THERMAL GENERATION OF CARRIERS IN GOLD-DOPED SILICONRICHOU F; PELOUS G; LECROSNIER D et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 12; PP. 6252-6257; BIBL. 29 REF.Article

SELENIUM IMPLANTATION INTO SILICON STUDIED BY DLTS TECHNIQUE.RICHOU F; PELOUS G; LECROSNIER D et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 8; PP. 525-527; BIBL. 8 REF.Article

INFLUENCE OF PHOSPHORUS-INDUCED POINT DEFECTS ON A GOLD-GETTERING MECHANISM IN SILICONLECROSNIER D; PAUGAM J; RICHOU F et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 1036-1038; BIBL. 13 REF.Article

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GOLD GETTERING IN SILICON BY PHOSPHOROUS DIFFUSION AND ARGON IMPLANTATION: MECHANISMS AND LIMITATIONSLECROSNIER D; PAUGAM J; PELOUS G et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5090-5097; BIBL. 38 REF.Article

N-CHANNEL MISFETS ON SEMI-INSULATING INP FOR LOGIC APPLICATIONSHENRY L; LECROSNIER D; L'HARIDON H et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 2; PP. 102-103; BIBL. 5 REF.Article

Appui à l'organisation des services d'imagerie : Dispositif de déploiement, rapport final et retours d'expériencesRICHOU, F; WOYNAR, S; LESPEGAGNE, D et al.2009, 109 p.Book

The role of plasma oxide in InP MIS structuresCARMONA, R; FARRÉ, J; LECROSNIER, D et al.Revue de physique appliquée. 1984, Vol 19, Num 2, pp 155-159, issn 0035-1687Article