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EIN IONEN-ELEKTRONENKONVERTER MIT SZINTILLATIONSZAEHLER. = UN CONVERTISSEUR IONS-ELECTRONS AVEC COMPTEUR DE SCINTILLATIONSHINZ A; ROGASCHEWSKI S.1977; EXPER. TECH. PHYS.; DTSCH.; DA. 1977; VOL. 25; NO 4; PP. 353-359; ABS. RUSSE ANGL.; BIBL. 17 REF.Article

Z1-DEPENDENCE OF KINETIC ION-ELECTRON EMISSION FROM A GAS-COVERED STAINLESS-STEEL SURFACE.ROGASCHEWSKI S; DUSTERHOFT H.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 75; NO 2; PP. K173-K175; BIBL. 16 REF.Article

BACKSCATTERING COEFFICIENT MEASUREMENTS OF 15 TO 60 KEV ELECTRONS FOR SOLIDS AT VARIOUS ANGLES OF INCIDENCENEUBERT G; ROGASCHEWSKI S.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 1; PP. 35-41; ABS. GER; BIBL. 25 REF.Article

DETERMINATION OF THE ELECTRON BACKSCATTERING COEFFICIENT FOR THIN FILMS USING DOUBLE LAYERSNEUBERT G; ROGASCHEWSKI S.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 2; PP. K191-K193; BIBL. 9 REF.Article

Energy spectra of backscattered electrons for solid films and double layers by use of Werneŕs analytic model = Energiespektren rueckgestreuter Elektronen von festen Duennschichten und Doppelschichten mittels des analytischen Modells von WernerROGASCHEWSKI, S.Physica status solidi. A. Applied research. 1983, Vol 79, Num 1, pp 149-159, issn 0031-8965Article

Energy spectra of backscattered electrons for solid films and double layers by use of Werner's analytic modelROGASCHEWSKI, S.Physica status solidi. A. Applied research. 1983, Vol 79, Num 1, pp 149-159, issn 0031-8965Article

EINE ANORDNUNG ZUR MESSUNG DER POSITIVEN SEKUNDAERIONENEMISSION AUS FESTKOERPEROBERFLAECHEN. = UN APPAREIL POUR LA MESURE DE L'EMISSION D'IONS SECONDAIRES POSITIFS PAR DES SURFACES SOLIDESDUSTERHOFT H; MANNS R; ROGASCHEWSKI S et al.1977; EXPER. TECH. PHYS.; DTSCH.; DA. 1977; VOL. 25; NO 2; PP. 117-122; ABS. ANGL.; BIBL. 17 REF.Article

KINETIC ENERGY REFLECTION FROM POLYCRYSTALS BOMBARDED WITH AR+, KR+, AND XE+ IONS.HILDEBRANDT D; MANNS R; ROGASCHEWSKI S et al.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 33; NO 4; PP. 251-252; BIBL. 5 REF.Article

QUANTITATIVE ANALYSIS OF BI1-XSBXCHRIST B; OELGART G; ROGASCHEWSKI S et al.1981; CRYST. RES. TECH.; ISSN 0232-1300; DDR; DA. 1981-05; VOL. 16; NO 5; PP. 623-632; BIBL. 16 REF.Article

MESSUNG DES ELEKTRONENRUECKSTREUKOEFFIZIENTEN VON 15-BIS 60-KEV-ELEKTRONEN AN FESTKOERPERN = MESURES DES COEFFICIENTS DE RETRODIFFUSION DES ELECTRONS D'ELECTRONS DE 15 A 60 KEV DANS DES SOLIDESNEUBERT G; ROGASCHEWSKI S; SCHOLZ H et al.1980; EXP. TECH. PHYS.; ISSN 0014-4924; DDR; DA. 1980; VOL. 28; NO 4; PP. 341-345; ABS. RUS/ENG; BIBL. 15 REF.Article

UNTERSUCHUNGEN ZUR IONEN-ELEKTRONEN-EMISSION EINKRISTALLINER ALKALIHALOGENIDE BEIM BESCHUSS MIT POSITIVEN EDELGASIONEN IM ENERGIEBEREICH 1,5-25 KEV. = ETUDE DE L'EMISSION ELECTRONIQUE INDUITE PAR IONS DE CRISTAUX D'HALOGENURES ALCALINS LORS DU BOMBARDEMENT PAR DES IONS DE GAZ RARE D'ENERGIE COMPRISE ENTRE 1,5 ET 25 KEVKONIG W; KREBS KH; ROGASCHEWSKI S et al.1975; INTERNATION. J. MASS SPECTROM. ION PHYS.; NETHERL.; DA. 1975; VOL. 16; NO 3; PP. 243-256; ABS. ANGL.; BIBL. 29 REF.Article

