Theoretical time series analysis from electric field oscillations generated by rate equations of generation-recombination processes in n-type semiconductorsALBUQUERQUE, H. A; DA SILVA, R. L; RUBINGER, R. M et al.Physica. D. 2005, Vol 208, Num 1-2, pp 123-130, issn 0167-2789, 8 p.Article

Growth of β-FeSi₂ layers on Si (111) by solid phase and reactive deposition epitaxiesMIQUITA, D. R; PANIAGO, R; RODRIGUES, W. N et al.Thin solid films. 2005, Vol 493, Num 1-2, pp 30-34, issn 0040-6090, 5 p.Article

Determination of the band alignment of multi-walled carbon nanotubes decorated with cadmium sulfideSILVA, M. F. O; PANIAGO, R. M; MIQUITA, D. R et al.Applied surface science. 2014, Vol 321, pp 283-288, issn 0169-4332, 6 p.Article

Influence of Te on the morphology of InAs self-assembled nanocrystalsSAFAR, G. A. M; RODRIGUES, W. N; MOREIRA, M. V. B et al.Journal of crystal growth. 1999, Vol 201202, pp 1172-1175, issn 0022-0248Conference Paper

Magnetoluminescence of InAs self-assembled dots embedded in a two-dimensional electron gasKÖCHE, N; PLENTZ, F; RODRIGUES, W. N et al.Physica. B, Condensed matter. 2001, Vol 298, Num 1-4, pp 295-301, issn 0921-4526Conference Paper

Temperature tuning of exciton-photon coupling in a microcavity grown on a (311)A GaAs substrateMATINAGA, F. M; CURY, L. A; VALADARES, E. C et al.Superlattices and microstructures. 1998, Vol 23, Num 1, pp 181-186, issn 0749-6036Article

Heteroepitaxial growth of InAs on GaAs(100) mediated by Te at the interfaceRODRIGUES, W. N; ETGENS, V. H; SAUVAGE-SIMKIN, M et al.Solid state communications. 1995, Vol 95, Num 12, pp 873-877, issn 0038-1098Article

A synchrotron Si2p and As3d core level study of the As-terminated Si(0 0 1) surface oxidationPONCEY, C; ROCHET, F; DUFOUR, G et al.Journal of non-crystalline solids. 1995, Vol 187, pp 40-44, issn 0022-3093Conference Paper

The effect of the planar doping on the electrical transport properties at the Al:n-GaAs(100) interface : ultrahigh effective dopingGERALDO, J. M; RODRIGUES, W. N; MEDEIROS-RIBEIRO, G et al.Journal of applied physics. 1993, Vol 73, Num 2, pp 820-823, issn 0021-8979Article