A DISPLACED MAXWELLIAN APPROACH TO BALLISTIC ELECTRON TRANSPORT IN SEMICONDUCTORSROSENCHER E.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 12; PP. 1293-1295; BIBL. 9 REF.Article

SYNTHESE DE FILTRES RECURSIFS A DEUX INDICES.ROSENCHER E.1977; R.A.I.R.O., AUTOMAT.; FR.; DA. 1977; VOL. 11; NO 4; PP. 373-391; BIBL. 9 REF.Article

COMPARISON OF INTERFACE STATE DENSITY IN MIS STRUCTURE DEDUCED FROM DLTS AND TERMAN MEASUREMENTSROSENCHER E; BOIS D.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 3; PP. 545-546; BIBL. 10 REF.Article

Towards integrated semiconductor optical parametric oscillators : Oscillateurs paramétriques optiques = Optical parametric oscillatorsROSENCHER, E.Comptes rendus de l'Académie des sciences. Série IV, Physique, astrophysique. 2000, Vol 1, Num 5, pp 615-625, issn 1296-2147Article

Two photon nonlinearities in a resonant quantum well systemROSENCHER, E.Journal of applied physics. 1993, Vol 73, Num 4, pp 1909-1911, issn 0021-8979Article

CHANGE OF INTERFACE STATE SPECTRUM IN AL/SIO₂/SI STRUCTURES WITH BIASING DURING ELECTRON IRRADIATIONROSENCHER E; BOIS D.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 601-603; BIBL. 17 REF.Article

APPROXIMATION RATIONNELLE DE FILTRESROSENCHER E; CLERGET M.1979; ANN. TELECOMMUNIC.; FRA; DA. 1979; VOL. 34; NO 7-8; PP. 439-445; ABS. ENG; BIBL. 7 REF.Article

IONIZATION TRANSIENTS OF SHALLOW LEVELS IN SILICON SPACE CHARGE LAYER AT LOW TEMPERATUREROSENCHER E; MOSSER V; VINCENT G et al.1983; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1983; VOL. 45; NO 7; PP. 629-632; BIBL. 10 REF.Article

DESIGN OF 2-D RECURSIVE FILTERS WITH SEPARABLE DENOMINATOR TRANSFER FUNCTIONSABRAMATIC JF; GERMAIN F; ROSENCHER E et al.1979; ICASSP 79. INTERNATIONAL CONFERENCE ON ACOUSTICS, SPEECH AND SIGNAL PROCESSING/1979/WASHINGTON DC; USA; NEW YORK: IEEE; DA. 1979; PP. 24-27; BIBL. 6 REF.Conference Paper

DESIGN OF TWO-DIMENSIONAL SEPARABLE DENOMINATOR RECURSIVE FILTERSABRAMATIC JF; GERMAIN F; ROSENCHER E et al.1979; I.E.E.E. TRANS. ACOUST. SPEECH SIGNAL PROCESSG; USA; DA. 1979; VOL. 27; NO 5; PP. 445-453; BIBL. 9 REF.Article

Practical aspects of lasing without inversion in various mediaKHURGIN, J. B; ROSENCHER, E.IEEE journal of quantum electronics. 1996, Vol 32, Num 11, pp 1882-1896, issn 0018-9197Article

Model system for optical nonlinearities : asymmetric quantum wellsROSENCHER, E; BOIS, P.Physical review. B, Condensed matter. 1991, Vol 44, Num 20, pp 11315-11327, issn 0163-1829Article

AN ¹⁸O STUDY OF THE THERMAL OXIDATION OF SILICON IN OXYGENROSENCHER E; STRABONI A; RIGO S et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 4; PP. 254-256; BIBL. 14 REF.Article

Transient capacitance spectroscopy of Na⁺-induced surface states at the Si/SiO₂ interfaceROSENCHER, E; COPPARD, R.Journal of applied physics. 1984, Vol 55, Num 4, pp 971-979, issn 0021-8979Article

Search for quantum size effects in ultrathin epitaxial metallic filmsBADOZ, P. A; D'AVITAYA, F. A; ROSENCHER, E et al.Annales de physique (Imprimé). 1991, Vol 16, Num 6, pp 623-638, issn 0003-4169Article

Transient-current study of field-assisted emission from shallow levels in siliconROSENCHER, E; MOSSER, V; VINCENT, G et al.Physical review. B, Condensed matter. 1984, Vol 29, Num 3, pp 1135-1147, issn 0163-1829Article

Monolithic spectrometer based on intersubband transitions in quantum wellsDUBOZ, J. Y; ROSENCHER, E; LAURENT, N et al.IEEE journal of quantum electronics. 1994, Vol 30, Num 7, pp 1507-1510, issn 0018-9197Article

Determination of electron recombination parameters in GaAs//AlGaAs quantum wells by impedance spectroscopyLUC, F; ROSENCHER, E; VINTER, B et al.Applied physics letters. 1993, Vol 62, Num 10, pp 1143-1145, issn 0003-6951Article

Propriétés électroniques et optiques des hétérostructures métal/semiconducteur = Electronic and optical properties of metal/semiconductor heterostructuresDuboz, Jean-Yves; Rosencher, E.1990, 187 p.Thesis

Intersubband optical transients in multi-quantum-well structuresLUC, F; ROSENCHER, E; BOIS, P et al.Applied physics letters. 1993, Vol 62, Num 20, pp 2542-2544, issn 0003-6951Article

Injection mechanism at contacts in a quantum-well intersubband infrared detectorROSENCHER, E; LUC, F; BOIS, P et al.Applied physics letters. 1992, Vol 61, Num 4, pp 468-470, issn 0003-6951Article

Quantum well infrared photodetection indiced by interband pumpingBERGER, V; ROSENCHER, E; VODJDANI, N et al.Applied physics letters. 1993, Vol 62, Num 4, pp 378-380, issn 0003-6951Article

Second harmonic generation by intersub-band transitions in compositionally asymmetrical MQWsROSENCHER, E; BOIS, P; NAGLE, J et al.Electronics Letters. 1989, Vol 25, Num 16, pp 1063-1065, issn 0013-5194, 3 p.Article

Probing of impurity potential well at the Si/SiO₂ interface by electric-field-enhanced emissionROSENCHER, E; COPPARD, R; BOIS, D et al.Journal of applied physics. 1985, Vol 57, Num 8, pp 2823-2829, issn 0021-8979, 1Article

Théorie et modélisation de détecteurs infrarouge à puits quantiques = Theory and Modeling of Quantum Well Infrared DetectorsThibaudeau, Laurent; Rosencher, E.1995, 122 p.Thesis