Determination of the electron backscattering coefficient for thin films using double layers = Détermination du coefficient de rétrodiffusion des électrons pour les couches minces au moyen de couches doubles = Bestimmung des Elektron-Rueckstreukoeffizienten fuer Duennschichten mittels DoppelschichtenNEUBERT, G; ROGASCHEWSKI, S.Physica status solidi. A. Applied research. 1983, Vol 75, Num 2, pp K191-K193, issn 0031-8965Article

Electrochemically deposited copper Schottky contacts on n-type GaAs for electron-beam-induced current measurementsSCHLESINGER, R; ROGASCHEWSKI, S; JANIETZ, P. J et al.Physica status solidi. A. Applied research. 1990, Vol 120, Num 2, pp 687-694, issn 0031-8965Article

Morphology and luminescence of p-doped porous siliconZUR MÜHLEN, E; CHANG, D; ROGASCHEWSKI, S et al.Physica status solidi. B. Basic research. 1996, Vol 198, Num 2, pp 673-686, issn 0370-1972Article

Snow algae from northwest Svalbard : their identification, distribution, pigment and nutrient contentMÜLLER, T; BLEISS, W; MARTIN, C.-D et al.Polar biology (Print). 1998, Vol 20, Num 1, pp 14-32, issn 0722-4060Article

UV-laser ablation of sensory cells in living insectsFUHR, G; RONACHER, B; KRAHE, R et al.Applied physics. A, Materials science & processing (Print). 1999, Vol 68, Num 4, pp 379-385, issn 0947-8396Article

Influence of spatial inhomogeneity on the strain dependences of the electrical resistivity and the Hall coefficient in Bi1-xSbx semiconductor alloys (0.1<x<0.16)KIRAKOZOVA, L. A; MININA, N. YA; NEUBERT, G et al.Soviet physics. Solid state. 1991, Vol 33, Num 8, pp 1336-1341, issn 0038-5654Article

Self-organized growth of HgSe quantum wiresTRAN ANH, T; WISSMANN, H; ROGASCHEWSKI, S et al.Journal of crystal growth. 2000, Vol 214-15, pp 40-44, issn 0022-0248Conference Paper

Internal structure of nanoporous TiO2/polyion thin films prepared by layer-by-layer depositionKNIPRATH, R; DUHM, S; GLOWATZKI, H et al.Langmuir. 2007, Vol 23, Num 19, pp 9860-9865, issn 0743-7463, 6 p.Article

Growth, characterization, and physical properties of Bi-Sr-Ca-Cu-O superconducting whiskersKRAAK, W; KRAPF, A; PRUSS, N et al.Physica status solidi. A. Applied research. 1996, Vol 158, Num 1, pp 183-203, issn 0031-8965Article

Evolution of the density of states at the Fermi level of Bi2-yPbySr2-xLaxCuO6+δ and Bi2Sr2-xLaxCuO6+δ cuprates with hole dopingSCHNEIDER, M; UNGER, R.-S; MITDANK, R et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 1, pp 014504.1-014504.8, issn 1098-0121Article

Mammalian cell traces - morphology, molecular composition, artificial guidance and biotechnological relevance as a new type of bionanotubeZIMMERMANN, H; RICHTER, E; REICHLE, C et al.Applied physics. A, Materials science & processing (Print). 2001, Vol 73, Num 1, pp 11-26, issn 0947-8396Article

Self-organized MBE growth of II-VI epilayers on patterned GaSb substratesWISSMANN, H; TRAN ANH, T; ROGASCHEWSKI, S et al.Journal of crystal growth. 1999, Vol 201202, pp 619-622, issn 0022-0248Conference Paper

ZnCdO/ZnO hetero-and quantum well structures for light-emitting applicationsSADOFEV, S; KALUSNIAK, S; PULS, J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68950C.1-68950C.13, issn 0277-786X, isbn 978-0-8194-7070-6, 1VolConference Paper

Planar ordering of InP quantum dots on (100)In0.48Ga0.52PHATAMI, F; MÜLLER, U; KÖHLER, R et al.Journal of crystal growth. 2000, Vol 216, Num 1-4, pp 26-32, issn 0022-0248Article

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