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REDUCTION OF POPCORN NOISE IN INTEGRATED CIRCUITS.ROEDEL R; VISWANATHAN CR.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 10; PP. 962-964; BIBL. 6 REF.Article

Giovanni SegantiniROEDEL, R.1978, 98 p.Book

ZUR LOESSLICHKEIT DES ALUMINIUMS IN NAF-ALF3-SCHMELZEN = SOLUBILITE DE L'AL DANS DES ELECTROLYTES FONDUS DU TYPE NAF-ALF3GERLACH J; HENNIC U; ROEDEL R et al.1975; METALL; DTSCH.; DA. 1975; VOL. 29; NO 3; PP. 267-269; BIBL. 4 REF.Article

A diffusion model for indium in Hg1-xCdxTeWONG, J; ROEDEL, R. J.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1991, Vol 9, Num 4, pp 2258-2263, issn 0734-2101Article

The use of anodic oxide films to control the diffusion of zinc in GaAsCUTLERYWALA, H; ROEDEL, R. J.Journal of the Electrochemical Society. 1994, Vol 141, Num 6, pp 1639-1643, issn 0013-4651Article

DER EINFLUSS DER GITTERAUFBAUS VON METALLVERBINDUNGEN AUF IHRE LANGBARKEIT = INFLUENCE DE LA STRUCTURE DU RESEAU CRISTALLIN DES COMPOSES METALLIQUES SUR LEUR APTITUDE A LA LIXIVIATIONGERLACH J; PAWLEK F; ROEDEL R et al.1972; ERZMETALL; DTSCH.; 1972, VOL. 25, NUM. 0009, P. 448 A 453Serial Issue

Cathodoluminescence investigation of Ga1-xAlxAs at cryogenic temperaturesROEDEL, R. J; MYHAJLENKO, S; EDWRDS, J. L et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 4, pp 1186-1190, issn 0013-4651, 5 p.Article

The design of anisotropically etched III-V solar cellsROEDEL, R. J; HOLM, P. M.Solar cells. 1984, Vol 11, Num 3, pp 221-239, issn 0379-6787Article

Aplasia of the depressor anguli oris muscle : A rare cause of congenital lower lip palsy?ROEDEL, R; CHRISTEN, H.-J; LASKAWI, R et al.Neuropediatrics. 1998, Vol 29, Num 4, pp 215-219, issn 0174-304XArticle

Dreidimensionale Oberflächendarstellung des Larynx und der Trachea mittels Spiral-CT : Virtuelle Endoskopie = Three-dimensional inner-surface-imaging of the larynx and the trachea by helical CT : Virtual endoscopyRODENWALDT, J; KOPKA, L; ROEDEL, R et al.RÖFO. Fortschritte auf dem Gebiete der Röntgenstrahlen und der neuen bildgebenden Verfahren. 1996, Vol 165, Num 1, pp 80-83, issn 0936-6652Article

Bloc interscalénique et chirurgie de l'épaule. Etude prospective d'une série continue de 167 patients = Interscalene brachial plexus block for shoulder surgery. A prospective study of a consecutive series of 167 patientsJOCHUM, D; ROEDEL, R; GLEYZE, P et al.Annales françaises d'anesthésie et de réanimation. 1997, Vol 16, Num 2, pp 114-119, issn 0750-7658Article

Allongement isolé du temps de céphaline activé et déficit en facteur Hageman = Prolonged activated cephalin time and Hageman factor deficiencySALLERAS, J. P; ROEDEL, R; DAHLET, M et al.Médecine et armées. 1984, Vol 12, Num 8, pp 759-760, issn 0300-4937Article

The design and fabrication of anisotropically-etched GaAs solar cellsHOLM, P. M; ROEDEL, R. J.Photovoltaic specialists conference. 17. 1984, pp 921-926Conference Paper

Use of a sputtered SiO2 coating for surface protection during leaky tube diffusion of Zn into GaAsEDWARDS, J. L; ROEDEL, R. J.Electronics Letters. 1983, Vol 19, Num 23, pp 962-963, issn 0013-5194Article

3D virtual endoscopy of the upper airway : Optimization of the scan parameters in a cadaver phantom and clinical assessmentRODENWALDT, J; KOPKA, L; ROEDEL, R et al.Journal of computer assisted tomography. 1997, Vol 21, Num 3, pp 405-411, issn 0363-8715Article

Ion implantation into (Hg,Cd)Te through dielectric encapsulantsDEUTSCHER, N. F; ROEDEL, R. J; MCINTYRE, L et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 2, pp 1143-1146, issn 0734-2101Article

Sputtered dielectric films for GaAs diffusion masksROEDEL, R. J; ERKAYA, H. H; EDWARDS, J. L et al.Journal of electronic materials. 1988, Vol 17, Num 3, pp 243-247, issn 0361-5235Article

Ohmic contacts to p- and n-type GaAs made with Al-Sn-NiROEDEL, R. J; DAVITO, D; WEST, W et al.Journal of the Electrochemical Society. 1993, Vol 140, Num 5, pp 1450-1453, issn 0013-4651Article

Comparison of etch pit distributions and cathodoluminescence images in semi-insulating GaAsROEDEL, R. J; ROWLEY, K; EDWARDS, J. L et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 10, pp 3120-3125, issn 0013-4651Article

Preliminary studies of Al-Ge-Ni ohmic contacts to p- and n-type GaAsGRAHAM, R. J; ERKAYA, H. H; ROEDEL, R. J et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 1, pp 266-267, issn 0013-4651Article

Transmission electron microscopy cathodoluminescence investigation of anomalous Sn diffusion in GaAsGRAHAM, R. J; SPENCE, J. C. H; ROEDEL, R. J et al.Journal of applied physics. 1986, Vol 59, Num 1, pp 164-167, issn 0021-8979Article

Reproducible leaky tube diffusion of Cd in InP at 500°CWHEELER, C. B; ROEDEL, R. J; NELSON, R. W et al.Journal of applied physics. 1990, Vol 68, Num 3, pp 969-972, issn 0021-8979, 4 p.Article

Diffusion of zinc into Ga1-xAlxAsAGENO, S. K; ROEDEL, R. J; MELLEN, N et al.Applied physics letters. 1985, Vol 47, Num 11, pp 1193-1195, issn 0003-6951Article

Panchromatic and spectral characterisation of Cu contaminated semi-insulating GaAsZIRKLE, T. E; MYHAJLENKO, S; NAM SOO KANG et al.Scanning microscopy. 1992, Vol 6, Num 1, pp 105-113, issn 0891-7035Article

Spectrally resolved transmission cathodoluminescence evaluation of vertical cavity surface emitting lasersMYHAJLENKO, S; WONG, M; EDWARDS, J. L et al.Scanning microscopy. 1992, Vol 6, Num 4, pp 955-960, issn 0891-7035Article

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