICRAUX ST; VOOK FL.1978; PHYS. REV. B; USA; DA. 1978; VOL. 18; NO 5; PP. 2066-2077; BIBL. 28 REF.Article

THE FORMATION OF NISI FROM NI2SI STUDIED WITH A PLATINUM MARKERFINSTAD TG; MAYER JW; NICOLET MA et al.1978; THIN SOLID FILMS; NLD; DA. 1978; VOL. 51; NO 3; PP. 391-394; BIBL. 11 REF.Article

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