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LOW-NOISE MICROWAVE AMPLIFICATION USING TRANSFERRED-ELECTRON AND BARRIT DEVICES.ROBSON PN.1974; RADIO ELECTRON. ENGR; G.B.; DA. 1974; VOL. 44; NO 10; PP. 553-567; BIBL. 24 REF.Article

EVAPORATION OF CD FROM INP GROWTH MELTSUMEBU I; ROBSON PN.1981; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1981; VOL. 55; NO 2; PP. 392-394; BIBL. 9 REF.Article

HOLE TRAPS IN N-INP BY D.L.T.S. AND TRANSIENT CAPACITANCE TECHNIQUESCHOUDHURY ANMM; ROBSON PN.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 9; PP. 247-249; BIBL. 7 REF.Article

THE NOISE MEASURE OF GAAS AND INP TRANSFERRED ELECTRON AMPLIFIERS.SITCH JE; ROBSON PN.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 9; PP. 1086-1094; BIBL. 26 REF.Article

MICROWAVE-PACKAGE MEASUREMENTS AT THE Q BANDDOWNING BJ; ROBSON PN.1973; ELECTRON LETTERS; G.B.; DA. 1973; VOL. 9; NO 11; PP. 245-246; BIBL. 3 REF.Serial Issue

DESIGN CONSIDERATIONS FOR RESONANT TRAVELLING WAVE IMPATT OSCILLATORSHAMBLETON KG; ROBSON PN.1973; INTERNATION. J. ELECTRON.; G.B.; DA. 1973; VOL. 35; NO 2; PP. 225-244; BIBL. 9 REF.Serial Issue

TIME-DOMAIN NUMERICAL COMPUTATIONS OF ELECTROMAGNETIC FIELDS IN CYLINDRICAL CO-ORDINATES USING THE TRANSMISSION LINE MATRIX: EVALUATION OF RADIATION LOSSES FROM A CHARGE BUNCH POSSING THROUGH A FILL-BOX RESONATORSARMA J; ROBSON PN.1979; NUCL. INSTRUM. METHODS; NLD; DA. 1979; VOL. 159; NO 2-3; PP. 529-541; BIBL. 6 REF.Article

MN AS A P-TYPE DOPANT IN IN0.53GA0.47AS ON INP SUBSTRATESCHAND N; HOUSTON PA; ROBSON PN et al.1981; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 20; PP. 726-727; BIBL. 8 REF.Article

CONTROL OF ZN DOPING FOR GROWTH OF INP PN JUNCTION BY LIQUID PHASE EPITAXYWADA O; MAJERFELD A; ROBSON PN et al.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 10; PP. 2278-2284; BIBL. 28 REF.Article

NOISE FIGURE OF M.E.S.F.E.T.S.BREWITT TAYLOR CR; ROBSON PN; SITCH JE et al.1980; I.E.E. PROC., I; GBR; DA. 1980; VOL. 127; NO 1; PP. 1-8; BIBL. 14 REF.Article

STRAIN-INDUCED OPTICAL WAGEGUIDING IN GAAS EPITAXIAL LAYERS AT 1.15 MU MWESTBROOK LD; ROBSON PN; MAJERFELD A et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 3; PP. 99-100; BIBL. 4 REF.Article

TEMPERATURE DEPENDENCE OF THE SUBTHRESHOLD VELOCITY/FIELD CHARACTERISTIC FOR EPITAXIAL IN P.MAJERFELD A; POTTER KE; ROBSON PN et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 4; PP. 81-82; BIBL. 3 REF.Article

CAPACITIVE PROBE MEASUREMENTS OF DIPOLE DOMAINS IN INP. = MESURES A L'AIDE D'UNE SONDE CAPACITIVE DES DOMAINES DIPOLAIRES DANS INPROBSON PN; POTTER KE; MAJERFELD A et al.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 8; PP. 569-575; BIBL. 14 REF.Article

INP SCHOTTKY CONTACTS WITH INCREASED BARRIER HEIGHTWADA O; MAJERFELD A; ROBSON PN et al.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 5; PP. 381-387; BIBL. 37 REF.Article

PHOTOELASTIC CHANNEL OPTICAL WAVEGUIDES IN EPITAXIAL GAAS LAYERSWESTBROOK LD; FIDDYMENT PJ; ROBSON PN et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 5; PP. 169-170; BIBL. 5 REF.Article

NEW ESTIMATE OF THE MINIMUM NOISE FIGURE OF A M.E.S.F.E.T.BREWITT TAYLOR CR; ROBSON PN; SITCH JE et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 25; PP. 818-820; BIBL. 9 REF.Article

PHOTOELASTIC OPTICAL DIRECTIONAL COUPLERS IN EPITAXIAL GAAS LAYERSBENSON TM; MUROTANI T; HOUSTON PA et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 6; PP. 237-238; BIBL. 4 REF.Article

TRANSIT-TIME-INDUCED MICROWAVE NEGATIVE RESISTANCE IN GA1-XALXAS-GAAS HETEROSTRUCTURE DIODES.SITCH JE; MAJERFELD A; ROBSON PN et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 19; PP. 457-458; BIBL. 8 REF.Article

DESIGN OF TRANSFERRED-ELECTRON AMPLIFIERS WITH GOOD FREQUENCY STABILITY.BERRY C; HOBSON GS; HOWARD MJ et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 270-274; BIBL. 10 REF.Article

VELOCITY SATURATION AND THE CONDUCTION-BAND STRUCTURE OF GA1-XALXAS UNDER PRESSURE.SUGETA T; MAJERFELD A; SAXENA AK et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 12; PP. 842-844; BIBL. 18 REF.Article

A NOVEL ELECTRO-OPTICALLY CONTROLLED DIRECTIONAL-COUPLER SWITCH IN GAAS EPITAXIAL LAYERS AT 1.15 MU MBENSON TM; MUROTANI T; ROBSON PN et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 9; PP. 1477-1483; BIBL. 22 REF.Article

SURFACE MORPHOLOGY OF LIQUID-PHASE-EPITAXIAL INP.GUHA S; MAJERFELD A; MOYES N et al.1975; ELECTRON LETTERS; G.B.; DA. 1975; VOL. 11; NO 14; PP. 303-304; BIBL. 8 REF.Article

DIRECT FREQUENCY DEMODULATION WITH CW GUNN AND IMPATT OSCILLATORSBESTWICK PR; DRINAN PS; HOBSON GS et al.1973; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1973; VOL. 8; NO 1; PP. 37-43; BIBL. 6 REF.Serial Issue

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