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Hot-wire chemical vapor growth and characterization of crystalline GeTe filmsABRUTIS, A; PLAUSINAITIENE, V; SKAPAS, M et al.Journal of crystal growth. 2009, Vol 311, Num 2, pp 362-367, issn 0022-0248, 6 p.Article

Chemical vapor deposition of chalcogenide materials for phase-change memoriesABRUTIS, A; PLAUSINAITIENE, V; GIESEN, C et al.Microelectronic engineering. 2008, Vol 85, Num 12, pp 2338-2341, issn 0167-9317, 4 p.Conference Paper

Improved GaAs/Ga_1-xAl_xAs chemical beam epitaxy using triisopropylgalliumLANE, P. A; MARTIN, T; WHITEHOUSE, C. R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 17, Num 1-3, pp 15-20, issn 0921-5107Conference Paper

Tri-isopropyl gallium : a very promising precursor for chemical beam epitaxyLANE, P. A; MARTIN, T; FREER, R. W et al.Applied physics letters. 1992, Vol 61, Num 3, pp 285-287, issn 0003-6951Article

Alternative precursors for MOVPE growth of InN and GaN at low temperatureRUFFENACH, S; MORET, M; BRIOT, O et al.Journal of crystal growth. 2009, Vol 311, Num 10, pp 2791-2794, issn 0022-0248, 4 p.Conference Paper

Growth of InN films and nanostructures by MOVPEBRIOT, O; RUFFENACH, S; MORET, M et al.Journal of crystal growth. 2009, Vol 311, Num 10, pp 2761-2766, issn 0022-0248, 6 p.Conference Paper

Metal-organic chemical vapour deposition of mixed-conducting perovskite oxide layers on monocrystalline and porous ceramic substratesABRUTIS, A; BARTASYTE, A; GARCIA, G et al.Thin solid films. 2004, Vol 449, Num 1-2, pp 94-99, issn 0040-6090, 6 p.Article

Defects in CuGaSe₂ thin films grown by MOCVDBAUKNECHT, A; SIEBENTRITT, S; GERHARD, A et al.Thin solid films. 2000, Vol 361-62, pp 426-431, issn 0040-6090Conference Paper

Growth of GaSb on GaAs substratesGRAHAM, R. M; JONES, A. C; MASON, N. J et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 363-370, issn 0022-0248Conference Paper

Growth of low carbon content Al_xGa_1-xAs by reduced pressure MOVPE using trimethylamine alaneJONES, A. C; RUSHWORTH, S. A.Journal of crystal growth. 1990, Vol 106, Num 2-3, pp 253-257, issn 0022-0248Article

Atomic Vapor Depositions of Ti―Ta―O thin films for Metal―Insulator―Metal applicationsLUKOSIUS, M; BARISTIRAN KAYNAK, C; WENGER, Ch et al.Thin solid films. 2011, Vol 519, Num 11, pp 3831-3834, issn 0040-6090, 4 p.Article

Investigations of thermal annealing effects on electrical and structural properties of SrTaO based MIM capacitorKAYNAK, C. Baristiran; LUKOSIUS, M; COSTINA, I et al.Microelectronic engineering. 2010, Vol 87, Num 12, pp 2561-2564, issn 0167-9317, 4 p.Article

InN excitonic deformation potentials determined experimentallyGIL, B; MORET, M; BRIOT, O et al.Journal of crystal growth. 2009, Vol 311, Num 10, pp 2798-2801, issn 0022-0248, 4 p.Conference Paper

Growth study of Ge_xSb_yTe_z deposited by MOCVD under nitrogen for non-volatile memory applicationsLONGO, M; SALICIO, O; RUSHWORTH, S et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 5053-5057, issn 0022-0248, 5 p.Conference Paper

Chemical vapor deposition of TBC : An alternative process for gas turbine componentsWAHL, G; NEMETZ, W; GIANNOZZI, M et al.Journal of engineering for gas turbines and power. 2001, Vol 123, Num 3, pp 520-524, issn 0742-4795Conference Paper

Study of polycrystalline CuGaSe₂ thin films deposited by MOCVD onto ZnO substratesORSAL, G; MAILLY, F; ROMAIN, N et al.Thin solid films. 2000, Vol 361-62, pp 135-139, issn 0040-6090Conference Paper

Nitrogen doping of ZnSe with trimethylsilylazide, triallylamine or bisditrimethylsilylamidozinc during metalorganic vapour phase epitaxyTAUDT, W; LAMPE, S; SAUERLÄNDER, F et al.Journal of crystal growth. 1996, Vol 169, Num 2, pp 243-249, issn 0022-0248Article

Structural and electronic characterization of β-SiC films on Si grown from mono-methylsilane precursorsKRÖTZ, G; LEGNER, W; MÜLLER, G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 29, Num 1-3, pp 154-159, issn 0921-5107Conference Paper

Growth of Al_xGa_1-xAs by MOVPE using a new alkylaluminium precursorJONES, A. C; JACOBS, P. R; RUSHWORTH, S et al.Journal of crystal growth. 1989, Vol 96, Num 4, pp 769-773, issn 0022-0248Article

Investigations into the growth of AlN by MOCVD using trimethylsilylazide as nitrogen sourceAULD, J; HOULTON, D. J; JONES, A. C et al.Journal of material chemistry. 1994, Vol 4, Num 8, pp 1245-1247, issn 0959-9428Article

Comparison of triethylgallium and tri-isobutylgallium for growth of GaAs and AlGaAs by metalorganic molecular beam epitaxyABERNATHY, C. R; WISK, P. W; JONES, A. C et al.Applied physics letters. 1992, Vol 61, Num 2, pp 180-182, issn 0003-6951Article

Vapour-pressure data for adducts of dimethylzinc: sources and dopants for zinc in metal-organic chemical vapour depositionO'BRIEN, P; WALSH, J. R; JONES, A. C et al.Journal of material chemistry. 1993, Vol 3, Num 7, pp 739-742, issn 0959-9428Article

The preparation and characterization of bis(2,2-dimethylpropyl)cadmium(II) and its 2,2'-bipyridyl adductO'BRIEN, P; WALSH, J. R; JONES, A. C et al.Polyhedron. 1990, Vol 9, Num 12, pp 1483-1485, issn 0277-5387, 3 p.Article

Growth of Al_xGa_1-xAs by reduced pressure MOVPE using trimethylamine alaneJONES, A. C; RUSHWORTH, S. A; BOHLING, D. A et al.Journal of crystal growth. 1990, Vol 106, Num 2-3, pp 246-252, issn 0022-0248Article