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Refractive indices and thicknesses of optical waveguides fabricated by silicon ion implantation into silica glassGAZECKI, J; KUBICA, J. M; ZAMORA, M et al.Thin solid films. 1999, Vol 340, Num 1-2, pp 233-236, issn 0040-6090Article

The origin of the ∼0.75 eV photoluminescence emission band in ion-implanted InPTHOMPSON, T. D; BARBARA, J; RIDGWAY, M. C et al.Journal of applied physics. 1992, Vol 71, Num 12, pp 6073-6078, issn 0021-8979Article

Ion beam induced epitaxial crystallization of NiSi2RIDGWAY, M. C; ELLIMAN, R. G; WILLIAMS, J. S et al.Applied physics letters. 1990, Vol 56, Num 21, pp 2117-2119, issn 0003-6951Article

Swift heavy ion irradiation of Pt nanocrystals: II. Structural changes and H desorptionGIULIAN, R; ARAUJO, L. L; KLUTH, P et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 15, issn 0022-3727, 155402.1-155402.7Article

Strain reduction in the Si overlayer for improved SIMOX materialELLINGBOE, S. L; RIDGWAY, M. C.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 29, Num 1-3, pp 29-33, issn 0921-5107Conference Paper

Electrical activation of group-IV elements at MeV energies in InPRIDGWAY, M. C; JAGADISH, C; THOMPSON, T. D et al.Journal of applied physics. 1992, Vol 71, Num 4, pp 1708-1712, issn 0021-8979Article

Epitaxial recrystallization of ion-implanted CoSi2RIDGWAY, M. C; ELLIMAN, R. G; WILLIAMS, J. S et al.Applied surface science. 1991, Vol 53, pp 260-263, issn 0169-4332Conference Paper

Rapid thermal annealing of shallow Sb-implanted SiRIDGWAY, M. C; WHITTON, J. L; SCANLON, P. J et al.Journal of applied physics. 1988, Vol 64, Num 7, pp 3456-3460, issn 0021-8979Article

PAC investigations of radiation damage annealing in 111In implanted ZnODOGRA, R; BYRNE, A. P; RIDGWAY, M. C et al.Optical materials (Amsterdam). 2009, Vol 31, Num 10, pp 1443-1447, issn 0925-3467, 5 p.Article

Isotope effects for mega-electron-volt boron ions in amorphous siliconSVENSSON, B. G; RIDGWAY, M. C; PETRAVIC, M et al.Journal of applied physics. 1993, Vol 73, Num 10, pp 4836-4840, issn 0021-8979, 1Article

Sputtering behaviour of stainless steel during Pt ion implantationCLAPHAM, L; WHITTON, J. L; RIDGWAY, M. C et al.Materials letters (General ed.). 1993, Vol 16, Num 2-3, pp 139-141, issn 0167-577XArticle

X-ray scattering from amorphous solidsRUIXING FENG; STACHURSKI, Z. H; RODRIGUEZ, M. D et al.Journal of non-crystalline solids. 2014, Vol 383, pp 21-27, issn 0022-3093, 7 p.Conference Paper

Temperature-dependent EXAFS analysis of embedded Pt nanocrystalsGIULIAN, R; ARAUJO, L. L; KLUTH, P et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 15, issn 0953-8984, 155302.1-155302.6Article

Do palladium-dopant pairs exist in silicon?DOGRA, R; BRETT, D. A; BYRNE, A. P et al.Physica. B, Condensed matter. 2006, Vol 376-77, pp 245-248, issn 0921-4526, 4 p.Conference Paper

Ion-irradiation-induced preferential amorphization of Ge nanocrystals in silicaRIDGWAY, M. C; AZEVEDO, G. De M; ELLIMAN, R. G et al.Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 9, pp 094107.1-094107.6, issn 1098-0121Article

Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1-x alloysYU, K. M; WU, J; GEISZ, J. F et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 389-393, issn 0921-4526, 5 p.Conference Paper

Ion-beam-induced amorphization/crystallization during buried oxide layer formationRIDGWAY, M. C; LOCCISANO, R; WILLIAMS, J. S et al.Materials letters (General ed.). 1990, Vol 10, Num 4-5, pp 156-160, issn 0167-577XArticle

Nuclear reaction analysis of shallow B and BF2 implants in SiRIDGWAY, M. C; SCANLON, P. J; WHITTON, J. L et al.Journal of applied physics. 1987, Vol 62, Num 9, pp 3682-3687, issn 0021-8979Article

The Potential of the Perturbed Angular Correlation Technique in Characterizing SemiconductorsDOGRA, Rakesh; BYRNE, A. P; RIDGWAY, M. C et al.Journal of electronic materials. 2009, Vol 38, Num 5, pp 623-634, issn 0361-5235, 12 p.Article

Buried SiO2 layer formation in Si with an MeV O ion beamELLINGBOE, S; RIDGWAY, M. C; SCHULTZ, P. J et al.Journal of applied physics. 1993, Vol 73, Num 3, pp 1133-1138, issn 0021-8979Article

Annealing of ion-implanted SiC by laser-pulse-exposure-generated shock-wavesMULPURI, K. B; QADRI, S. B; GRUN, J et al.Solid-state electronics. 2006, Vol 50, Num 6, pp 1035-1040, issn 0038-1101, 6 p.Conference Paper

In-situ microscopy study of nanocavity shrinkage in Si under ion beam irradiationRUAULT, M.-O; RIDGWAY, M. C; FORTUNA, F et al.EPJ. Applied physics (Print). 2003, Vol 23, Num 1, pp 39-40, issn 1286-0042, 2 p.Conference Paper

Atomic force microscopy and high-resolution RBS investigation of the surface modification of magnetron sputter-etched Si(111) in an argon plasma at different pressuresDEENAPANRAY, P. N. K; HILLIE, K. T; DEMANET, C. M et al.Surface and interface analysis. 1999, Vol 27, Num 10, pp 881-888, issn 0142-2421Article

Mixing and corrosion in Ni implanted with Pt through a sacrificial layer of aluminaDUFFY, A. G; CLAPHAM, L; RIDGWAY, M. C et al.Surface & coatings technology. 1996, Vol 83, Num 1-3, pp 189-193, issn 0257-8972Conference Paper

The use of an Al sacrificial layer to improve retention during high dose Pt ion implantation into NiCLAPHAM, L; WHITTON, J. L; PASCUAL, R et al.Journal of applied physics. 1993, Vol 74, Num 11, pp 6619-6624, issn 0021-8979Article

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