Mécanisme de propagation de l'état en circuit d'un thyristor d'arséniure de gallium par les photonsKECHEK, A. G; ROSSIN, V. V.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 6, pp 1029-1033, issn 0015-3222Article

Effect of hot electrons on the magnetic field enhancement of exciton luminescence in GaAsROSSIN, V. V; CHRISTIANEN, P. C. M; TRAVNIKOV, V. V et al.Solid state communications. 1993, Vol 87, Num 7, pp 623-626, issn 0038-1098Article

Influence de l'intensité d'excitation sur la luminescence des polaritons dans l'arséniure de galliumBOTNARYUK, V. M; ZHILYAEV, YU. V; ROSSIN, V. V et al.Fizika tverdogo tela. 1986, Vol 28, Num 1, pp 201-207, issn 0367-3294Article

The investigation of a transition layer in epitaxial GaAs by the low temperature photoluminescence techniqueZHILYAEV, YU. V; KRIVOLAPCHUK, V. V; RODIONOV, A. V et al.Physica status solidi. A. Applied research. 1985, Vol 89, Num 1, pp K61-K64, issn 0031-8965Article

Dynamics of the magnetic polaron formation in ZnSe/ZnMnSe quantum well structuresROSSIN, V. V; HENNEBERGER, F; PULS, J et al.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 985-988, issn 0022-0248Conference Paper

Kinetics of the formation and energy relaxation of excitons in GaAsAAVIKSOO, Y. Y; REIMAND, I. Y; ROSSIN, V. V et al.JETP letters. 1991, Vol 53, Num 7, pp 395-399, issn 0021-3640, 5 p.Article

Magnetic cooling of excitons in GaAsZHILYAEV, YU. V; ROSSIN, V. V; ROSSINA, T. V et al.Soviet physics, JETP. 1991, Vol 72, Num 4, pp 692-698, issn 0038-5646, 7 p.Article

Rôle des queues de densité d'états dans la formation des spectres de photoluminescence et électroluminescence de GaAs<Si>KOROLEV, V. L; ROSSIN, V. V; SIDOROV, V. G et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 3, pp 525-527, issn 0015-3222Article

Internal Q-switching in semiconductor lasers : high intensity pulses of the picosecond range and the spectral peculiaritiesVAINSHTEIN, S; ROSSIN, V. V; KILPELÄ, A et al.IEEE journal of quantum electronics. 1995, Vol 31, Num 6, pp 1015-1021, issn 0018-9197Article

Enhancement of exciton luminescence of GaAs in a magnetic fieldZHILYAEV, YU. V; ROSSIN, V. V; ROSSINA, T. V et al.Pis′ma v žurnal èksperimental′noj i teoretičeskoj fiziki. 1989, Vol 49, Num 9, pp 492-494, issn 0370-274X, 3 p.Article

Luminescence de polaritons de GaAsZHILYAEV, YU. V; MARKARYAN, G. R; ROSSIN, V. V et al.Fizika tverdogo tela. 1986, Vol 28, Num 9, pp 2688-2695, issn 0367-3294Article

Kinetics of exciton formation and relaxation in GaAsAAVIKSOO, J; REIMAND, I; ROSSIN, V. V et al.Journal of luminescence. 1992, Vol 53, Num 1-6, pp 423-426, issn 0022-2313Conference Paper

Quenching of exciton luminescence by hot electrons in GaAsAAVIKSOO, YA. YU; REIMAND, I. YA; ROSSIN, V. V et al.Soviet physics. Solid state. 1991, Vol 33, Num 8, pp 1355-1357, issn 0038-5654Article

Utilisation des spectres de luminescence des polaritons pour caractériser la qualité des cristaux de GaAsZHILYAEV, YU. V; ROSSIN, V. V; ROSSINA, T. V et al.Fizika i tehnika poluprovodnikov. 1988, Vol 22, Num 10, pp 1885-1888, issn 0015-3222Article

Rendement de luminescence dans l'arséniure de gallium compenséKOROLEV, V. L; ROSSIN, V. V; SIDOROV, V. G et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 5, pp 934-936, issn 0015-3222Article