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Results 1 to 13 of 13

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PLANAR ZN DIFFUSION IN INP.REZEK EA; WRIGHT PD; HOLONYAK N JR et al.1978; SOLID-STATE ELECTRON.; G.B.; DA. 1978; VOL. 21; NO 2; PP. 325-329; BIBL. 15 REF.Article

BANDFILLING IN LIQUID PHASE EPITAXIAL INP-IN1-XGAXP1-ZASZ-INP QUANTUM-WELL HETEROSTRUCTURE LASERSREZEK EA; VOJAK BA; HOLONYAK N JR et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 11; PP. 5398-5403; BIBL. 14 REF.Article

LATTICE MATCHING AND DISLOCATIONS IN LPEIN1-XGAXP1-ZASZ-INP HETEROJUNCTIONS.WRIGHT PD; REZEK EA; HOLONYAK N JR et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 41; NO 2; PP. 254-261; BIBL. 29 REF.Article

COMPOSITIONAL INHOMOGENEITY OF LIQUID PHASE EPITAXIAL INGAPAS LAYERS OBSERVED DIRECTLY IN PHOTOLUMINESCENCEREZEK EA; VOJAK BA; CHIN R et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 9; PP. 744-746; BIBL. 16 REF.Article

SINGLE AND MULTIPLE THIN-LAYER (LZ<400A) IN1-XGA1-ZASZ-INP HETEROSTRUCTURE LIGHT EMITTERS AND LASERS (LAMBDA EQUIV. A 1.1 MU M, 77OK).REZEK EA; HOLONYAK N JR; VOJAK BA et al.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 1; PP. 69-74; BIBL. 15 REF.Article

VARIATION OF EFFECTIVE INDEX OF REFRACTION IN A DOUBLE-HETEROJUNCTION LASER (IN1-XGAXP1-ZASZ).WRIGHT PD; REZEK EA; LUDOWISE MJ et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 5; PP. 2091-2092; BIBL. 10 REF.Article

PHONON-ASSISTED RECOMBINATION IN A MULTIPLE-QUANTUM-WELL LPE INP-IN1-XGAXP1-2AS2 HETEROSTRUCTURE LASERREZEK EA; CHIN R; HOLONYAK N JR et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 1; PP. 45-47; BIBL. 9 REF.Article

TUNNEL INJECTION AND PHONON-ASSISTED RECOMBINATION IN MULTIPLE QUANTUM-WELL ALXGA1-XAS-GAAS P-N HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONVOJAK BA; HOLONYAK N JR; CHIN R et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 9; PP. 5835-5840; BIBL. 14 REF.Article

DEFECT- AND PHONON-ASSISTED TUNNELING IN LPE IN1-XGAXP1-ZASZ DH LASER DIODES (LAMBDA EQUIV. A 1 MU M).LUDOWISE MJ; HOLONYAK N JR; WRIGHT PD et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 10; PP. 4287-4291; BIBL. 27 REF.Article

QUANTUM-WELL INP-IN1-XGAXP1-ZASZ HETEROSTRUCTURE LASERS GROWN BY LIQUID PHASE EPITAXY (LPE)REZEK EA; CHIN R; HOLONYAK N JR et al.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 1; PP. 1-27; BIBL. 29 REF.Article

ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA1-XALXAS-GAAS LASER DIODES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION.DUPUIS RD; DAPKUS PD; HOLONYAK N JR et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 5; PP. 295-297; BIBL. 16 REF.Article

CONTINUOUS ROOM-TEMPERATURE PHOTOPUMPED LASER OPERATION OF VISIBLE-SPECTRUM LPE IN1-XGAXP1-ZASZ (LAMBDA EQUIV. A 6700 A)KIRCHOEFER SW; REZEK EA; VOJAK BA et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 2; PP. 161-166; BIBL. 28 REF.Article

THIN-LAYER LIQUID PHASE EPITAXY OF INGAPAS HETEROSTRUCTURES IN SHORT INTERVALS (<100 MS): NON-DIFFUSION-LIMITED CRYSTAL GROWTHREZEK EA; VOJAK BA; CHIN R et al.1981; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1981; VOL. 10; NO 1; PP. 255-285; BIBL. 44 REF.Article

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