Fabrication and characterisation of high resistivity SOI substrates for monolithic high energy physics detectorsRUDDELL, F. H; SUDER, S. L; MARCZEWSKI, J et al.Solid-state electronics. 2008, Vol 52, Num 12, pp 1849-1853, issn 0038-1101, 5 p.Conference Paper

Germanium on sapphire substrates for system on a chipGAMBLE, H. S; ARMSTRONG, B. M; BAINE, P. T et al.Materials science in semiconductor processing. 2008, Vol 11, Num 5-6, pp 195-198, issn 1369-8001, 4 p.Conference Paper

Germanium MOS capacitors with hafnium dioxide and silicon dioxide dielectricsWADSWORTH, H. J; BHATTACHARYA, S; MCNEILL, D. W et al.Materials science in semiconductor processing. 2006, Vol 9, Num 4-5, pp 685-689, issn 1369-8001, 5 p.Conference Paper

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substratesMCNEILL, D. W; BHATTACHARYA, S; WADSWORTH, H et al.Journal of materials science. Materials in electronics. 2008, Vol 19, Num 2, pp 119-123, issn 0957-4522, 5 p.Conference Paper

Growth mechanism of epitaxial silicon carbide produced using rapid thermal CVDRUDDELL, F. H; ARMSTRONG, B. M; GAMBLE, H. S et al.Journal de physique IV. Colloque. 1991, Vol 1, Num 2, pp C2.823-C2.830Conference Paper

Fabrication of sub-micron active layer SSOI substrates using ion splitting and wafer bonding technologiesRUDDELL, F. H; BAIN, M. F; SUDER, S et al.Proceedings - Electrochemical Society. 2003, pp 25-30, issn 0161-6374, isbn 1-56677-402-0, 6 p.Conference Paper

Fabrication of sub-micron active layer SSOI substrates using ion splitting and wafer bonding technologiesRUDDELL, F. H; BAIN, M. F; SUDER, S et al.Proceedings - Electrochemical Society. 2003, pp 57-62, issn 0161-6374, isbn 1-56677-375-X, 6 p.Conference Paper

Novel materials for the semiconductor industry, deposited using a rapid thermal chemical vapour deposition systemMONTGOMERY, J. H; RUDDELL, F. H; MCNEILL, D. W et al.Journal of materials processing technology. 1992, Vol 33, Num 4, pp 481-492, issn 0924-0136Conference Paper