au.\*:("ROGASCHEWSKI S")
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EIN IONEN-ELEKTRONENKONVERTER MIT SZINTILLATIONSZAEHLER. = UN CONVERTISSEUR IONS-ELECTRONS AVEC COMPTEUR DE SCINTILLATIONSHINZ A; ROGASCHEWSKI S.1977; EXPER. TECH. PHYS.; DTSCH.; DA. 1977; VOL. 25; NO 4; PP. 353-359; ABS. RUSSE ANGL.; BIBL. 17 REF.Article
BACKSCATTERING COEFFICIENT MEASUREMENTS OF 15 TO 60 KEV ELECTRONS FOR SOLIDS AT VARIOUS ANGLES OF INCIDENCENEUBERT G; ROGASCHEWSKI S.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 1; PP. 35-41; ABS. GER; BIBL. 25 REF.Article
DETERMINATION OF THE ELECTRON BACKSCATTERING COEFFICIENT FOR THIN FILMS USING DOUBLE LAYERSNEUBERT G; ROGASCHEWSKI S.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 2; PP. K191-K193; BIBL. 9 REF.Article
Energy spectra of backscattered electrons for solid films and double layers by use of Werner's analytic modelROGASCHEWSKI, S.Physica status solidi. A. Applied research. 1983, Vol 79, Num 1, pp 149-159, issn 0031-8965Article
EINE ANORDNUNG ZUR MESSUNG DER POSITIVEN SEKUNDAERIONENEMISSION AUS FESTKOERPEROBERFLAECHEN. = UN APPAREIL POUR LA MESURE DE L'EMISSION D'IONS SECONDAIRES POSITIFS PAR DES SURFACES SOLIDESDUSTERHOFT H; MANNS R; ROGASCHEWSKI S et al.1977; EXPER. TECH. PHYS.; DTSCH.; DA. 1977; VOL. 25; NO 2; PP. 117-122; ABS. ANGL.; BIBL. 17 REF.Article
KINETIC ENERGY REFLECTION FROM POLYCRYSTALS BOMBARDED WITH AR+, KR+, AND XE+ IONS.HILDEBRANDT D; MANNS R; ROGASCHEWSKI S et al.1977; RAD. EFFECTS; G.B.; DA. 1977; VOL. 33; NO 4; PP. 251-252; BIBL. 5 REF.Article
QUANTITATIVE ANALYSIS OF BI1-XSBXCHRIST B; OELGART G; ROGASCHEWSKI S et al.1981; CRYST. RES. TECH.; ISSN 0232-1300; DDR; DA. 1981-05; VOL. 16; NO 5; PP. 623-632; BIBL. 16 REF.Article
Electrochemically deposited copper Schottky contacts on n-type GaAs for electron-beam-induced current measurementsSCHLESINGER, R; ROGASCHEWSKI, S; JANIETZ, P. J et al.Physica status solidi. A. Applied research. 1990, Vol 120, Num 2, pp 687-694, issn 0031-8965Article
UV-laser ablation of sensory cells in living insectsFUHR, G; RONACHER, B; KRAHE, R et al.Applied physics. A, Materials science & processing (Print). 1999, Vol 68, Num 4, pp 379-385, issn 0947-8396Article
Influence of spatial inhomogeneity on the strain dependences of the electrical resistivity and the Hall coefficient in Bi1-xSbx semiconductor alloys (0.1<x<0.16)KIRAKOZOVA, L. A; MININA, N. YA; NEUBERT, G et al.Soviet physics. Solid state. 1991, Vol 33, Num 8, pp 1336-1341, issn 0038-5654Article
Growth, characterization, and physical properties of Bi-Sr-Ca-Cu-O superconducting whiskersKRAAK, W; KRAPF, A; PRUSS, N et al.Physica status solidi. A. Applied research. 1996, Vol 158, Num 1, pp 183-203, issn 0031-8965Article
Evolution of the density of states at the Fermi level of Bi2-yPbySr2-xLaxCuO6+δ and Bi2Sr2-xLaxCuO6+δ cuprates with hole dopingSCHNEIDER, M; UNGER, R.-S; MITDANK, R et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 1, pp 014504.1-014504.8, issn 1098-0121Article
Mammalian cell traces - morphology, molecular composition, artificial guidance and biotechnological relevance as a new type of bionanotubeZIMMERMANN, H; RICHTER, E; REICHLE, C et al.Applied physics. A, Materials science & processing (Print). 2001, Vol 73, Num 1, pp 11-26, issn 0947-8396Article
Self-organized MBE growth of II-VI epilayers on patterned GaSb substratesWISSMANN, H; TRAN ANH, T; ROGASCHEWSKI, S et al.Journal of crystal growth. 1999, Vol 201202, pp 619-622, issn 0022-0248Conference Paper
ZnCdO/ZnO hetero-and quantum well structures for light-emitting applicationsSADOFEV, S; KALUSNIAK, S; PULS, J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68950C.1-68950C.13, issn 0277-786X, isbn 978-0-8194-7070-6, 1VolConference Paper
Planar ordering of InP quantum dots on (100)In0.48Ga0.52PHATAMI, F; MÜLLER, U; KÖHLER, R et al.Journal of crystal growth. 2000, Vol 216, Num 1-4, pp 26-32, issn 0022-0248Article
