NITROGEN IMPLANTATION IN GAAS_1-XP_X (X=0.4; 0.65)TAKAI M; RYSSEL H; ROSCHENTHALER D et al.1980; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1980; VOL. 21; NO 3; PP. 241-248; BIBL. 35 REF.Article

ZUR AKTIVIERUNG DUENNER CHROMSCHICHTEN BEI DER GALVANISCHEN METALLISIERUNG VON NICHTLEITERN = ACTIVATION DES COUCHES DE CR LORS DE LA METALLISATION DES ISOLANTS ELECTRIQUESBOGENSCHUTZ AF; JOSTAN L; ROSCHENTHALER D et al.1972; GALVANOTECHNIK; DTSCH.; DA. 1972; VOL. 63; NO 11; PP. 996-1003; ABS. ANGL. FR.; BIBL. 16 REF.Serial Issue

PRODUCTION OF HIGHLY EXCITED STATES OF FAST IONS EMERGING FROM SOLID TARGETSBETZ HD; ROSCHENTHALER D; ROTHERMEL J et al.1983; PHYSICAL REVIEW LETTERS; ISSN 0031-9007; USA; DA. 1983; VOL. 50; NO 1; PP. 34-37; BIBL. 19 REF.Article

CWCO₂-LASER ANNEALING OF ARSENIC IMPLANTED SILICONTAKAI M; TSIEN PH; TSOU SC et al.1980; APPL. PHYS.; ISSN 0340-3793; DEU; DA. 1980; VOL. 22; NO 2; PP. 129-136; BIBL. 25 REF.Article

Comment on Electric field ionization of foil-excited Rydberg states of fast heavy ionsBETZ, H.-D; ROTHERMEL, J; RÖSCHENTHALER, D et al.Physical review. A, General physics. 1984, Vol 30, Num 2, pp 1125-1126, issn 0556-2791Article